US6165837A
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US
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Semiconductor integrated memory manufacturing method and device
Assignee: Toshiba Corp
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Filing: 1999-03-26
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Granted: 2000-12-26
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Expires: 2019-03-26
Abstract
Abstract A method of manufacturing a semiconductor integrated memory device including a plurality of a memory cells, and the semiconductor memory device, wherein each memory cell includes a transistor and a capacitor. The capacitor is formed of first and second electrodes and a dielectric layer. The first electrode and the dielectric layer are successively formed on a main surface of a semiconductor substrate by epitaxial growth. A region of the capacitor is removed to expose a region of the main surface of the substrate under the capacitor. A single crystal semiconductor layer is formed on the exposed region of the substrate by epitaxial growth, and the transistor is formed on the single crystal semiconductor layer, thereby to obtain a device having high integration density integration and preferred performance with high yield.
Inventors
- 👤 Takashi Kawakubo
- 👤 Noboru Fukushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:10
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/036; H10B12/05; H10B12/038; H10B12/0385; H10B12/30; H10B12/37; H10B12/373; H10D; H10D86/00; H10D86/201
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
123 words
A method for manufacturing a semiconductor integrated memory device having a plurality of memory cells, comprising steps of: forming a first electrode on a main surface of a semiconductor substrate; forming an epitaxially grown dielectric layer on the main surface of the semiconductor substrate; forming a second electrode on the dielectric layer so as to form a capacitor, the acapacitor comprising the first electrode, the dielectric layer, and the second electrode; removing a region of the capacitor so as to expose the main surface under the region; forming a side wall insulator layer on a side wall of the capacitor; forming an epitaxially grown semiconductor single crystal layer on the exposed main surface; and forming a transistor on the semiconductor single crystal layer.
Claim 2
Independent Claim
123 words
A method for manufacturing a semiconductor integrated memory device having a plurality of memory cells, comprising steps of: forming a first electrode on a main surface of a semiconductor substrate; forming an epitaxially grown dielectric layer on the main surface of the semiconductor substrate; forming a second electrode on the dielectric layer so as to form a capacitor, the acapacitor comprising the first electrode, the dielectric layer, and the second electrode; removing a region of the capacitor so as to expose the main surface under the region; forming a side wall insulator layer on a side wall of the capacitor; forming an epitaxially grown semiconductor single crystal layer on the exposed main surface; and forming a transistor on the semiconductor single crystal layer.
Claim 3
Dependent Claim
19 words
A method as set forth in claim 1, wherein the second electrode is formed by an epitaxial growth step.
Claim 4
Dependent Claim
34 words
A method as set forth in claim 1, further comprising: forming an interlayer insulator layer to cover top surfaces of the capacitor, and followed by forming of the epitaxially grown semiconductor single crystal layer.
Claim 5
Dependent Claim
42 words
A method as set forth in claim 3, wherein the interlayer insulator layer is formed by forming an insulator layer so as to conformably cover the capacitor and selectively leaving the side wall insulator layers on both side walls of the capacitor.
Claim 6
Dependent Claim
23 words
A method as set forth in claim 3, wherein the interlayer insulator layer covering the capacitor insulates memory cells adjacent to each other.
Claim 7
Dependent Claim
29 words
A method as set forth in claim 1, wherein the single crystal semiconductor layer is formed by a selective epitaxial growth process or a solid phase epitaxial growth process.
Claim 8
Dependent Claim
32 words
A method as set forth in claim 1, wherein forming a pattern of the transistor on the semiconductor single crystal layer and forming a pattern of the second electrode are separate performed.
Claim 9
Dependent Claim
24 words
A method as set forth in claim 7, wherein the second electrode is formed by utilizing the pattern of the transistor as a mask.
Claim 10
Dependent Claim
22 words
A method as set forth in claim 1, wherein the memory cell is formed on a planar portion of the main surface.
Claim 11
Dependent Claim
45 words
A method as set forth in claim 1, further comprising: forming a trench in the main surface of the substrate, wherein a crystal face of the trench is {100}, and the first electrode and the dielectric layer are formed by epitaxial growth in the trench.
Claim 12
Dependent Claim
55 words
A method as set forth in claim 1, wherein a crystal face of at least one of the first and second electrodes is selected from the group consisting of a {100} face of a cubic perovskite crystal structure, a {001} face of a tetragonal perovskite structure, and a {001} face of a lacer perovskite structure.
Claim 13
Dependent Claim
49 words
A method as set forth in claim 1, wherein a crystal face of the dielectric layer is selected from the group consisting of a {100} face of a cubic perovskite crystal structure, a {001} face of a tetragonal perovskite structure, and a {001} face of a layer perovskite structure.
Claim 14
Dependent Claim
52 words
A method as set forth in claim 1, wherein at least one of the first and second electrodes are formed of an element selected from the group consisting of a conductive oxide material ABO 3 of perovskite structure, Pt, Au, Pd, Ir, Rh, Re, Ru, an alloy thereof, and an oxide thereof.
Claim 15
Dependent Claim
127 words
A method as set forth in claim 1, wherein the insulator layer is formed of ABO 3 of perovskite crystal structure, where A is an element selected from the group consisting of Ba, Sr, and Ca, and B is an alloy selected from the group consisting of Ti, Zr, Hf, Sn, (Mg 1/3 Nb 2/3 ), (Mg 1/3 Ta 2/3 ), (Zn 1/3 Nb 2/3 ), (Mg 1/2 Te 1/2 ), (Co 1/2 W 1/2 ), (Mg 1/2 W 1/2 ), (Mn 1/2 W 1/2 ), (Sc 1/2 Nb 1/2 ), (Mn 1/2 Nb 1/2 ), (Sc 1/2 Ta 1/2 ), (Fe 1/2 Nb 1/2 ), (Co 1/3 Nb 2/3 ), (Ni 1/3 Nb 2/3 ), (Co 1/3 Ta 2/3 ), and (Ni 1/3 Ta 2/3 ).
Claim 16
Dependent Claim
21 words
A method as set forth in claim 1, wherein the semiconductor substrate and the single crystal layer consist essentially of Si.
Claim 17
Dependent Claim
19 words
A method as set forth in claim 13, wherein the insulator layer comprises ABO 3 of perovskite crystal structure.
Claim 18
Dependent Claim
37 words
A method as set forth in claim 1, wherein one of the first and the second electrodes comprises a SrRuO 3 layer, and said dielectric layer comprises a Ba x Sr 1-x TiO 3 (BSTO) ferroelectric layer.
Claim 19
Dependent Claim
34 words
A method as set forth in claim 1, wherein the substrate comprises a substrate selected from the group consisting of a Si substrate, a SiGe substrate, a compound semiconductor substrate, and an SOI substrate.
Claim 20
Independent Claim
16 words
A method as set forth in claims 1, wherein the dielectric layer comprises a ferroelectric layer.
Claim 21
Dependent Claim
17 words
A method as set forth in claim 1, wherein the device is a Dynamic Random Access Memory.
Claim 22
Dependent Claim
17 words
A method as set forth in claim 1, wherein the device is a Ferroelectric Random Access Memore.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-26 | 2004-06-26 | 2004-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-26 | 2008-06-26 | 2008-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-26 | 2012-06-26 | 2012-12-26 | $7700.00 | Window Closed / Lapsed |