US4368085A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOS island edge passivation structure
Assignee: Conexant Systems LLC
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Filing: 1980-07-08
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Granted: 1983-01-11
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Expires: 2000-07-08
Abstract
Abstract A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicone nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to prevent gate oxide breakdown.
Inventors
- 👤 John L. Peel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:32
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6737; H10D30/6739; H10D30/6758; H10D30/6759; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516; H10D64/693; H10D86/00; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
97 words
A silicon-on-sapphire semiconductor structure comprising: a sapphire substrate; a silicon island disposed on said sapphire substrate, having a major surface including an upper first surface and a side second surface separated by an edge; an oxide layer disposed entirely over said major surface of said silicon island; and a silicon nitride layer disposed entirely over said side second surface and in part over said upper first surface, the nitride layer extending over a portion of said upper first surface so that said nitride layer covers the edge between said upper first surface and said side second surface.
Claim 2
Dependent Claim
97 words
A silicon-on-sapphire semiconductor structure comprising: a sapphire substrate; a silicon island disposed on said sapphire substrate, having a major surface including an upper first surface and a side second surface separated by an edge; an oxide layer disposed entirely over said major surface of said silicon island; and a silicon nitride layer disposed entirely over said side second surface and in part over said upper first surface, the nitride layer extending over a portion of said upper first surface so that said nitride layer covers the edge between said upper first surface and said side second surface.
References Cited (Backward Citations)
US3740280A
Cited
FR2254104B1
Cited
FR2280979A1
Cited
US4174217A
Cited
FR2284988B1
Cited
US4057824A
Cited
US4097314A
Cited
US4263709A
Cited
US4199384A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-10 | 1986-07-12 | 1987-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-10 | 1990-07-12 | 1991-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-10 | 1994-07-12 | 1995-01-11 | $7700.00 | Window Closed / Lapsed |