US5063113A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Substrate having semiconductor-on-insulator structure with gettering sites and production method thereof
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1989-07-21
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Granted: 1991-11-05
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Expires: 2009-07-21
Abstract
Abstract A substrate has a semiconductor-on-insulator structure. The substrate has a base substrate, an insulator layer provided on the base substrate, an active substrate provided on the insulator layer and having gettering sites, and an active layer provided on the active substrate and made of a semiconductor. The gettering sites under the active layer eliminate crystal defects and impurities generated in the active layer during the semiconductor device production in which elements are formed in the active layer.
Inventors
- 👤 Kunihiko Wada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:44
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10D62/85; H10D62/854; H10P; H10P36/00; H10P36/03; H10P36/07; H10P36/20; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1918; H10P95/00; H10P95/40; H10P95/408; Y; Y10; Y10S; Y10S428/00; Y10S428/901
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
62 words
A substrate having a semiconductor-on-insulator structure comprising: a base substrate; an insulator layer provided on said base substrate; an active substrate provided on said insulator layer, said active substrate made of a single crystal semiconductor having gettering sites therein; and an active layer provided on said active substrate, said active layer made of a single crystal semiconductor substantially free of gettering sites.
Claim 2
Dependent Claim
62 words
A substrate having a semiconductor-on-insulator structure comprising: a base substrate; an insulator layer provided on said base substrate; an active substrate provided on said insulator layer, said active substrate made of a single crystal semiconductor having gettering sites therein; and an active layer provided on said active substrate, said active layer made of a single crystal semiconductor substantially free of gettering sites.
Claim 3
Dependent Claim
29 words
The substrate as claimed in claim 1 wherein said base substrate is made of a material selected from a group consisting of silicon, polysilicon, silicon carbide, metal, and insulator.
Claim 4
Dependent Claim
28 words
The substrate as claimed in claim 1 wherein said insulator layer is made of a material selected from a group consisting of silicon dioxide, glass and phosphosilicate glass.
Claim 5
Dependent Claim
26 words
The substrate as claimed in claim 1 wherein said active substrate is made of a material selected from a group consisting of silicon and gallium arsenide.
Claim 6
Dependent Claim
26 words
The substrate as claimed in claim 1 wherein said active layer is made of a material selected from a group consisting of silicon and gallium arsenide.
Claim 7
Dependent Claim
31 words
The substrate as claimed in claim 1 wherein said insulator layer is made of silicon dioxide, said active substrate is made of silicon, and said active layer is made of silicon.
Claim 8
Dependent Claim
19 words
The substrate as claimed in claim 1 which further comprises metal oxide semiconductor elements formed in said active layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-04 | 1995-05-06 | 1995-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-04 | 1999-05-06 | 1999-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-04 | 2003-05-06 | 2003-11-05 | $7700.00 | Window Closed / Lapsed |