US5989623A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dual damascene metallization
Assignee: Applied Materials Inc
•
Filing: 1997-08-19
•
Granted: 1999-11-23
•
Expires: 2017-08-19
Abstract
Abstract The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates a barrier layer deposited on all exposed surface of a dielectric layer which contains a dual damascene via and wire definition. A conductive metal is deposited on the barrier layer using two or more deposition methods to fill the via and wire definition prior to planarization. The invention provides the advantages of having copper wires with lower resistivity (greater conductivity) and greater electromigration resistance than aluminum, a barrier layer between the copper wire and the surrounding dielectric material, void-free, sub-half micron selective CVD Al via plugs, and a reduced number of process steps to achieve such integration.
Inventors
- 👤 Liang-Yuh Chen
- 👤 Rong Tao
- 👤 Ted Guo
- 👤 Roderick Craig Mosely
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/042; H10W20/045; H10W20/052; H10W20/0523; H10W20/056; H10W20/071; H10W20/074; H10W20/076; H10W20/081; H10W20/084
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
74 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) depositing a conductive material on the barrier layer, annealing the conductive material, and depositing the conductive material on the annealed conductive material to fill the damascene via and wire definition; and c) planarizing the conductive material and the barrier layer.
Claim 2
Independent Claim
74 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) depositing a conductive material on the barrier layer, annealing the conductive material, and depositing the conductive material on the annealed conductive material to fill the damascene via and wire definition; and c) planarizing the conductive material and the barrier layer.
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein the conductive material comprises copper or doped copper.
Claim 4
Dependent Claim
25 words
The method of claim 1, wherein the conductive material is selected from the group consisting of copper, aluminum, doped copper, doped aluminum, and mixtures thereof.
Claim 5
Dependent Claim
22 words
The method of claim 1, wherein the conductive material is annealed after the conductive material is deposited on the annealed conductive material.
Claim 6
Dependent Claim
16 words
The method of claim 1, wherein (a) and (b) are performed in an integrated processing system.
Claim 7
Dependent Claim
13 words
The method of claim 1, wherein planarizing is performed by chemical mechanical polishing.
Claim 8
Dependent Claim
41 words
The method of claim 1, wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride titanium silicon nitride, tungsten nitride, tungsten silicon nitride, tantalum, tantalum nitride, tantalum silicon nitride, doped silicon, aluminum, and aluminum oxides.
Claim 9
Independent Claim
88 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) chemical vapor depositing a conductive material on the barrier layer and annealing the conductive material to fill the via definition; and c) physical vapor depositing the conductive material on the annealed conductive material to fill the wire definition; and d) planarizing the conductive material, barrier layer, and dielectric layer to define a conductive wire.
Claim 10
Independent Claim
88 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) chemical vapor depositing a conductive material on the barrier layer and annealing the conductive material to fill the via definition; and c) physical vapor depositing the conductive material on the annealed conductive material to fill the wire definition; and d) planarizing the conductive material, barrier layer, and dielectric layer to define a conductive wire.
Claim 11
Dependent Claim
14 words
The method of claim 8, wherein the conductive material is copper or doped copper.
Claim 12
Dependent Claim
21 words
The method of claim 8, wherein the conductive material is selected from the group consisting of copper, aluminum, and mixtures thereof.
Claim 13
Dependent Claim
16 words
The method of claim 8, wherein (a) through (d) are performed in an integrated processing system.
Claim 14
Dependent Claim
41 words
The method of claim 8, wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, titanium silicon nitride, tungsten nitride, tungsten silicon nitride, tantalum, tantalum nitride, tantalum silicon nitride, doped silicon, aluminum, and aluminum oxides.
Claim 15
Dependent Claim
16 words
The method of claim 8, further comprising annealing the conductive metal after the physical vapor deposition.
Claim 16
Independent Claim
93 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) chemical vapor depositing a first conductive material on the barrier layer; then c) annealing the first conductive material to fill the via definition; then d) physical vapor depositing the second conductive material on the annealed first conductive material to fill the wire definition; and e) planarizing the conductive material, barrier layer, and dielectric layers to define a conductive wire.
Claim 17
Independent Claim
93 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) chemical vapor depositing a first conductive material on the barrier layer; then c) annealing the first conductive material to fill the via definition; then d) physical vapor depositing the second conductive material on the annealed first conductive material to fill the wire definition; and e) planarizing the conductive material, barrier layer, and dielectric layers to define a conductive wire.
Claim 18
Dependent Claim
16 words
The method of claim 14, wherein the step of planarizing is performed by chemical mechanical polishing.
Claim 19
Dependent Claim
41 words
The method of claim 14, wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, titanium silicon nitride, tungsten nitride, tungsten silicon nitride, tantalum, tantalum nitride, tantalum silicon nitride, doped silicon, aluminum, and aluminum oxides.
Claim 20
Dependent Claim
20 words
The method of claim 14, wherein the first conductive material is copper and the second conductive material is doped copper.
Claim 21
Independent Claim
84 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) electroplating a conductive material on the barrier layer to fill the via definition; c) physical vapor depositing the conductive material to fill the wire definition, wherein the conductive material deposited by electroplating is annealed prior to the physical vapor deposition; and d) planarizing the conductive material and the barrier layer.
Claim 22
Independent Claim
84 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) electroplating a conductive material on the barrier layer to fill the via definition; c) physical vapor depositing the conductive material to fill the wire definition, wherein the conductive material deposited by electroplating is annealed prior to the physical vapor deposition; and d) planarizing the conductive material and the barrier layer.
Claim 23
Dependent Claim
16 words
The method of claim 18, wherein the conductive material deposited by physical vapor deposition comprises dopants.
Claim 24
Dependent Claim
41 words
The method of claim 18, wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, titanium silicon nitride, tungsten nitride, tungsten silicon nitride, tantalum, tantalum nitride, tantalum silicon nitride, doped silicon, aluminum, and aluminum oxides.
Claim 25
Independent Claim
78 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) electroplating a first conductive material on the barrier layer; c) annealing the first conductive material; d) physical vapor depositing a second conductive material on the annealed conductive material to fill the via and wire definition; and e) planarizing the conductive material and barrier layer.
Claim 26
Independent Claim
78 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) electroplating a first conductive material on the barrier layer; c) annealing the first conductive material; d) physical vapor depositing a second conductive material on the annealed conductive material to fill the via and wire definition; and e) planarizing the conductive material and barrier layer.
Claim 27
Dependent Claim
15 words
The method of claim 21, wherein the second conductive material is copper or doped copper.
Claim 28
Dependent Claim
41 words
The method of claim 22, wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, titanium silicon nitride, tungsten nitride, tungsten silicon nitride, tantalum, tantalum nitride, tantalum silicon nitride, doped silicon, aluminum, and aluminum oxides.
Claim 29
Independent Claim
97 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) chemical vapor depositing a first conductive material on the barrier layer; c) annealing the first conductive material to fill the via definition; d) chemical vapor depositing a second conductive material on the annealed first conductive material; e) annealing the second conductive material to fill the wire definition; and f) planarizing the conductive material, barrier layer, and dielectric layers to define a conductive wire.
Claim 30
Independent Claim
97 words
A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising: a) depositing a barrier layer on exposed surfaces of the dielectric layer; b) chemical vapor depositing a first conductive material on the barrier layer; c) annealing the first conductive material to fill the via definition; d) chemical vapor depositing a second conductive material on the annealed first conductive material; e) annealing the second conductive material to fill the wire definition; and f) planarizing the conductive material, barrier layer, and dielectric layers to define a conductive wire.
Claim 31
Dependent Claim
16 words
The method of claim 24, wherein the step of planarizing is performed by chemical mechanical polishing.
Claim 32
Dependent Claim
41 words
The method of claim 24, wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, titanium silicon nitride, tungsten nitride, tungsten silicon nitride; tantalum, tantalum nitride, tantalum silicon nitride, doped silicon, aluminum, and aluminum oxides.
References Cited (Backward Citations)
US5010032A
Cited
JPS639925A
Cited
US4985750A
Cited
US4960732A
Cited
US4994410A
Cited
US4938996A
Cited
US4920072A
Cited
US4920073A
Cited
US5081064A
Cited
US5091339A
Cited
US5250465A
Cited
US5480836A
Cited
US5292558A
Cited
US5585673A
Cited
EP0558004A2
Cited
US5739579A
Cited
US5354712A
Cited
US5439731A
Cited
JPH0810693A
Cited
JPH08181141A
Cited
US5595937A
Cited
EP0776037A2
Cited
US5824599A
Cited
US5814557A
Cited
US5693563A
Cited
WO1998027585A1
Cited
US5858873A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-22 | 2003-05-24 | 2003-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-22 | 2007-05-24 | 2007-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-22 | 2011-05-24 | 2011-11-23 | $7700.00 | Window Closed / Lapsed |