US4658495A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a semiconductor structure
Assignee: RCA Corp
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Filing: 1986-04-28
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Granted: 1987-04-21
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Expires: 2006-04-28
Abstract
Abstract A method for forming a layer of silicon dioxide over a silicon island on an insulating surface wherein the layer on top of the island is thinner than on the sidewalls is disclosed. The silicon island is oxidized and a silicon layer is deposited thereover. A layer of planarizing material is deposited over the silicon layer. The planarizing layer is anisotropically etched until the surface of the silicon layer overlying the island is exposed. The silicon layer is in turn etched until the surface of the oxide layer overlying the island is exposed. The remaining planarizing material is removed and the remaining silicon layer is oxidized. The thickness of the gate oxide layer on top of the island may be controlled by again exposing the island surface and reoxidizing to a predetermined thickness. A conductive polycrystalline silicon electrode is deposited on the oxide-covered island. The disclosed method is particularly useful in the formation of MOSFETs.
Inventors
- 👤 Doris W. Flatley
- 👤 Alfred C. Ipri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:03
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/0323; H10D86/00; H10D86/01; H10D86/03; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/15; Y10S438/00; Y10S438/911; Y10S438/981
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
128 words
A method of forming a silicon dioxide layer on silicon islands on an insulating substrate comprising: (a) providing an insulating substrate having at least one silicon island disposed on a major surface thereof; (b) oxidizing the surface of the silicon island to form a layer of silicon dioxide thereover; (c) depositing a layer of silicon on the oxidized island and the substrate adjacent thereto; (d) depositing a layer of planarizing material over the substrate; (e) etching the planarizing layer for a time sufficient to expose the surface of the silicon layer overlying the island; (f) etching the silicon layer for a time sufficient to expose the layer of silicon dioxide on top of the island; (g) removing any remaining planarizing layer; and (h) oxidizing the remaining silicon layer.
Claim 2
Independent Claim
128 words
A method of forming a silicon dioxide layer on silicon islands on an insulating substrate comprising: (a) providing an insulating substrate having at least one silicon island disposed on a major surface thereof; (b) oxidizing the surface of the silicon island to form a layer of silicon dioxide thereover; (c) depositing a layer of silicon on the oxidized island and the substrate adjacent thereto; (d) depositing a layer of planarizing material over the substrate; (e) etching the planarizing layer for a time sufficient to expose the surface of the silicon layer overlying the island; (f) etching the silicon layer for a time sufficient to expose the layer of silicon dioxide on top of the island; (g) removing any remaining planarizing layer; and (h) oxidizing the remaining silicon layer.
Claim 3
Dependent Claim
23 words
A method in accordance with claim 1, additionally including the step of depositing a conductive polycrystalline silicon electrode on the oxidized silicon layer.
Claim 4
Dependent Claim
86 words
A method in accordance with claim 1, additionally including the steps of depositing a layer of planarizing material over the structure formed in set (h), etching the planarizing layer for a time sufficient to expose the layer of silicon dioxide overlying the island, etching the silicon dioxide layer for a time sufficient to expose the top of the island, removing any remaining planarizing layer, and oxidizing the top of the island for a time sufficient to form a layer of silicon dioxide of predetermined thickness thereon.
Claim 5
Dependent Claim
26 words
A method in accordance with claim 3, additionally including the step of depositing a conductive polycrystalline silicon electrode on said silicon dioxide layer of predetermined thickness.
Claim 6
Dependent Claim
15 words
A method in accordance with claim 1, wherein the insulating substrate is an amorphous material.
Claim 7
Dependent Claim
13 words
A method in accordance with claim 5, wherein the amorphous material is glass.
Claim 8
Dependent Claim
13 words
A method in accordance with claim 5, wherein the silicon island is polycrystalline.
Claim 9
Dependent Claim
13 words
A method in accordance with claim 5, wherein the silicon island is monocrystalline.
Claim 10
Dependent Claim
15 words
A method in accordance with claim 1, wherein the insulating substrate is a crystalline material.
Claim 11
Dependent Claim
22 words
A method in accordance with claim 9, wherein the crystalline material is selected from the group consisting of sapphire, spinel and beryllia.
Claim 12
Dependent Claim
13 words
A method in accordance with claim 10, wherein the crystalline material is sapphire.
Claim 13
Dependent Claim
13 words
A method in accordance with claim 10, wherein the silicon island is monocrystalline.
Claim 14
Dependent Claim
20 words
A method in accordance with claim 1, wherein, in step (c), the silicon layer is deposited in the amorphous state.
Claim 15
Dependent Claim
16 words
A method in accordance with claim 1, wherein the planarizing material is a positive resist material.
Claim 16
Dependent Claim
55 words
A method in accordance with claim 1, additionally including the steps of etching the silicon dioxide layer of the structure formed in step (h) for a time sufficient to expose the top surface of the island and oxidizing the exposed portion of the island to form a layer of silicon dioxide of predetermined thickness thereon.
Claim 17
Dependent Claim
26 words
A method in accordance with claim 15, additionally including the step of depositing a conductive polycrystalline silicon electrode on said silicon dioxide layer of predetermined thickness.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-20 | 1990-10-20 | 1991-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-20 | 1994-10-20 | 1995-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-20 | 1998-10-20 | 1999-04-21 | $7700.00 | Window Closed / Lapsed |