Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To fill a contact hole with a high cross-section aspect ratio with wiring metal and obtain a semiconductor device with high reliability by a method wherein, after the metal used for drawing out an electrode in applied to the contact hole, a heat treatment at a melting temperature is performed. CONSTITUTION:An insulating film 202 is formed on a single crystal silicon substrate 201 and an aperture 203 for a contact hole is drilled. Then a titanium film 204 of an about 0.1mum thickness is made to grow by CVD and, if the film 204 is subjected to a heat treatment at about 900 deg.C temperature in a nitrogen atmosphere, the titanium film 204 is converted into a titanium nitride film 205. By this heat treatment, a titanium silicide layer 206 is also formed on the substrate surface and a double-layer structure of the titanium nitride 205 and the titanium silicide 206 is provided at that part. Then aluminum is applied to fill the aperture 203 and form an aluminum layer 207 as a metal wiring. With this constitution, the contact hole with a high cross-section aspect ratio can be filled with the wiring metal and a semiconductor device with high reliability can be obtained.

Inventors

• 👤 Hitoshi Abiko
• 👤 安彦　仁

Bibliographic Details