US3936859A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device including a conductor surrounded by an insulator
Assignee: RCA Corp
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Filing: 1975-04-22
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Granted: 1976-02-03
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Expires: 1995-04-22
Abstract
Abstract A silicon-gate insulated gate field effect transistor device has a thick field oxide in contiguous surrounding relation to its gate electrode and with a surface coplanar with or slightly higher than the surface of the gate electrode, thus facilitating crossovers and contacts to the gate electrode. The method of making this device includes forming a self-aligned silicon gate structure on a silicon wafer, masking the gate structure against the diffusion of oxygen, and thereafter oxidizing the silicon wafer to grow a thick silicon dioxide layer in surrounding relation to the silicon gate structure.
Inventors
- 👤 Andrew Gordon Francis Dingwall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:15
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/043; Y10S148/053; Y10S148/103; Y10S148/106; Y10S148/122; Y10S148/141
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
224 words
An insulated gate field effect semiconductor device comprising a body of silicon having a first surface, a mesa projecting from said first surface, and a second surface on said mesa generally parallel to said first surface, regions of one type conductivity in said mesa adjacent to respective opposite sides of said mesa, a zone of said mesa between said regions being of conductivity type opposite to that of said regions, a layer of insulating material on said second surface of said body of silicon, a layer of conductive material adjacent to said layer of insulating material and having a planar surface substantially parallel to the second surface of said body of silicon, and a single-layered homogeneous body of insulating material on said first surface of said body of silicon and in contiguous surrounding relation to said mesa, said insulating layer, and said conductive layer, and having a surface spaced from and substantially parallel to said first surface of said body of silicon, said planar surface of said conductive layer being everywhere the same distance from or closer to said first surface of said body of silicon than the surface of said body of insulating material is to said first surface of said body of silicon when these distances are measured in a direction substantially normal to said first surface of said body of silicon.
Claim 2
Dependent Claim
224 words
An insulated gate field effect semiconductor device comprising a body of silicon having a first surface, a mesa projecting from said first surface, and a second surface on said mesa generally parallel to said first surface, regions of one type conductivity in said mesa adjacent to respective opposite sides of said mesa, a zone of said mesa between said regions being of conductivity type opposite to that of said regions, a layer of insulating material on said second surface of said body of silicon, a layer of conductive material adjacent to said layer of insulating material and having a planar surface substantially parallel to the second surface of said body of silicon, and a single-layered homogeneous body of insulating material on said first surface of said body of silicon and in contiguous surrounding relation to said mesa, said insulating layer, and said conductive layer, and having a surface spaced from and substantially parallel to said first surface of said body of silicon, said planar surface of said conductive layer being everywhere the same distance from or closer to said first surface of said body of silicon than the surface of said body of insulating material is to said first surface of said body of silicon when these distances are measured in a direction substantially normal to said first surface of said body of silicon.
Claim 3
Dependent Claim
15 words
A semiconductor device as defined in claim 1 wherein said conductive layer is polycrystalline silicon.
Claim 4
Dependent Claim
53 words
A semiconductor device as defined in claim 1 further comprising a second layer of insulating material on said surface of said conductive layer, a surface of said second layer of insulating material being substantially parallel to and spaced no further than about 1,000 A from said surface of said body of insulating material.
Claim 5
Dependent Claim
31 words
A semiconductor device as defined in claim 3 further comprising a layer of conductive material extending continuously adjacent to said body of insulating material and said second layer of insulating material.
Claim 6
Dependent Claim
39 words
A semiconductor device as defined in claim 3 further comprising means defining an opening in said second layer of insulating material, and a continuous conductor layer extending adjacent to said body of insulating material and contacting said conductor layer.
Claim 7
Dependent Claim
194 words
A semiconductor device comprising a body of semiconductive material having a surface, a semiconductor element including a layer of conductive material on said body, shaped to serve as an electrode of said element, said layer having a planar surface which is generally parallel to said surface of said body and which faces away from said body, said layer of conductive material being contiguously surrounded by a layer of a first insulating material on said body, said layer of insulating material having a surface which is generally parallel to said surface of said body and which faces away from said body and is spaced from said surface of said body by a distance at least as great as the distance by which said planar surface of said layer of conductive material is spaced from said surface of said body, a layer of a second insulating material which is soluble in a solvent which will not attack said first insulating material on a portion only of said layer of conductive material, and a conductor overlying and making contact to said layer of conductive material and being partially insulated therefrom by said layer of second insulating material.
Claim 8
Dependent Claim
194 words
A semiconductor device comprising a body of semiconductive material having a surface, a semiconductor element including a layer of conductive material on said body, shaped to serve as an electrode of said element, said layer having a planar surface which is generally parallel to said surface of said body and which faces away from said body, said layer of conductive material being contiguously surrounded by a layer of a first insulating material on said body, said layer of insulating material having a surface which is generally parallel to said surface of said body and which faces away from said body and is spaced from said surface of said body by a distance at least as great as the distance by which said planar surface of said layer of conductive material is spaced from said surface of said body, a layer of a second insulating material which is soluble in a solvent which will not attack said first insulating material on a portion only of said layer of conductive material, and a conductor overlying and making contact to said layer of conductive material and being partially insulated therefrom by said layer of second insulating material.
References Cited (Backward Citations)
US3761327A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-02-02 | 1979-08-04 | 1980-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-02-02 | 1983-08-04 | 1984-02-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-02-02 | 1987-08-04 | 1988-02-03 | $7700.00 | Window Closed / Lapsed |