Abstract A semiconductor device includes a region of polycrystalline silicon on a portion of the surface of a body of semiconductor material. A layer of oxidized polycrystalline silicon is also on the semiconductor material body and extends to the polycrystalline silicon region. The surface of the silicon oxide layer is substantially coplanar with the surface of the polycrystalline silicon region so that a metal film conductor can be easily provided over the semiconductor device. The polycrystalline silicon region may be the gate of an MOS transistor or a conductive region of any type of semiconductor device. The semiconductor device is made by forming a polycrystalline silicon layer over the semiconductor material body, forming a mask on a portion of the polycrystalline silicon layer, reducing the thickness of the unmasked portion of the polycrystalline silicon layer and then oxidizing the unmasked portion of the polycrystalline silicon layer to form the oxide layer.
A semiconductor device comprising: a body of semiconductor material having a planar surface thereon and spaced drain and source portions embedded therein at the surface, the drain and source portions spaced one from the other defining a channel portion therebetween; a region of polycrystalline silicon disposed over the channel portion of the semiconductor body; and a layer of oxidized polycrystalline silicon disposed over the drain and source portions of the semiconductor body, the oxidized polycrystalline silicon layer extending up to and contacting the polycrystalline silicon region, with the surface of the oxidized polycrystalline silicon layer being substantially coplanar with the surface of the polycrystalline silicon region.
Claim 2
Dependent Claim
106 words
A semiconductor device comprising: a body of semiconductor material having a planar surface thereon and spaced drain and source portions embedded therein at the surface, the drain and source portions spaced one from the other defining a channel portion therebetween; a region of polycrystalline silicon disposed over the channel portion of the semiconductor body; and a layer of oxidized polycrystalline silicon disposed over the drain and source portions of the semiconductor body, the oxidized polycrystalline silicon layer extending up to and contacting the polycrystalline silicon region, with the surface of the oxidized polycrystalline silicon layer being substantially coplanar with the surface of the polycrystalline silicon region.
Claim 3
Dependent Claim
55 words
A semiconductor device in accordance with claim 1 in which at least a portion of the surface of the semiconductor body is planar and the polycrystalline silicon region and at least portions of the surface of the oxidized polycrystalline silicon layer adjacent the polycrystalline silicon region are over the planar surface of the semiconductor body.
Claim 4
Dependent Claim
60 words
A semiconductor device in accordance with claim 2 including a layer of silicon oxide between the polycrystalline silicon region and the surface of the semiconductor body, and wherein the semiconductor body is of one conductivity type in the region directly under the polycrystalline silicon region and is of the opposite conductivity type at each side of the polycrystalline silicon region.