US4755481A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a silicon-on-insulator transistor
Assignee: Intersil Corp
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Filing: 1986-05-15
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Granted: 1988-07-05
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Expires: 2006-05-15
Abstract
Abstract A silicon-on-insulator (SOI) device is fabricated by forming at least one island of semiconductor material on a surface of an insulating material. Silicon is then formed on the areas which surround the at least one island. The silicon is oxidized to form silicon dioxide regions which surround the at least one island.
Inventors
- 👤 Lorenzo Faraone
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:09
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
74 words
A method of forming a semiconductor device comprising the steps of: forming at least one island of semiconductor material on a surface of an insulating material; applying a masking layer to the top of said at least one island; forming intrinsic epitaxial silicon on the areas surrounding said at least one island by selective epitaxial growth; and oxidizing said intrinsic epitaxial silicon to form silicon dioxide regions which surround said at least one island.
Claim 2
Independent Claim
74 words
A method of forming a semiconductor device comprising the steps of: forming at least one island of semiconductor material on a surface of an insulating material; applying a masking layer to the top of said at least one island; forming intrinsic epitaxial silicon on the areas surrounding said at least one island by selective epitaxial growth; and oxidizing said intrinsic epitaxial silicon to form silicon dioxide regions which surround said at least one island.
Claim 3
Dependent Claim
20 words
A method of forming a semiconductor device in accordance with claim 1 wherein said insulating material is a sapphire substrate.
Claim 4
Dependent Claim
44 words
A method of forming a semiconductor device in accordance with claim 2 further comprising the step of forming silicon dioxide on the top and sidewalls of said at least one island before forming the silicon on the areas surrounding said at least one island.
Claim 5
Dependent Claim
32 words
A method of forming a semiconductor device in accordance with claim 1 wherein said insulating material is an island of silicon dioxide which is formed on the surface of a silicon substrate.
Claim 6
Dependent Claim
25 words
A method of forming a semiconductor device in accordance with claim 1 wherein said semiconductor material comprises single crystalline silicon having a first conductivity type.
Claim 7
Dependent Claim
52 words
A method of forming a semiconductor device in accordance with claim 5 further comprising the step of doping the sidewalls of said at least one island with a conductivity modifier of the same type as said first conductivity type before forming the silicon on the areas surrounding said at least one island.
Claim 8
Dependent Claim
18 words
A method of forming a semiconductor device in accordance with claim 1 wherein said mask comprises silicon nitride.
Claim 9
Independent Claim
91 words
A method of forming a semiconductor device comprising the steps of: forming at least one island of single crystalline silicon on the surface of a sapphire substrate; applying an oxidation resistant masking layer to the top of said at least one island; forming intrinsic epitaxial silicon on the areas of the sapphire substrate surrounding said at least one island by selective epitaxial growth; and heating the intrinsic epitaxial silicon formed on the areas of the sapphire substrate surrounding said at least one island in an oxidizing atmosphere to form silicon dioxide.
Claim 10
Independent Claim
91 words
A method of forming a semiconductor device comprising the steps of: forming at least one island of single crystalline silicon on the surface of a sapphire substrate; applying an oxidation resistant masking layer to the top of said at least one island; forming intrinsic epitaxial silicon on the areas of the sapphire substrate surrounding said at least one island by selective epitaxial growth; and heating the intrinsic epitaxial silicon formed on the areas of the sapphire substrate surrounding said at least one island in an oxidizing atmosphere to form silicon dioxide.
Claim 11
Dependent Claim
50 words
A method of forming a semiconductor device in accordance with claim 8 further comprising the step of forming a silicon dioxide layer on the top and sidewalls of said at least one island before forming the silicon on the areas of the sapphire substrate surrounding said at least one island.
Claim 12
Dependent Claim
21 words
A method of forming a semiconductor device in accordance with claim 9 wherein said oxidation resistant masking layer comprises silicon nitride.
Claim 13
Dependent Claim
46 words
A method of forming a semiconductor device in accordance with claim 9 wherein said silicon formed on the areas of the sapphire substrate surrounding said at least one island is grown to a thickness of about half of the thickness of said at least one island.
Claim 14
Dependent Claim
27 words
A method of forming a semiconductor device in accordance with claim 8 further comprising the step of doping the sidewalls of the said at least one island.
Claim 15
Dependent Claim
26 words
A method of forming a semiconductor device in accordance with claim 8 further comprising the step of forming a transistor in said at least one island.
Claim 16
Independent Claim
108 words
A method of forming a semiconductor device comprising the steps of: forming at least one island of insulating material on a surface of a silicon substrate; forming a, layer of monocrystalline silicon on at least a portion of the exposed surface of said at least one island; applying an oxidation resistant masking layer to said layer of monocrystalline silicon; forming intrinsic epitaxial silicon on the areas of said silicon substrate surrounding said at least one island by selective epitaxial growth; and heating the intrinsic epitaxial silicon formed on the areas of the silicon substrate surrounding said at least one island in an oxidizing atmosphere to form silicon dioxide.
Claim 17
Independent Claim
108 words
A method of forming a semiconductor device comprising the steps of: forming at least one island of insulating material on a surface of a silicon substrate; forming a, layer of monocrystalline silicon on at least a portion of the exposed surface of said at least one island; applying an oxidation resistant masking layer to said layer of monocrystalline silicon; forming intrinsic epitaxial silicon on the areas of said silicon substrate surrounding said at least one island by selective epitaxial growth; and heating the intrinsic epitaxial silicon formed on the areas of the silicon substrate surrounding said at least one island in an oxidizing atmosphere to form silicon dioxide.
Claim 18
Dependent Claim
28 words
A method of forming a semiconductor device in accordance with claim 14 wherein said insulating material is selected from the group consisting of silicon nitride and silicon dioxide.
Claim 19
Dependent Claim
66 words
A method of forming a semiconductor device in accordance with claim 14 wherein said silicon formed on the areas of said silicon substrate surrounding said at least one island is grown to a thickness equal to about half of the total thickness of said at least one island and said layer of monocrystalline silicon formed on at least a portion of said at least one island.
Claim 20
Dependent Claim
21 words
A method of forming a semiconductor device in accordance with claim 14 wherein said oxidation resistant masking layer comprises silicon nitride.
Claim 21
Dependent Claim
26 words
A method of forming a semiconductor device in accordance with claim 14 further comprising the step of forming a transistor in said layer of monocrystalline silicon.
References Cited (Backward Citations)
US3511702A
Cited
US3740280A
Cited
US3890632A
Cited
US4174217A
Cited
US3974515A
Cited
US3943542A
Cited
US4016016A
Cited
US4002501A
Cited
US4076573A
Cited
US4183134A
Cited
US4160260A
Cited
US4263709A
Cited
US4323910A
Cited
US4178191A
Cited
US4199773A
Cited
US4199384A
Cited
US4395726A
Cited
US4341569A
Cited
US4368085A
Cited
US4242156A
Cited
US4393578A
Cited
US4252582A
Cited
US4447823A
Cited
US4385937A
Cited
US4393572A
Cited
US4491856A
Cited
US4277884A
Cited
US4356623B1
Cited
US4356623A
Cited
US4533934A
Cited
US4313809A
Cited
JPS57133667A
Cited
US4455738A
Cited
US4523963A
Cited
US4547231A
Cited
US4472459A
Cited
US4557794A
Cited
EP0179719A1
Cited
US4604304A
Cited
US4658495A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-05 | 1992-01-04 | 1992-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-05 | 1996-01-04 | 1996-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-05 | 2000-01-04 | 2000-07-05 | $7700.00 | Window Closed / Lapsed |