Abstract A method for forming a layer of monocrystalline diamond cubic material on a mask comprises initially providing a substrate having a monocrystalline surface which is parallel to a {100}-type crystallographic plane. A mask is then formed on the substrate, the mask including at least two apertures and each aperture including an edge which is oriented between 8° and 14° from a particular <001> direction on the surface. The aperture edges are mutually parallel and in mutual opposition and the mask apertures each expose a monocrystalline surface portion of the substrate. The diamond cubic material is then epitaxially grown through the apertures and over the mask so as to form a monocrystalline layer of substantially uniform quality overlying the mask between the edges of the apertures.
A method for forming a layer of monocrystalline diamond cubic material on a mask, comprising: providing a substrate having a monocrystalline surface parallel to a {100}-type crystallographic plane; forming a mask on the substrate, the mask including at least two apertures, each aperture including an edge which is oriented between 8° and 14° from a particular <001> direction on the surface, the edges being mutually parallel and in mutual opposition and the apertures each exposing a monocrystalline surface portion of the substrate; and epitaxially growing diamond cubic material through the apertures and laterally, perpendicular to said aperture edges, so as to form a monocrystalline layer of substantially uniform quality overlying the mask between the edges of the apertures.
Claim 2
Independent Claim
118 words
A method for forming a layer of monocrystalline diamond cubic material on a mask, comprising: providing a substrate having a monocrystalline surface parallel to a {100}-type crystallographic plane; forming a mask on the substrate, the mask including at least two apertures, each aperture including an edge which is oriented between 8° and 14° from a particular <001> direction on the surface, the edges being mutually parallel and in mutual opposition and the apertures each exposing a monocrystalline surface portion of the substrate; and epitaxially growing diamond cubic material through the apertures and laterally, perpendicular to said aperture edges, so as to form a monocrystalline layer of substantially uniform quality overlying the mask between the edges of the apertures.
Claim 3
Dependent Claim
14 words
A method in accordance with claim 1 wherein said diamond cubic material comprises silicon.
Claim 4
Dependent Claim
13 words
A method in accordance with claim 1 wherein said mask comprises silicon dioxide.
Claim 5
Dependent Claim
21 words
A method in accordance with claim 1 wherein the aperture edges are oriented at substantially 12° from said particular <001> direction.