Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
228 words
A semiconductor structure comprising a monocrystalline semiconductor substrate of one conductivity type, the substrate having its <100> crystallographic planes at one face thereof, an epitaxial layer of the opposite conductivity type overlying said one face of the substrate, a V-groove extending through the epitaxial layer and having its apex in the substrate, the V-groove dividing the epitaxial layer into at least two isolated parts, an electrically insulative thin film coating the surfaces of the V-groove, electrically conductive polycrystalline semi-conductor material filling the V-groove, a first diffusion region of said one conductivity type extending into the epitaxial layer, a second diffusion region of said opposite conductivity type overlying a portion of said first region and forming a p-n junction therewith, a third diffusion region of said opposite conductivity type extending into the epitaxial layer, said third region being disposed on a part of said epitaxial layer that is isolated by the V-groove from the part of the epitaxial layer on which said first and second regions are situated, means on the surface of the semiconductor structure providing electrical connections to each of said diffusion regions and to the polycrystalline material in the V-groove, and means for biasing the polycrystalline semiconductor material in the V-groove in a polarity which induces a conductive channel under the V-groove that enables the flow of electric current between isolated parts of the epitaxial layer.
Claim 2
Dependent Claim
228 words
A semiconductor structure comprising a monocrystalline semiconductor substrate of one conductivity type, the substrate having its <100> crystallographic planes at one face thereof, an epitaxial layer of the opposite conductivity type overlying said one face of the substrate, a V-groove extending through the epitaxial layer and having its apex in the substrate, the V-groove dividing the epitaxial layer into at least two isolated parts, an electrically insulative thin film coating the surfaces of the V-groove, electrically conductive polycrystalline semi-conductor material filling the V-groove, a first diffusion region of said one conductivity type extending into the epitaxial layer, a second diffusion region of said opposite conductivity type overlying a portion of said first region and forming a p-n junction therewith, a third diffusion region of said opposite conductivity type extending into the epitaxial layer, said third region being disposed on a part of said epitaxial layer that is isolated by the V-groove from the part of the epitaxial layer on which said first and second regions are situated, means on the surface of the semiconductor structure providing electrical connections to each of said diffusion regions and to the polycrystalline material in the V-groove, and means for biasing the polycrystalline semiconductor material in the V-groove in a polarity which induces a conductive channel under the V-groove that enables the flow of electric current between isolated parts of the epitaxial layer.
Claim 3
Dependent Claim
51 words
The semiconductor structure according to claim 1, wherein the monocrystalline semiconductor substrate has in it a buried layer of said opposite conductivity type adjacent to said epitaxial layer, and the semiconductor material of the substrate in the immediate vicinity of the apex of the V-groove being of said one conductivity type.
Claim 4
Dependent Claim
36 words
The semiconductor structure according to claim 1, wherein the surface of the semiconductor structure is planar and is covered by an electrically insulative layer having windows therein permitting electrical connections to each of said diffusion regions.