US5266514A
Expired / Lapsed
US
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Method for producing a roughened surface capacitor
Assignee: Industrial Technology Research Institute
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Filing: 1992-12-21
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Granted: 1993-11-30
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Expires: 2012-12-21
Abstract
Abstract A new method to produce a microminiturized capacitor having a roughened surface electrode is achieved. The method involves depositing a first polycrystalline or amorphous silicon layer over a suitable insulating base. The silicon layer is either in situ heavily, uniformly doped or deposited undoped and thereafter heavily doped by ion implantation followed by heating. The structure is annealed at above about 875 DEG C. to render any amorphous silicon polycrystalline and to adjust the crystal grain size of the layer. The polysilicon surface is no subjected to a solution of phosphoric acid at a temperature of above about 140 DEG C. to partially etch the surface and cause the uniformly roughened surface. A capacitor dielectric layer is deposited thereover. The capacitor structure is completed by depositing a second thin polycrystalline silicon layer over the capacitor dielectric layer.
Inventors
- 👤 Hsiao-Chin Tuan
- 👤 Hsiang-Ming J. Chou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:41
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
157 words
A method to produce a roughened surface capacitor fabricated on a monocrystalline semiconductor substrate comprising: depositing a first silicon layer to form a first capacitor plate over a base insulating layer and a contact opening exposing said substrate; heavily doping said first silicon layer with an conductivity imparting impurity to a concentration greater than about 1 E 19 atoms/cm 3 ; heating said first silicon layer to assure uniform distribution of said impurity, optimum grain size of said silicon which is polycrystalline after said heating; subjecting the exposed surfaces of said first polycrystalline silicon layer to etching by phosphoric acid solution at a temperature above about 140° C. to thereby produce a roughened surface on said first silicon layer; depositing a insulating layer to form a capacitor dielectric layer over the surface of the roughened layer; and depositing a second polycrystalline silicon layer over said insulating layer to form the second capacitor plate and complete said capacitor.
Claim 2
Independent Claim
157 words
A method to produce a roughened surface capacitor fabricated on a monocrystalline semiconductor substrate comprising: depositing a first silicon layer to form a first capacitor plate over a base insulating layer and a contact opening exposing said substrate; heavily doping said first silicon layer with an conductivity imparting impurity to a concentration greater than about 1 E 19 atoms/cm 3 ; heating said first silicon layer to assure uniform distribution of said impurity, optimum grain size of said silicon which is polycrystalline after said heating; subjecting the exposed surfaces of said first polycrystalline silicon layer to etching by phosphoric acid solution at a temperature above about 140° C. to thereby produce a roughened surface on said first silicon layer; depositing a insulating layer to form a capacitor dielectric layer over the surface of the roughened layer; and depositing a second polycrystalline silicon layer over said insulating layer to form the second capacitor plate and complete said capacitor.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein said first silicon layer is in situ doped with a phosphorus impurity in a concentration of between about 1 E 19 to 1 E 21 atoms/cm. 3 .
Claim 4
Dependent Claim
39 words
The method of claim 1 wherein said first silicon layer is deposited undoped and then doped by ion implantation with a phosphorus impurity in a concentration of between about 1 E 19 to 1 E 21 atoms/cm. 3 .
Claim 5
Dependent Claim
39 words
The method of claim 1 wherein said first silicon layer is deposited undoped and then doped by ion implantation with a arsenic impurity in a concentration of between about 1 E 19 to 1 E 21 atoms/cm. 3 .
Claim 6
Dependent Claim
39 words
The method of claim 1 wherein said first silicon layer is deposited undoped and then doped by ion implantation with a boron impurity in a concentration of between about 1 E 19 to 1 E 21 atoms/cm. 3 .
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein said first silicon layer is deposited as amorphous silicon and is transformed into polycrystalline silicon during said heating.
Claim 8
Dependent Claim
29 words
The method of claim 1 wherein said first silicon layer is deposited as polycrystalline silicon and is transformed into a more uniform and optimum grain size during said heating.
Claim 9
Dependent Claim
41 words
The method of claim 1 wherein said heating is by furnace heating and is at a temperature of greater than about 800° C. for more than about 25 minutes to optimize the grain size to between about 0.3 to 1.0 micrometers.
Claim 10
Dependent Claim
45 words
The method of claim 1 wherein said first silicon layer is between about 2000 to 5000 Angstroms in thickness as deposited and said phosphoric acid etching removes between about 500 to 800 Angstroms of said first silicon layer during the process of roughening its surface.
Claim 11
Dependent Claim
22 words
The method of claim 9 wherein said phosphoric acid etching is performed under a temperature of between about 140° to 180° C.
Claim 12
Dependent Claim
24 words
The method of claim 10 wherein said phosphoric acid solution has a concentration of phosphoric acid in water of between about 85 to 87%.
Claim 13
Independent Claim
192 words
A method to produce a MOS FET DRAM with a roughened surface capacitor fabricated on a monocrystalline semiconductor substrate comprising: depositing a first silicon layer to form a first capacitor plate over a base insulating layer and a contact opening exposing said substrate with one source/drain element of said MOS FET therein; heavily doping said first polycrystalline silicon layer with an conductivity imparting impurity to a concentration greater than about 1 E 19 atoms/cm. 3 ; heating said first silicon layer to a temperature of greater than about 800° C. to assure uniform distribution of said impurity, optimum grain size of said silicon which is polycrystalline after said heating; subjecting the exposed surfaces of said first polycrystalline silicon layer to etching by phosphoric acid solution at a temperature above about 140° C. to thereby produce a roughened surface on said first silicon layer; depositing a insulating layer to form a capacitor dielectric layer over the surface of the roughened layer; depositing a second polycrystalline silicon layer over said insulating layer to form the second capacitor plate and complete said capacitor; and electrically contacting the other source/drain element of said MOS FET therein.
Claim 14
Independent Claim
192 words
A method to produce a MOS FET DRAM with a roughened surface capacitor fabricated on a monocrystalline semiconductor substrate comprising: depositing a first silicon layer to form a first capacitor plate over a base insulating layer and a contact opening exposing said substrate with one source/drain element of said MOS FET therein; heavily doping said first polycrystalline silicon layer with an conductivity imparting impurity to a concentration greater than about 1 E 19 atoms/cm. 3 ; heating said first silicon layer to a temperature of greater than about 800° C. to assure uniform distribution of said impurity, optimum grain size of said silicon which is polycrystalline after said heating; subjecting the exposed surfaces of said first polycrystalline silicon layer to etching by phosphoric acid solution at a temperature above about 140° C. to thereby produce a roughened surface on said first silicon layer; depositing a insulating layer to form a capacitor dielectric layer over the surface of the roughened layer; depositing a second polycrystalline silicon layer over said insulating layer to form the second capacitor plate and complete said capacitor; and electrically contacting the other source/drain element of said MOS FET therein.
Claim 15
Dependent Claim
40 words
The method of claim 12 wherein said heating is by furnace heating and is at a temperature of greater than about 850° C. for more than about 25 minutes to optimize the grain size to between 0.3 to 1.0 micrometers.
Claim 16
Dependent Claim
45 words
The method of claim 12 wherein said first silicon layer is between about 2000 to 5000 Angstroms in thickness as deposited and said phosphoric acid etching removes between about 500 to 800 Angstroms of said first silicon layer during the process of roughening its surface.
Claim 17
Dependent Claim
22 words
The method of claim 14 wherein said phosphoric acid etching is performed under a temperature of between about 140° to 180° C.
Claim 18
Dependent Claim
24 words
The method of claim 15 wherein said phosphoric acid solution has a concentration of phosphoric acid in water of between about 85 to 86%.
Claim 19
Dependent Claim
34 words
The method of claim 12 wherein said first silicon layer is in situ doped with a phosphorus impurity in a concentration of between about 1 E 19 to 1 E 21 atoms/cm. 3 .
Claim 20
Dependent Claim
39 words
The method of claim 12 wherein said first silicon layer is deposited undoped and then doped by ion implantation with a phosphorus impurity in a concentration of between about 1 E 19 to 1 E 21 atoms/cm. 3 .
Claim 21
Dependent Claim
39 words
The method of claim 12 wherein said first silicon layer is deposited undoped and then doped by ion implantation with a arsenic impurity in a concentration of between about 1 E 19 to 1 E 21 atoms/cm. 3 .
Claim 22
Dependent Claim
39 words
The method of claim 12 wherein said first silicon layer is deposited undoped and then doped by ion implantation with a boron impurity in a concentration of between about 1 E 19 to 1 E 21 atoms/cm. 3 .
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