Semiconductor device

Abstract

Abstract PURPOSE:To obtain a bonding pad section, in which a compound of Au and Al is not generated, by constituting an upper layer wiring by composite layers of a Ti layer, a TiN layer and an Au layer from a lower section when an Al lower layer wiring is applied on a semiconductor substrate with a functional region, the lower layer wiring is coated with an inter-layer insulating film, an opening is bored, and the upper layer wiring being in contact with the lower layer wiring is formed extended on the inter-layer insulating film. CONSTITUTION:A lower layer insulating film 2 is applied on a semiconductor substrate 1 to which a functional region is formed, and an Al lower layer wiring 3 of a predetermined shape is formed on the insulating film 2. The whole surface is coated with inter-layer insulating films 6 consisting of a PSG film 4 and a SiON film 5, an opening 7 is bored, and upper layer gold layer wirings 12 being in contact with the exposed wiring 3 section are applied extended on the films 6. The wirings 12 are constituted by a Ti layer 8 in approximately 500Angstrom thickness, a TiN layer 9 in approximately 3,000Angstrom and an Au layer 10 in approximately 6,500Angstrom from the wiring 3 side at that time, and processed to a predetermined shape, and the partial surface of the wirings 12 is used as a bonding pad section 11.

Inventors

• 👤 Toru Takeuchi
• 👤 竹内　透
• 👤 Kiyoshi Watabe
• 👤 渡部　潔

Bibliographic Details