US5292558A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for metal deposition for microelectronic interconnections
Assignee: The University of Texas at Austin
•
Filing: 1991-08-08
•
Granted: 1994-03-08
•
Expires: 2011-08-08
Abstract
Abstract A method for forming interconnections in microelectronic devices, including interconnections through small vias between different layers in the microelectronic devices include the spin coating of a film comprising a polyoxometalate and an organic material on the substrate. The film is optionally patterned by lithography, the polymer is removed, and the polyoxometalate is reduced to a metal layer. The metal layer may in one embodiment provide a nucleating zone for the deposition of metal.
Inventors
- 👤 Adam Heller
- 👤 Panagiotis Argitis
- 👤 Joseph C. Carls
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:31
CPC Classifications
C; C23; C23C; C23C18/00; C23C18/02; C23C18/08; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 140
Claim 1
Independent Claim
97 words
A method of selectively forming interconnections in a microelectronic device comprising: spin coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; substantially removing the organic constituent of said film; and reducing the film from which the organic constituent has been substantially removed to a metallic layer.
Claim 2
Independent Claim
97 words
A method of selectively forming interconnections in a microelectronic device comprising: spin coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; substantially removing the organic constituent of said film; and reducing the film from which the organic constituent has been substantially removed to a metallic layer.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein at least some of said organic constituent is removed by heating at a temperature in the range of approximately 250° C. to 700° C.
Claim 4
Dependent Claim
13 words
The method of claim 2 wherein said heating is in an oxygen-containing atmosphere.
Claim 5
Dependent Claim
28 words
The method of claim 1 wherein said reducing is carried out by heating in a hydrogen-containing atmosphere at a temperature in the range of 300° to 1100° C.
Claim 6
Dependent Claim
29 words
The method of claim 1 wherein said reducing is carried out by heating in an atmosphere containing a hydrogen precursor which upon heating decomposes to form a hydrogen-containing mixture.
Claim 7
Dependent Claim
15 words
The method of claim 1 wherein said reducing is carried out in a hydrogen-containing plasma.
Claim 8
Dependent Claim
14 words
The method of claim 1 wherein the solution which is spin coated includes water.
Claim 9
Dependent Claim
25 words
The method of claim 1 wherein the resulting metallic layer forms a conducting interdiffusion barrier, reducing the rate of interdiffusion above and below the barrier.
Claim 10
Dependent Claim
17 words
The method of claim 1 including the additional step of depositing a metal on said metallic layer.
Claim 11
Dependent Claim
39 words
The method of claim 1 including the additional step of exposing the film to a solution containing a polyoxometalate in acid prior to removing at least some of the organic constituent to increase the polyoxometalate content of the film.
Claim 12
Dependent Claim
11 words
The method of claim 10 wherein said solution includes phosphotungstic acid.
Claim 13
Dependent Claim
30 words
The method of claim 9 wherein said reducing is carried out by heating in a hydrogen-containing atmosphere at a temperature in the range of approximately 300° C. to 1100° C.
Claim 14
Dependent Claim
32 words
The method of claim 9 wherein said reducing is carried out by heating in a furnace in an atmosphere containing a hydrogen precursor which upon heating decomposes to form a hydrogen-containing mixture.
Claim 15
Dependent Claim
15 words
The method of claim 9 wherein said reducing is carried out in a hydrogen-containing plasma.
Claim 16
Dependent Claim
14 words
The method of claim 9 wherein said solution which is spin coated includes water.
Claim 17
Dependent Claim
25 words
The method of claim 9 wherein the resulting metallic layer forms a conducting interdiffusion barrier, reducing the rate of interdiffusion above and below the barrier.
Claim 18
Dependent Claim
22 words
The method of claim 9 including the additional step of activating the metallic layer formed by reducing using palladium for said activating.
Claim 19
Dependent Claim
18 words
The method of claim 9 wherein the metal which is deposited is selectively deposited by chemical vapor deposition.
Claim 20
Dependent Claim
27 words
The method of claim 17 wherein the metal which is deposited on said metallic layer is selected from the group consisting of tungsten, molybdenum, copper, and aluminum.
Claim 21
Dependent Claim
17 words
The method of claim 9 wherein the metal which is deposited is selectively deposited by electroless plating.
Claim 22
Dependent Claim
23 words
The method of claim 20 wherein the metal which is selectively deposited is selected from the group consisting of nickel, palladium, and copper.
Claim 23
Independent Claim
127 words
A method of selectively forming interconnections in a microelectronic device comprising: spin-coating on a surface of said microelectric device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a radiation sensitive resist film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; lithographically patterning selected regions of said film to remove said film in said selected regions; substantially removing said organic constituent of the lithographically patterned film; reducing said lithographically patterned film from which said organic constituent has been removed to a patterned metallic layer; and selectively depositing a metal on said patterned metallic layer.
Claim 24
Independent Claim
127 words
A method of selectively forming interconnections in a microelectronic device comprising: spin-coating on a surface of said microelectric device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a radiation sensitive resist film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; lithographically patterning selected regions of said film to remove said film in said selected regions; substantially removing said organic constituent of the lithographically patterned film; reducing said lithographically patterned film from which said organic constituent has been removed to a patterned metallic layer; and selectively depositing a metal on said patterned metallic layer.
Claim 25
Dependent Claim
39 words
The method of claim 22 including the additional step of exposing the film to a solution containing a polyoxometalate in acid prior to removing at least some of the organic constituent to increase the polyoxometalate content of the film.
Claim 26
Dependent Claim
11 words
The method of claim 23 wherein said solution includes phosphotungstic acid.
Claim 27
Dependent Claim
30 words
The method of claim 22 wherein at least some of the organic constituent is removed by heating at a temperature in the range of approximately 250° C. to 700° C.
Claim 28
Dependent Claim
13 words
The method of claim 25 wherein said heating is in an oxygen-containing atmosphere.
Claim 29
Dependent Claim
26 words
The method of claim 22 wherein said reducing includes heating in a hydrogen-containing atmosphere at a temperature in the range of 300° C. to 1100° C.
Claim 30
Dependent Claim
29 words
The method of claim 22 wherein said reducing is carried out by heating in an atmosphere containing a hydrogen precursor that upon heating decomposes to form a hydrogen-containing mixture.
Claim 31
Dependent Claim
15 words
The method of claim 22 wherein said reducing is carried out in a hydrogen-containing plasma.
Claim 32
Dependent Claim
15 words
The method of claim 22 wherein the metal is selectively deposited by chemical vapor deposition.
Claim 33
Dependent Claim
22 words
The method of claim 30 wherein the metal selectively deposited is selected from the group consisting of tungsten, molybdenum, copper and aluminum.
Claim 34
Dependent Claim
33 words
The method of claim 22 wherein the metallic layer formed by reducing is activated for electroless plating by deposition of a metal selected from Group VIII of the periodic table onto its surface.
Claim 35
Dependent Claim
14 words
The method of claim 22 wherein the metal is selectively deposited by electroless plating.
Claim 36
Dependent Claim
21 words
The method of claim 33 wherein the metal selectively deposited is selected from the group consisting of nickel, palladium and copper.
Claim 37
Dependent Claim
10 words
The method of claim 22 wherein said solution includes water.
Claim 38
Dependent Claim
25 words
The method of claim 22 wherein said metallic layer forms a conducting interdiffusion barrier, reducing the rate of interdiffusion positioned above and below the barrier.
Claim 39
Dependent Claim
33 words
The method of forming interconnections in microelectronic devices of claim 22 wherein the patterned metallic layer includes separated metallic sites formed on an insulator with said interconnections extending between said separated metallic sites.
Claim 40
Independent Claim
145 words
A method of selectively forming interconnections in a microelectronic device comprising: spin-coating on a surface of said microelectronic device a radiation sensitive solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a first film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; lithographically exposing selected regions of said first film; removing the unexposed portions of said first film to provide a patterned polyoxometalate film; removing the patterned polyoxometalate film from the unexposed regions of said first film; substantially removing the organic constituent of said patterned polyoxometalate film to provide a second patterned film reducing said second patterned film to a patterned metallic layer; and selectively depositing a metal on said patterned metallic layer.
Claim 41
Independent Claim
145 words
A method of selectively forming interconnections in a microelectronic device comprising: spin-coating on a surface of said microelectronic device a radiation sensitive solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a first film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; lithographically exposing selected regions of said first film; removing the unexposed portions of said first film to provide a patterned polyoxometalate film; removing the patterned polyoxometalate film from the unexposed regions of said first film; substantially removing the organic constituent of said patterned polyoxometalate film to provide a second patterned film reducing said second patterned film to a patterned metallic layer; and selectively depositing a metal on said patterned metallic layer.
Claim 42
Dependent Claim
41 words
The method of claim 38 including the additional step of exposing said first film to a solution containing a polyoxometalate in acid prior to removing at least some of said organic constituent to increase the polyoxometalate content of said first film.
Claim 43
Dependent Claim
11 words
The method of claim 39 wherein said acid is phosphotungstic acid.
Claim 44
Dependent Claim
30 words
The method of claim 38 wherein at least some of said organic constituent is removed by heating at a temperature in the range of approximately 250° C. to 700° C.
Claim 45
Dependent Claim
13 words
The method of claim 41 wherein said heating is in an oxygen-containing atmosphere.
Claim 46
Dependent Claim
27 words
The method of claim 38 wherein said reducing is carried out by heating in a hydrogen-containing atmosphere at a temperature of approximately 300° C. to 1100° C.
Claim 47
Dependent Claim
29 words
The method of claim 38 wherein said reducing is carried out by heating in an atmosphere containing a hydrogen precursor that upon heating decomposes to form a hydrogen-containing mixture.
Claim 48
Dependent Claim
15 words
The method of claim 38 wherein said reducing is carried out in a hydrogen-containing plasma.
Claim 49
Dependent Claim
18 words
The method of claim 38 wherein the metal which is selectively deposited is deposited by chemical vapor deposition.
Claim 50
Dependent Claim
22 words
The method of claim 38 wherein the metal selectively deposited is selected from the group consisting of tungsten, molybdenum, copper and aluminum.
Claim 51
Dependent Claim
26 words
The method of claim 38 wherein said patterned metallic layer is activated for electroless deposition of a metal selected from Group VIII of the periodic table.
Claim 52
Dependent Claim
14 words
The method of claim 38 wherein the metal is selectively deposited by electroless plating.
Claim 53
Dependent Claim
27 words
The method of claim 38 wherein the metal selectively deposited is deposited by electroless plating and is selected from the group consisting of nickel, palladium and copper.
Claim 54
Dependent Claim
10 words
The method of claim 38 wherein the solution includes water.
Claim 55
Dependent Claim
25 words
The method of claim 38 wherein said patterned metallic layer forms a conducting interdiffusion barrier, reducing the rate of interdiffusion above and below the barrier.
Claim 56
Dependent Claim
34 words
The method of forming interconnections in microelectronic devices according to claim 38 wherein said patterned metallic layer includes separated metallic sites formed on an insulator with said interconnections extending between said separated metallic sites.
Claim 57
Independent Claim
92 words
A method of selectively forming interconnections in a microelectronic device comprising: spin-coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; substantially removing the organic constituent of said film and simultaneously reducing said film to a metallic film in a hydrogen-containing plasma.
Claim 58
Independent Claim
92 words
A method of selectively forming interconnections in a microelectronic device comprising: spin-coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; substantially removing the organic constituent of said film and simultaneously reducing said film to a metallic film in a hydrogen-containing plasma.
Claim 59
Dependent Claim
45 words
The method of forming interconnections in a microelectronic device of claim 59 including the additional steps of: microlithographically patterning said film prior to removing at least some of said organic constituent of said film; and additionally depositing a metal onto the hydrogen plasma reduced film.
Claim 60
Dependent Claim
71 words
The method of forming interconnections in microelectronic devices of claim 54 wherein said microelectronic device includes circuitry at at least two levels that are separated by at least one electrically insulating layer through interconnecting vias extending between sites in circuitry at different levels; said film being a radiation sensitive resist and covering areas of the surface including the via walls; and selectively depositing an additional metal layer on said metallic film.
Claim 61
Independent Claim
100 words
A method of forming interconnections in microelectronic devices, having circuitry at at least two different levels that are separated by at least one electrically insulating layer through interconnecting vias extending between sites in circuitry at said different levels comprising: said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; spin-coating a solution containing a polyoxometalate, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film covering areas including the vias; reducing said film to a metallic layer.
Claim 62
Independent Claim
100 words
A method of forming interconnections in microelectronic devices, having circuitry at at least two different levels that are separated by at least one electrically insulating layer through interconnecting vias extending between sites in circuitry at said different levels comprising: said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; spin-coating a solution containing a polyoxometalate, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film covering areas including the vias; reducing said film to a metallic layer.
Claim 63
Dependent Claim
25 words
The method of forming interconnections in microelectronic devices of claim 57 including the additional step of depositing an additional metal layer onto said metallic layer.
Claim 64
Dependent Claim
33 words
The method of claim 58 wherein the reducing of said film is carried out by heating in a hydrogen-containing atmosphere at a temperature in the range of approximately 300° C. to 1100° C.
Claim 65
Dependent Claim
29 words
The method of claim 58 wherein the reducing of said film includes heating in an atmosphere containing a hydrogen precursor that upon heating decomposes to form a hydrogen-containing mixture.
Claim 66
Dependent Claim
16 words
The method of claim 58 wherein the reducing of said film is in a hydrogen-containing plasma.
Claim 67
Dependent Claim
10 words
The method of claim 58 wherein said solution includes water.
Claim 68
Dependent Claim
25 words
The method of claim 58 including the additional step of activating said metallic layer with a metal selected from Group VIII of the periodic table.
Claim 69
Dependent Claim
11 words
The method of claim 63 wherein the activating metal is palladium.
Claim 70
Dependent Claim
21 words
The method of claim 58 wherein said additional metal layer is provided by a metal selectively deposited by chemical vapor deposition.
Claim 71
Dependent Claim
22 words
The method of claim 65 wherein the metal selectively deposited is selected from the group consisting of tungsten, molybdenum, copper and aluminum.
Claim 72
Dependent Claim
20 words
The method of claim 58 wherein said additional metal layer is provided by a metal selectively deposited by electroless plating.
Claim 73
Dependent Claim
21 words
The method of claim 67 wherein the metal selectively deposited is selected from the group consisting of nickel, palladium, and copper.
Claim 74
Independent Claim
118 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electrically insulated layer, through interconnecting vias extending between sites in circuitry at said different levels comprising: spin-coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of Groups V and VI of the periodic table to provide a film covering areas of the surface including the vias; removing at least some of said organic constituent of said film; reducing said film to a first metallic layer; and depositing an additional metal layer on said first metallic layer.
Claim 75
Independent Claim
118 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electrically insulated layer, through interconnecting vias extending between sites in circuitry at said different levels comprising: spin-coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of Groups V and VI of the periodic table to provide a film covering areas of the surface including the vias; removing at least some of said organic constituent of said film; reducing said film to a first metallic layer; and depositing an additional metal layer on said first metallic layer.
Claim 76
Dependent Claim
39 words
The method of claim 69 including the additional step of exposing the film to a solution containing a polyoxometalate in acid prior to removing at least some of the organic constituent to increase the polyoxometalate content of the film.
Claim 77
Dependent Claim
11 words
The method of claim 70, wherein said acid is phosphotungstic acid.
Claim 78
Dependent Claim
30 words
The method of claim 69 wherein said reducing is carried out by heating in a hydrogen-containing atmosphere at a temperature in the range of approximately 300° C. to 1100° C.
Claim 79
Dependent Claim
29 words
The method of claim 69 wherein said reducing is carried out by heating in an atmosphere containing a hydrogen precursor that upon heating decomposes to form a hydrogen-containing mixture.
Claim 80
Dependent Claim
15 words
The method of claim 69 wherein said reducing is carried out in a hydrogen-containing plasma.
Claim 81
Dependent Claim
10 words
The method of claim 69 wherein said solution includes water.
Claim 82
Dependent Claim
25 words
The method of claim 69 including the additional step of activating said metallic layer with a metal selected from Group VIII of the periodic table.
Claim 83
Dependent Claim
11 words
The method of claim 76 wherein the activating metal is palladium.
Claim 84
Dependent Claim
18 words
The method of claim 69 wherein said additional metal layer is selectively deposited onto said first metallic layer.
Claim 85
Dependent Claim
22 words
The method of claim 78 wherein the metal selectively deposited is selected from the group consisting of tungsten, molybdenum, copper, and aluminum.
Claim 86
Independent Claim
162 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels that are separated by at least one electrically insulating layer through interconnecting vias extending between circuitry at said different levels comprising: spin-coating on exposed surfaces of said microelectronic device and on the walls of said vias a first solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a radiation sensitive resist film covering said exposed surfaces and said via walls; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; lithographically patterning said radiation sensitive resist film to remove selected regions from said exposed surfaces; substantially removing the organic constituent of the patterned film; reducing said patterned film to a patterned metallic layer; and selectively depositing an additional metal layer on said patterned metallic layer.
Claim 87
Independent Claim
162 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels that are separated by at least one electrically insulating layer through interconnecting vias extending between circuitry at said different levels comprising: spin-coating on exposed surfaces of said microelectronic device and on the walls of said vias a first solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a radiation sensitive resist film covering said exposed surfaces and said via walls; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; lithographically patterning said radiation sensitive resist film to remove selected regions from said exposed surfaces; substantially removing the organic constituent of the patterned film; reducing said patterned film to a patterned metallic layer; and selectively depositing an additional metal layer on said patterned metallic layer.
Claim 88
Dependent Claim
44 words
The method of claim 80 including the additional step of adding a solution containing a polyoxometalate in acid to said radiation sensitive resist film prior to removing at least some of the organic constituent in order to increase the polyoxometalate content of the film.
Claim 89
Dependent Claim
11 words
The method of claim 81 wherein said acid is phosphotungstic acid.
Claim 90
Dependent Claim
27 words
The method of claim 81 wherein the organic constituent is substantially removed by heating at a temperature in the range of approximately 250° C. to 700° C.
Claim 91
Dependent Claim
13 words
The method of claim 83 wherein said heating is in an oxygen-containing atmosphere.
Claim 92
Dependent Claim
35 words
The method of claim 81 wherein said reducing is carried out by heating in a furnace in a hydrogen-containing atmosphere by heating at a temperature in the range of approximately 300° C. to 1100° C.
Claim 93
Dependent Claim
32 words
The method of claim 81 wherein said reducing is carried out by heating in a furnace in an atmosphere containing a hydrogen precursor that upon heating decomposes to form a hydrogen-containing mixture.
Claim 94
Dependent Claim
15 words
The method of claim 81 wherein said reducing is carried out in a hydrogen-containing plasma.
Claim 95
Dependent Claim
28 words
The method of claim 81 wherein said additional metal layer is selectively deposited and includes a metal selected from the group consisting of tungsten, molybdenum, copper, and aluminum.
Claim 96
Dependent Claim
31 words
The method of claim 81 wherein said patterned metallic film is activated for electroless plating by deposition onto its surface of an element selected from Group VIII of the periodic table.
Claim 97
Dependent Claim
28 words
The method of claim 81 wherein said additional metal layer is selectively deposited by electroless plating and is selected from the group consisting of nickel, palladium and copper.
Claim 98
Dependent Claim
11 words
The method of claim 81 wherein said first solution contains water.
Claim 99
Independent Claim
185 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electrically insulating layer, through interconnecting vias extending between sites in circuitry at said different levels comprising: spin-coating on surfaces of said microelectronic device a first solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a radiation sensitive resist film covering said surfaces and said vias; lithographically patterning said radiation sensitive film to remove selected regions thereof and provide a lithographically patterned film; removing the polyoxometalate from the regions not covered by said lithographically patterned film to provide a patterned polyoxometalate film covering areas of said microelectronic device including said vias; removing said lithographically patterned film; removing the unprotected areas of said patterned polyoxometalate film to provide a modified polyoxometalate film; substantially removing the organic constituent of said modified polyoxometalate film; reducing said modified polyoxometalate film to provide a patterned metallic layer; and selectively depositing an additional metal layer on said patterned metallic layer.
Claim 100
Independent Claim
185 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electrically insulating layer, through interconnecting vias extending between sites in circuitry at said different levels comprising: spin-coating on surfaces of said microelectronic device a first solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a radiation sensitive resist film covering said surfaces and said vias; lithographically patterning said radiation sensitive film to remove selected regions thereof and provide a lithographically patterned film; removing the polyoxometalate from the regions not covered by said lithographically patterned film to provide a patterned polyoxometalate film covering areas of said microelectronic device including said vias; removing said lithographically patterned film; removing the unprotected areas of said patterned polyoxometalate film to provide a modified polyoxometalate film; substantially removing the organic constituent of said modified polyoxometalate film; reducing said modified polyoxometalate film to provide a patterned metallic layer; and selectively depositing an additional metal layer on said patterned metallic layer.
Claim 101
Dependent Claim
39 words
The method of claim 92 including the additional step of exposing the film to a solution containing a polyoxometalate in acid prior to removing at least some of the organic constituent to increase the polyoxometalate content of the film.
Claim 102
Dependent Claim
12 words
The method of claim 93 wherein said first solution contains phosphotungstic acid.
Claim 103
Dependent Claim
27 words
The method of claim 92 wherein the organic constituent is substantially removed by heating at a temperature in the range of approximately 250° C. to 700° C.
Claim 104
Dependent Claim
13 words
The method of claim 95 wherein said heating is in an oxygen-containing atmosphere.
Claim 105
Dependent Claim
33 words
The method of claim 92 wherein said reducing is carried out by heating in a furnace in a hydrogen-containing atmosphere at a temperature in the range of approximately 300° C. to 1100° C.
Claim 106
Dependent Claim
32 words
The method of claim 92 wherein said reducing is carried out by heating in a furnace in an atmosphere containing a hydrogen precursor that upon heating decomposes to form a hydrogen-containing mixture.
Claim 107
Dependent Claim
15 words
The method of claim 92 wherein said reducing is carried out in a hydrogen-containing plasma.
Claim 108
Dependent Claim
22 words
The method of claim 92 wherein said additional metal layer is selected from the group consisting of tungsten, molybdenum, copper and aluminum.
Claim 109
Dependent Claim
22 words
The method of claim 92 wherein said patterned metallic layer is activated for electroless plating by deposition of palladium onto its surface.
Claim 110
Dependent Claim
30 words
The method of claim 92 wherein said additional metal layer which is selectively deposited onto said patterned metallic layer is selected from the group consisting of nickel, palladium and copper.
Claim 111
Dependent Claim
11 words
The method of claim 92 wherein said first solution contains water.
Claim 112
Independent Claim
218 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electronically insulating layer, through interconnecting vias extending between sites in circuitry at different levels comprising: spin-coating on said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a first film covering said levels of said microelectronic device and the vias; spin-coating on said first film a radiation sensitive resist film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; lithographically exposing selected regions of said radiation sensitive resist film on said surfaces of said levels to remove selected regions to provide a lithographically patterned film; removing the unexposed portions of said radiation sensitive film on said surfaces of said levels to provide a patterned polyoxometalate film covering said selected surfaces and said vias; substantially removing the organic constituent of the unexposed portion of said radiation sensitive film on said surfaces and said vias to provide a modified patterned film; reducing said modified patterned film to provide a patterned metallic layer; and selectively depositing an additional metal layer on the patterned metallic layer.
Claim 113
Independent Claim
218 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electronically insulating layer, through interconnecting vias extending between sites in circuitry at different levels comprising: spin-coating on said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a first film covering said levels of said microelectronic device and the vias; spin-coating on said first film a radiation sensitive resist film; said polyoxometalate being soluble in water and polar organic solvents and including said one element in a high oxidation state; lithographically exposing selected regions of said radiation sensitive resist film on said surfaces of said levels to remove selected regions to provide a lithographically patterned film; removing the unexposed portions of said radiation sensitive film on said surfaces of said levels to provide a patterned polyoxometalate film covering said selected surfaces and said vias; substantially removing the organic constituent of the unexposed portion of said radiation sensitive film on said surfaces and said vias to provide a modified patterned film; reducing said modified patterned film to provide a patterned metallic layer; and selectively depositing an additional metal layer on the patterned metallic layer.
Claim 114
Dependent Claim
41 words
The method of claim 104 including the additional step of exposing said radiation sensitive film to a solution containing a polyoxometalate in acid prior to removing at least some of the organic constituent to increase the polyoxometalate content of the film.
Claim 115
Dependent Claim
11 words
The method of claim 105 wherein said solution contains phosphotungstic acid.
Claim 116
Independent Claim
114 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two levels separated by at least one electrically insulating layer, through interconnecting vias extending between sites in circuitry at said different levels comprising: spin-coating a solution containing a polyoxometalate, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film covering the surface areas of said levels and said vias; reducing said film to a metallic layer; substantially removing the metallic layer from said surfaces of said microelectronic device by anisotropic back etching; and selectively depositing an additional metal layer on the residual metallic layer in said vias.
Claim 117
Independent Claim
114 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two levels separated by at least one electrically insulating layer, through interconnecting vias extending between sites in circuitry at said different levels comprising: spin-coating a solution containing a polyoxometalate, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film covering the surface areas of said levels and said vias; reducing said film to a metallic layer; substantially removing the metallic layer from said surfaces of said microelectronic device by anisotropic back etching; and selectively depositing an additional metal layer on the residual metallic layer in said vias.
Claim 118
Dependent Claim
30 words
The method of claim 107 wherein said reducing is carried out by heating in a hydrogen-containing atmosphere at a temperature in the approximate range of 300° C. to 1100° C.
Claim 119
Dependent Claim
29 words
The method of claim 107 wherein said reducing is carried out by heating in an atmosphere containing a hydrogen precursor that upon heating decomposes to form a hydrogen-containing mixture.
Claim 120
Dependent Claim
15 words
The method of claim 107 wherein said reducing is carried out in a hydrogen-containing plasma.
Claim 121
Dependent Claim
31 words
The method of claim 107 wherein the metal which is selectively deposited is deposited by chemical vapor deposition and is selected from the group consisting of tungsten, molybdenum, copper and aluminum.
Claim 122
Dependent Claim
30 words
The method of claim 107 wherein the metallic film formed by reducing is activated for electroless plating by deposition of a metal selected from Group VIII of the periodic table.
Claim 123
Dependent Claim
19 words
The method of claim 107 wherein the additional metal layer which is selectively deposited is deposited by electroless plating.
Claim 124
Dependent Claim
24 words
The method of claim 113 wherein the metal selectively deposited by electroless plating is selected from the group consisting of nickel, palladium and copper.
Claim 125
Dependent Claim
10 words
The method of claim 107 wherein said solution contains water.
Claim 126
Independent Claim
121 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electrically insulating layer, through metallized interconnecting vias extending substantially perpendicular between sites in circuitry at said different level comprising: spin-coating a first solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film covering areas including the vias; substantially removing the organic constituent of the film; reducing said film to a first metallic layer; removing said film from selected areas of said levels by anisotropic back etching; and selectively depositing an additional metal layer on said first metallic layer.
Claim 127
Independent Claim
121 words
A method of forming interconnections in a microelectronic device, having circuitry at at least two different levels separated by at least one electrically insulating layer, through metallized interconnecting vias extending substantially perpendicular between sites in circuitry at said different level comprising: spin-coating a first solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting of tungsten, molybdenum, vanadium, niobium, and tantalum to provide a film covering areas including the vias; substantially removing the organic constituent of the film; reducing said film to a first metallic layer; removing said film from selected areas of said levels by anisotropic back etching; and selectively depositing an additional metal layer on said first metallic layer.
Claim 128
Dependent Claim
40 words
The method of claim 116 including the additional step of exposing the film to a second solution containing a polyoxometalate in acid prior to removing at least some of the organic constituent to increase the polyoxometalate content of the film.
Claim 129
Dependent Claim
12 words
The method of claim 117 wherein said second solution contains phosphotungstic acid.
Claim 130
Dependent Claim
25 words
The method of claim 116 wherein the organic constituent is removed by heating at a temperature in the range of 250° C. to 700° C.
Claim 131
Dependent Claim
13 words
The method of claim 119 wherein said heating is in an oxygen-containing atmosphere.
Claim 132
Dependent Claim
28 words
The method of claim 116 wherein said reducing is carried out by heating in a hydrogen-containing atmosphere at a temperature in the range of 300° to 1100° C.
Claim 133
Dependent Claim
29 words
The method of claim 116 wherein said reducing is carried out by heating in an atmosphere containing a hydrogen precursor which upon heating decomposes to form a hydrogen-containing mixture.
Claim 134
Dependent Claim
15 words
The method of claim 116 wherein said reducing is carried out in a hydrogen-containing plasma.
Claim 135
Dependent Claim
20 words
The method of claim 116 wherein the additional metal layer which is selectively deposited is deposited by chemical vapor deposition.
Claim 136
Dependent Claim
24 words
The method of claim 124 wherein the additional metal layer includes a metal selected from the group consisting of tungsten, molybdenum, copper and aluminum.
Claim 137
Dependent Claim
29 words
The method of claim 116 wherein the first metallic film is activated for electroless plating by deposition thereon of an element selected from Group VIII of the periodic table.
Claim 138
Dependent Claim
21 words
The method of claim 116 wherein the additional metal layer is selectively deposited onto the first metallic layer by electroless plating.
Claim 139
Dependent Claim
23 words
The method of claim 127 wherein said additional metal layer includes a metal selected from the group consisting of nickel, palladium and copper.
Claim 140
Dependent Claim
11 words
The method of claim 116 wherein said first solution contains water.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-07 | 1997-09-06 | 1998-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-07 | 2001-09-06 | 2002-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-07 | 2005-09-06 | 2006-03-08 | $7700.00 | Window Closed / Lapsed |