US5773152A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOI substrate having a high heavy metal gettering effect for semiconductor device
Assignee: NEC Electronics Corp
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Filing: 1995-10-13
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Granted: 1998-06-30
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Expires: 2015-10-13
Abstract
Abstract An SOI substrate comprises a buried silicon oxide layer formed directly under an active silicon layer, and a layer containing phosphorus therein formed under the buried silicon oxide layer. The layer containing phosphorus therein acts as the getter layer, so that an effective gettering of heavy metals can be obtained in a wide temperature range from a low temperature region to a high temperature region. In addition, since the silicon oxide layer exists between the active layer and the getter layer, the diffusion of the phosphorus into the active layer is effectively prevented, and therefore, the phosphorus scarely diffuses to the active layer, so that the device manufactured is subjected to almost no adverse influence of the diffusion of the phosphorus.
Inventors
- 👤 Kensuke Okonogi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:31
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/03; H10P36/07; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6758; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1918; H10P90/192; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
39 words
A silicon-on-insulator substrate comprising an active silicon layer, a buried silicon oxide layer formed directly under said active silicon layer, and an impurity layer containing a high concentration of impurity therein and formed under said buried silicon oxide layer.
Claim 2
Dependent Claim
39 words
A silicon-on-insulator substrate comprising an active silicon layer, a buried silicon oxide layer formed directly under said active silicon layer, and an impurity layer containing a high concentration of impurity therein and formed under said buried silicon oxide layer.
Claim 3
Dependent Claim
24 words
A silicon-on-insulator substrate claimed in claim 1 wherein said impurity layer is formed of a silicon layer containing a high concentration of impurity therein.
Claim 4
Dependent Claim
23 words
A silicon-on-insulator substrate claimed in claim 2 further including a silicon substrate layer between said buried silicon oxide layer and said impurity layer.
Claim 5
Dependent Claim
18 words
A silicon-on-insulator substrate claimed in claim 2 further including a silicon substrate layer formed under said impurity layer.
Claim 6
Dependent Claim
24 words
A silicon-on-insulator substrate claimed in claim 1 wherein said impurity layer is formed of a polysilicon layer containing a high concentration of impurity therein.
Claim 7
Dependent Claim
23 words
A silicon-in-insulator substrate claimed in claim 5 further including a silicon substrate layer between said buried silicon oxide layer and said impurity layer.
Claim 8
Dependent Claim
18 words
A silicon-on-insulator substrate claimed in claim 5 further including a silicon substrate layer formed under said impurity layer.
Claim 9
Dependent Claim
25 words
A silicon-on-insulator substrate claimed in claim 1 wherein said impurity layer is formed of a silicon oxide layer containing a high concentration of impurity therein.
Claim 10
Dependent Claim
18 words
A silicon-on-insulator substrate claimed in claim 8 further including a silicon substrate layer formed under said impurity layer.
Claim 11
Dependent Claim
25 words
A silicon-on-insulator substrate claimed in claim 1 wherein said impurity layer is formed of an N-type silicon substrate containing a high concentration of impurity therein.
Claim 12
Dependent Claim
70 words
A silicon-on-insulator substrate claimed in claim 1 wherein said impurity layer has a plurality of recesses formed on an upper surface thereof, and said silicon oxide layer is formed to cover said upper surface of said impurity layer including said plurality of recesses, and wherein said active silicon layer is divided into a plurality of active regions each located in and partitioned by one of said plurality of island-like recesses.
Claim 13
Dependent Claim
27 words
A silicon-on-insulator substrate claimed in claim 1 wherein said impurity contained in said impurity layer is one selected from the group consisting of phosphorus, boron and arsenic.
References Cited (Backward Citations)
US4916504A
Cited
US4754314A
Cited
JPH0237771A
Cited
US5063113A
Cited
JPH02237121A
Cited
JPH04199632A
Cited
JPH06163862A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-29 | 2001-12-29 | 2002-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-29 | 2005-12-29 | 2006-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-29 | 2009-12-29 | 2010-06-30 | $7700.00 | Window Closed / Lapsed |