US4985750A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device using copper metallization
Assignee: Fujitsu Ltd
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Filing: 1987-09-17
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Granted: 1991-01-15
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Expires: 2007-09-17
Abstract
Abstract A semiconductor device comprises a silicon substrate, an insulating film in which a contact hole is formed, a metallic layer deposited on said silicon substrate through the contact hole, for forming an ohmic contact to the silicon substrate, a barrier layer deposited on the metallic layer, for preventing reaction and interdiffusion between copper and silicon, and a metallization film including at least copper deposited on the barrier layer.
Inventors
- 👤 Kazuhiro Hoshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
109 words
A semiconductor device comprising: a silicon substrate having a main surface; an insulating film deposited on the main surface of said silicon substrate and having at least one contact hole extending therethrough exposing the underlying main surface of the silicon substrate; a non-copper containing metallic layer deposited on the main surface of said silicon substrate exposed through said contact hole, and forming an ohmic contact to said silicon substrate; a non-copper containing barrier layer deposited on said metallic layer, the barrier layer comprising a material which prevents reaction and interdiffusion between copper and silicon; and a metallization film comprising copper as a major component deposited on said barrier layer.
Claim 2
Dependent Claim
109 words
A semiconductor device comprising: a silicon substrate having a main surface; an insulating film deposited on the main surface of said silicon substrate and having at least one contact hole extending therethrough exposing the underlying main surface of the silicon substrate; a non-copper containing metallic layer deposited on the main surface of said silicon substrate exposed through said contact hole, and forming an ohmic contact to said silicon substrate; a non-copper containing barrier layer deposited on said metallic layer, the barrier layer comprising a material which prevents reaction and interdiffusion between copper and silicon; and a metallization film comprising copper as a major component deposited on said barrier layer.
Claim 3
Dependent Claim
38 words
A semiconductor device as claimed in claim 1, wherein said barrier layer comprises a material selected from the group consisting of titanium nitride, tungsten, tungsten nitride, zirconium nitride, titanium carbide, tungsten carbide, tantalum, tantalum nitride and titanium tungsten.
Claim 4
Dependent Claim
29 words
A semiconductor device as claimed in claim 1, wherein said metallization film comprises a material selected from the group consisting of copper, a copper-titanium alloy and a copper-zirconium alloy.
Claim 5
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, wherein said metallic layer comprises a material selected from the group consisting of titanium, aluminum and platinum.
Claim 6
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, wherein the thickness of said barrier layer is in the range of 500 Å to 3,000 Å.
Claim 7
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, wherein the thickness of said metallic layer is in the range of 100 Å to 1,000 Å.
Claim 8
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, wherein the thickness of said metallization film is in the range of 3,000 Å to 2 μm.
Claim 9
Dependent Claim
26 words
A semiconductor device as claimed in claim 1 wherein the metallic layer comprises titanium, the barrier layer comprises titanium nitride, and the metallization film comprises copper.
Claim 10
Dependent Claim
33 words
A semiconductor device as claimed in claim 1, wherein the silicon substrate includes a n+ layer, and wherein the metallic layer is deposited on top of the n+ layer of the silicon substrate.
Claim 11
Dependent Claim
34 words
A semiconductor device as claimed in claim 1 wherein the metallic layer is deposited on said silicon substrate through said at least one contact hole and is deposited on top of the insulating film.
Claim 12
Dependent Claim
14 words
A semiconductor device as claimed in claim 1 wherein the insulating film includes silicon.
Claim 13
Dependent Claim
104 words
A semiconductor device comprising: a silicon substrate having a main surface; an insulating film deposited on the main surface of said silicon substrate and having at least one contact hole extending therethrough exposing the underlying main surface of the silicon substrate; a non-copper containing metallic layer deposited on the main surface of said silicon substrate exposed through said contact hole, and forming an ohmic contact to said silicon substrate; a non-copper containing barrier layer deposited on said metallic layer, the barrier layer comprising a material which prevents reaction and interdiffusion between copper and silicon; and a copper metallization film deposited on said barrier layer.
Claim 14
Dependent Claim
104 words
A semiconductor device comprising: a silicon substrate having a main surface; an insulating film deposited on the main surface of said silicon substrate and having at least one contact hole extending therethrough exposing the underlying main surface of the silicon substrate; a non-copper containing metallic layer deposited on the main surface of said silicon substrate exposed through said contact hole, and forming an ohmic contact to said silicon substrate; a non-copper containing barrier layer deposited on said metallic layer, the barrier layer comprising a material which prevents reaction and interdiffusion between copper and silicon; and a copper metallization film deposited on said barrier layer.
Claim 15
Dependent Claim
105 words
A semiconductor device comprising: a silicon substrate having a main surface; an insulating film deposited on the main surface of said silicon substrate and having at least one contact hole extending therethrough exposing the underlying main surface of the silicon substrate; a non-copper containing metallic layer deposited on the main surface of said silicon substrate exposed through said contact hole, and forming an ohmic contact to said silicon substrate; a non-copper containing barrier layer deposited on said metallic layer, the barrier layer comprising a material which prevents reaction and interdiffusion between copper and silicon; and a copper alloy metallization film deposited on said barrier layer.
Claim 16
Dependent Claim
105 words
A semiconductor device comprising: a silicon substrate having a main surface; an insulating film deposited on the main surface of said silicon substrate and having at least one contact hole extending therethrough exposing the underlying main surface of the silicon substrate; a non-copper containing metallic layer deposited on the main surface of said silicon substrate exposed through said contact hole, and forming an ohmic contact to said silicon substrate; a non-copper containing barrier layer deposited on said metallic layer, the barrier layer comprising a material which prevents reaction and interdiffusion between copper and silicon; and a copper alloy metallization film deposited on said barrier layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-14 | 1994-07-16 | 1995-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-14 | 1998-07-16 | 1999-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-14 | 2002-07-16 | 2003-01-15 | $7700.00 | Window Closed / Lapsed |