US4547231A
Expired / Lapsed
US
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Method of manufacturing semiconductor device utilizing selective epitaxial growth under reduced pressure
Assignee: Mitsubishi Electric Corp
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Filing: 1984-06-26
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Granted: 1985-10-15
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Expires: 2004-06-26
Abstract
Abstract Semiconductor layers are selectively epitaxially grown in portions having an insulating film removed which is formed on a substrate by selective epitaxial growth under reduced pressure. With respect to a circumferential region outwardly of the removed portions in which the semiconductor elements are to be provided, there are formed one or more removed portions (dummy portions) in which no semiconductor element is provided, thereby making arrangement of the removed portions as even as possible with respect to the entire surface of the insulating film, to overcome position dependency in flatness of the semiconductor layers to be obtained. The semiconductor layers grown in the dummy portions may be left not to have semiconductor elements formed therein.
Inventors
- 👤 Shiro Hine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:35
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/05
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
120 words
A method of manufacturing a semiconductor device including a plurality of semiconductor elements separated from each other by an insulating film, said method comprising the steps of: forming an insulating film on a substrate; selectively defining removed portions with respect to said insulating film, said removed portions comprising first portions in which semiconductor elements are to be provided and second portions in which no semiconductor element is to be provided, said portions being arranged substantially uniformly along said substrate; and locating said second portions circumferentially outwardly of said first portions; and growing semiconductor layers in said removed portions by selective epitaxial growth under reduced pressure, selecting only elements formed in said first portions for use as semiconductors in a circuit.
Claim 2
Independent Claim
120 words
A method of manufacturing a semiconductor device including a plurality of semiconductor elements separated from each other by an insulating film, said method comprising the steps of: forming an insulating film on a substrate; selectively defining removed portions with respect to said insulating film, said removed portions comprising first portions in which semiconductor elements are to be provided and second portions in which no semiconductor element is to be provided, said portions being arranged substantially uniformly along said substrate; and locating said second portions circumferentially outwardly of said first portions; and growing semiconductor layers in said removed portions by selective epitaxial growth under reduced pressure, selecting only elements formed in said first portions for use as semiconductors in a circuit.
Claim 3
Independent Claim
118 words
A method of manufacturing a semiconductor device including a plurality of semiconductor elements separated from each other by an insulating film, said method comprising the steps of: forming an insulating film on a substrate; selectively defining removed portions with respect to said insulating film, said removed portions comprising first portions in which semiconductor elements are to be provided and second portions in which no semiconductor element is to be provided, said portions being arranged substantially uniformly along said substrate; and locating said second portions circumferentially outwardly of said first portions; and growing semiconductor layers in said removed portions by selective epitaxial growth under reduced pressure, selecting only semiconductors formed in said first portions for connection to wiring layers.
Claim 4
Independent Claim
118 words
A method of manufacturing a semiconductor device including a plurality of semiconductor elements separated from each other by an insulating film, said method comprising the steps of: forming an insulating film on a substrate; selectively defining removed portions with respect to said insulating film, said removed portions comprising first portions in which semiconductor elements are to be provided and second portions in which no semiconductor element is to be provided, said portions being arranged substantially uniformly along said substrate; and locating said second portions circumferentially outwardly of said first portions; and growing semiconductor layers in said removed portions by selective epitaxial growth under reduced pressure, selecting only semiconductors formed in said first portions for connection to wiring layers.
Claim 5
Dependent Claim
25 words
A method of manufacturing a semiconductor device in accordance with claim 1, wherein said epitaxial growth is achieved under reduced pressure of below 100 Torr.
Claim 6
Dependent Claim
25 words
A method of manufacturing a semiconductor device in accordance with claim 2, wherein said epitaxial growth is achieved under reduced pressure of below 100 Torr.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-14 | 1989-04-15 | 1989-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-14 | 1993-04-15 | 1993-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-14 | 1997-04-15 | 1997-10-15 | $7700.00 | Window Closed / Lapsed |