US4447823A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOS p--n Junction device with a thick oxide wiring insulation layer
Assignee: Toshiba Corp
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Filing: 1981-03-05
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Granted: 1984-05-08
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Expires: 2001-03-05
Abstract
Abstract A semiconductor device having silicon-on-sapphire structure in which a pn junction element is formed in a silicon substrate disposed on a sapphire plate. An oxide layer is formed in the surface area of the p-type region which serves to form the pn junction elements.
Inventors
- 👤 Kenji Maeguchi
- 👤 Hiroyuki Tango
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:16
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1912; H10W10/011; H10W10/012; H10W10/13
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
172 words
A semiconductor device comprising: an insulation body; a silicon layer formed on the insulation body; a first semiconductor region of a first conductivity type formed in a part of the silicon layer; a second semiconductor region formed in a part of said silicon layer adjacent to the first semiconductor region and cooperating with the first semiconductor region to form a pn junction element, said second semiconductor region having a second conductivity type opposite to that of the first semiconductor region, and said first semiconductor region having an upper surface lying below the upper surface of said silicon layer; a third semiconductor region of first conductivity type formed in a part of said silicon layer separated from the second semiconductor region and adjacent to the first semiconductor region and having a higher impurity concentration than that of the first semiconductor region; and an insulation region formed at least on said upper surface of the first semiconductor region with the bottom of said insulation region lying below the upper surface of said silicon layer.
Claim 2
Dependent Claim
172 words
A semiconductor device comprising: an insulation body; a silicon layer formed on the insulation body; a first semiconductor region of a first conductivity type formed in a part of the silicon layer; a second semiconductor region formed in a part of said silicon layer adjacent to the first semiconductor region and cooperating with the first semiconductor region to form a pn junction element, said second semiconductor region having a second conductivity type opposite to that of the first semiconductor region, and said first semiconductor region having an upper surface lying below the upper surface of said silicon layer; a third semiconductor region of first conductivity type formed in a part of said silicon layer separated from the second semiconductor region and adjacent to the first semiconductor region and having a higher impurity concentration than that of the first semiconductor region; and an insulation region formed at least on said upper surface of the first semiconductor region with the bottom of said insulation region lying below the upper surface of said silicon layer.
Claim 3
Dependent Claim
74 words
A semiconductor device according to claim 1 further including a fourth semiconductor region of second conductivity type formed in a part of said silicon layer separated from the second semiconductor region and adjacent to the third semiconductor region, a fifth semiconductor region of second conductivity type formed in a part of said silicon layer separated from the fourth semiconductor region, and a gate region insulatively laid over between the fourth and fifth semiconductor regions.
Claim 4
Dependent Claim
21 words
A semiconductor device according to claim 2, wherein the silicon layer is formed in a limited area on said insulation body.
Claim 5
Dependent Claim
27 words
A semiconductor device according to claim 1, 2, or 3 further including an insulating layer which encloses the silicon layer and defines an island area of silicon.
Claim 6
Dependent Claim
195 words
A semiconductor device comprising: an insulation body; a silicon layer formed on the insulation body; a first semiconductor region of a first conductivity type formed in a part of the silicon layer; a second semiconductor region formed in a part of said silicon layer adjacent to the first semiconductor region and cooperating with the first semiconductor region to form a pn junction element, said second semiconductor region having a second conductivity type opposite to that of the first semiconductor region, and said first semiconductor region having an upper surface lying below the upper surface of said silicon layer; a third semiconductor region of second conductivity type formed in a part of said silicon layer separated from the second semiconductor region and adjacent to the first semiconductor region, a fourth semiconductor region of second conductivity type formed in a part of said silicon layer separated from the third semiconductor region, and a gate region insulatively laid over between the third and fourth semiconductor region; and an insulation region formed at least on said upper surface of the first semiconductor region with the bottom of said insulation region lying below the upper surface of said silicon layer.
Claim 7
Dependent Claim
195 words
A semiconductor device comprising: an insulation body; a silicon layer formed on the insulation body; a first semiconductor region of a first conductivity type formed in a part of the silicon layer; a second semiconductor region formed in a part of said silicon layer adjacent to the first semiconductor region and cooperating with the first semiconductor region to form a pn junction element, said second semiconductor region having a second conductivity type opposite to that of the first semiconductor region, and said first semiconductor region having an upper surface lying below the upper surface of said silicon layer; a third semiconductor region of second conductivity type formed in a part of said silicon layer separated from the second semiconductor region and adjacent to the first semiconductor region, a fourth semiconductor region of second conductivity type formed in a part of said silicon layer separated from the third semiconductor region, and a gate region insulatively laid over between the third and fourth semiconductor region; and an insulation region formed at least on said upper surface of the first semiconductor region with the bottom of said insulation region lying below the upper surface of said silicon layer.
Claim 8
Dependent Claim
25 words
A semiconductor device according to claim 5 wherein the insulation region is also formed at least in the surface area of the third semiconductor region.
Claim 9
Dependent Claim
224 words
A semiconductor device comprising: an insulation body; a silicon layer formed on the insulation body; a first semiconductor region of a first conductivity type formed in a part of the silicon layer; a second semiconductor region formed in a part of said silicon layer adjacent to the first semiconductor region and cooperating with the first semiconductor region to form a pn junction element, said second semiconductor region having a second conductivity type opposite to that of the first semiconductor region, and said first semiconductor region having an upper surface lying below the upper surface of said silicon layer; a third semiconductor region of second conductivity type formed in a part of said silicon layer separated from the second semiconductor region and adjacent to the first semiconductor region; a fourth semiconductor region of second conductivity type formed in a part of said silicon layer separated from the second semiconductor region and adjacent to the third semiconductor region, a fifth semiconductor region of second conductivity type formed in a part of said silicon layer separated from the fourth semiconductor region, and a gate region insulatively laid over between the fourth and fifth semiconductor regions; and an insulation region formed at least on said upper surface of the first semiconductor region with the bottom of said insulation region lying below the upper surface of said silicon layer.
Claim 10
Dependent Claim
224 words
A semiconductor device comprising: an insulation body; a silicon layer formed on the insulation body; a first semiconductor region of a first conductivity type formed in a part of the silicon layer; a second semiconductor region formed in a part of said silicon layer adjacent to the first semiconductor region and cooperating with the first semiconductor region to form a pn junction element, said second semiconductor region having a second conductivity type opposite to that of the first semiconductor region, and said first semiconductor region having an upper surface lying below the upper surface of said silicon layer; a third semiconductor region of second conductivity type formed in a part of said silicon layer separated from the second semiconductor region and adjacent to the first semiconductor region; a fourth semiconductor region of second conductivity type formed in a part of said silicon layer separated from the second semiconductor region and adjacent to the third semiconductor region, a fifth semiconductor region of second conductivity type formed in a part of said silicon layer separated from the fourth semiconductor region, and a gate region insulatively laid over between the fourth and fifth semiconductor regions; and an insulation region formed at least on said upper surface of the first semiconductor region with the bottom of said insulation region lying below the upper surface of said silicon layer.
Claim 11
Dependent Claim
17 words
A semiconductor device according to claim 7 further including a conductive layer formed on the insulation region.
Claim 12
Dependent Claim
19 words
A semiconductor device according to claim 7 wherein the first semiconductor region is formed to reach the insulation body.
Claim 13
Dependent Claim
17 words
A semiconductor device according to claim 5 further including a conductive layer formed on the insulation region.
Claim 14
Dependent Claim
19 words
A semiconductor device according to claim 5 wherein the first semiconductor region is formed to reach the insulation body.
Claim 15
Dependent Claim
20 words
A semiconductor device according to claim 1, 2, or 6 further including a conductive layer formed on the insulation region.
Claim 16
Dependent Claim
22 words
A semiconductor device according to claim 1, 2, or 6 wherein the first semiconductor region is formed to reach the insulation body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-08 | 1987-11-07 | 1988-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-08 | 1991-11-07 | 1992-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-08 | 1995-11-07 | 1996-05-08 | $7700.00 | Window Closed / Lapsed |