Semiconductor substrate

Abstract

Abstract PURPOSE:To form various semiconductor elements having excellent crystallizability and superior characteristics in one semiconductor wafer by forming a gettering region having a gettering function to the adhesive surfaces of at least one pair of semiconductor wafers or the other semiconductor wafer. CONSTITUTION:At least one pair of semiconductor wafers 1, 2 are fast stuck directly, and heated, thus joining both wafers 1, 2 without interposing adhesives at all. One first wafer 1 is provided with a gettering function or sink marks are generated in the adhesive surfaces of both wafers 1, 2. Accordingly, a heavy metal and a defect are gettered extending over the overall thickness of the second wafer 2 or extending over necessary thickness (d) from the adhesive surface with at least the first wafer, and the second wafer 2 is used as a forming region for semiconductor elements, a semiconductor operating region, thus manufacturing a semiconductor device having excellent characteristics.

Inventors

• 👤 Nobuyuki Izawa
• 👤 伊沢　伸幸
• 👤 Hiroshi Sato
• 👤 弘 佐藤
• 👤 Toshihiko Suzuki
• 👤 利彦 鈴木
• 👤 Yasaburo Kato
• 👤 加藤　弥三郎

Bibliographic Details