US3206339A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites
Assignee: Lanteris Space LLC
•
Filing: 1963-09-30
•
Granted: 1965-09-14
•
Expires: 1983-09-30
Abstract
No abstract record available.
Inventors
- 👤 Clarence G Thornton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:37
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/043; Y10S148/049; Y10S148/115
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
153 words
THE METHOD OF FABRICATING A GEOMETRICALLY DEFINED EPITAXIALLY-GROWN REGION WHICH COMPRISES, FORMING ON A SINGLE-CRYSTALLINE SURFACE OF A BODY A NARROW, ADHERENT BAND OF A MASKING OXIDE SO AS TO DEFINE THE PERIPHERY OF AN AREA UPON WHICH SAID LAYER IS TO BE FORMED, EXPOSING SAID SURFACE OF SAID BODY AND SAID NARROW BAND TO A GSEOUS STREAM INCLUDING A REACTANT GAS OF A COMPOSITION INCLUDING AT LEAST THE MATERIAL TO BE EPITAXIALLY-GROWN OVER THE SINGLE-CRYSTALLINE SURFACE, AND MAINTAINING SAID SINGLE-CRYSTALLINE SURFACE AT AN ELEVATED TEMPERATURE SUFFICIENT TO CAUSE EPITAXIAL GROWTH OF SAID MATERIAL TO OCCUR AT SAID SINGLE-CRYSTALLINE SURFACE, SAID ELEVATED TEMPERATURE BEING BELOW THAT TEMPERATURE WHICH WOLD RESULT IN THE DEPOSITION OF SAID MATERIAL GENERALLY OVER THE SURFACE OF SAID MASKING OXIDE, SAID WIDTH OF SAID BAND OF MASKING OXIDE BEING LESS THAN THE WIDTH NECESSARY TO SUPPORT CRYSTALLITE GROWTH OF SAID MATERIAL ON SAID MASKING OXIDE AT SAID ELEVATED TEMPERATURE.
Claim 2
Independent Claim
153 words
THE METHOD OF FABRICATING A GEOMETRICALLY DEFINED EPITAXIALLY-GROWN REGION WHICH COMPRISES, FORMING ON A SINGLE-CRYSTALLINE SURFACE OF A BODY A NARROW, ADHERENT BAND OF A MASKING OXIDE SO AS TO DEFINE THE PERIPHERY OF AN AREA UPON WHICH SAID LAYER IS TO BE FORMED, EXPOSING SAID SURFACE OF SAID BODY AND SAID NARROW BAND TO A GSEOUS STREAM INCLUDING A REACTANT GAS OF A COMPOSITION INCLUDING AT LEAST THE MATERIAL TO BE EPITAXIALLY-GROWN OVER THE SINGLE-CRYSTALLINE SURFACE, AND MAINTAINING SAID SINGLE-CRYSTALLINE SURFACE AT AN ELEVATED TEMPERATURE SUFFICIENT TO CAUSE EPITAXIAL GROWTH OF SAID MATERIAL TO OCCUR AT SAID SINGLE-CRYSTALLINE SURFACE, SAID ELEVATED TEMPERATURE BEING BELOW THAT TEMPERATURE WHICH WOLD RESULT IN THE DEPOSITION OF SAID MATERIAL GENERALLY OVER THE SURFACE OF SAID MASKING OXIDE, SAID WIDTH OF SAID BAND OF MASKING OXIDE BEING LESS THAN THE WIDTH NECESSARY TO SUPPORT CRYSTALLITE GROWTH OF SAID MATERIAL ON SAID MASKING OXIDE AT SAID ELEVATED TEMPERATURE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-09-13 | 1969-03-15 | 1969-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-09-13 | 1973-03-15 | 1973-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-09-13 | 1977-03-15 | 1977-09-14 | $7700.00 | Window Closed / Lapsed |