US5250465A
Expired / Lapsed
US
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Method of manufacturing semiconductor devices
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1992-01-24
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Granted: 1993-10-05
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Expires: 2012-01-24
Abstract
Abstract A semiconductor device having small diameter via-holes, particularly not greater than 0.6 microns, for a multilayer interconnection is produced by a method comprising covering an interlayer film and via-holes with a continuous, first metal film by a CVD process, and heating and melting by an irradiation of an energy beam a second metal film deposited on the first film by a PVD process, together with the first metal film, to fully fill the via-holes with the material from the outside of the holes, to thus form conductive plugs therein. The deposition of the material of the second metal film and the filling of the via-holes may be simultaneously performed by a high temperature sputtering process.
Inventors
- 👤 Masako Iizuka
- 👤 Ryoichi Mukai
- 👤 Motoo Nakano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059; H10P; H10P95/00; H10P95/04
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
164 words
A method of manufacturing a semiconductor device having a conductive layer connected to conductive plugs formed in via-holes, the method comprising; forming via-holes in an interlayer insulating film provided on an underlying conductive layer, the periphery of each via hole being defined by a corresponding inside wall of the interlayer insulating film; depositing a first, continuous metal film on the top surface of the interlayer insulating film and the inside wall of each of the via-holes by a chemical vapor deposition process; depositing a second metal film on the first metal film by a physical vapor deposition process; and melting the first and the second metal films by irradiation of same with an energy beam, thereby to cause the melted metal material of corresponding portions of the first and second metal films, deposited on the top surface of the interlayer insulating film adjacent to the periphery of each via-hole, to flow into and fill the via-hole completely and thereby form a conductive plug therein.
Claim 2
Independent Claim
164 words
A method of manufacturing a semiconductor device having a conductive layer connected to conductive plugs formed in via-holes, the method comprising; forming via-holes in an interlayer insulating film provided on an underlying conductive layer, the periphery of each via hole being defined by a corresponding inside wall of the interlayer insulating film; depositing a first, continuous metal film on the top surface of the interlayer insulating film and the inside wall of each of the via-holes by a chemical vapor deposition process; depositing a second metal film on the first metal film by a physical vapor deposition process; and melting the first and the second metal films by irradiation of same with an energy beam, thereby to cause the melted metal material of corresponding portions of the first and second metal films, deposited on the top surface of the interlayer insulating film adjacent to the periphery of each via-hole, to flow into and fill the via-hole completely and thereby form a conductive plug therein.
Claim 3
Dependent Claim
18 words
The method according to claim 1, wherein the first and second metal films are of the same material.
Claim 4
Dependent Claim
11 words
The method according to claim 2, wherein said material is aluminum.
Claim 5
Dependent Claim
37 words
The method according to claim 3, wherein a thin film for absorbing the energy beam irradiation, consisting of a material selected from the group o titanium, copper and silicon, is provided on the second film of aluminum.
Claim 6
Dependent Claim
20 words
The method according to claim 3, wherein the first film of aluminum has a thickness of at least 20 nanometers.
Claim 7
Independent Claim
219 words
A method of manufacturing a semiconductor device having a conductive layer connected to conductive plugs formed in via-holes, the method comprising: forming via-holes in an interlayer insulating film provided on an underlying conductive layer; depositing a first, continuous metal film on the top surface of the interlayer insulating film and the inside wall of each of the via-holes by a chemical vapor deposition process; depositing a second metal film on the first metal film by a physical vapor deposition process; patterning the second metal film such that corresponding portions thereof remain within the via-hole and on the top surface of the interlayer insulating film adjacent to the periphery of each via-hole; melting the first metal film and the remaining portions of the second metal film by irradiation of same with an energy beam, thereby to cause the melted metal material of the remaining portions of the second metal film and the corresponding portions of the first metal film adjacent the periphery of each via-hole, to flow into and fill each such corresponding via-hole completely and thereby to form a conductive plug therein having an exposed top surface in a substantially common plane with the top surface of the interlayer insulating film; and forming a conductive layer on the exposed top surface of the interlayer insulating film and each plug.
Claim 8
Independent Claim
219 words
A method of manufacturing a semiconductor device having a conductive layer connected to conductive plugs formed in via-holes, the method comprising: forming via-holes in an interlayer insulating film provided on an underlying conductive layer; depositing a first, continuous metal film on the top surface of the interlayer insulating film and the inside wall of each of the via-holes by a chemical vapor deposition process; depositing a second metal film on the first metal film by a physical vapor deposition process; patterning the second metal film such that corresponding portions thereof remain within the via-hole and on the top surface of the interlayer insulating film adjacent to the periphery of each via-hole; melting the first metal film and the remaining portions of the second metal film by irradiation of same with an energy beam, thereby to cause the melted metal material of the remaining portions of the second metal film and the corresponding portions of the first metal film adjacent the periphery of each via-hole, to flow into and fill each such corresponding via-hole completely and thereby to form a conductive plug therein having an exposed top surface in a substantially common plane with the top surface of the interlayer insulating film; and forming a conductive layer on the exposed top surface of the interlayer insulating film and each plug.
Claim 9
Dependent Claim
18 words
The method according to claim 6, wherein the first and second metal films are of the same material.
Claim 10
Dependent Claim
11 words
The method according to claim 7, wherein said material is aluminum.
Claim 11
Dependent Claim
37 words
The method according to claim 8, wherein a thin film for absorbing the energy beam irradiation, consisting of a material selected from the group of titanium, copper and silicon, is provided on the second film of aluminum.
Claim 12
Dependent Claim
20 words
The method according to claim 8, wherein the first film of aluminum has a thickness of at least 20 nanometers.
Claim 13
Independent Claim
161 words
A method of manufacturing a semiconductor device having a conductive layer connected to conductive plugs formed in via-holes, the method comprising: forming via-holes in an interlayer insulating film provided on an underlying conductive layer, the periphery of each via hole being defined by a corresponding inside wall of the interlayer insulating film; depositing a first, continuous metal film on the top surface of the interlayer insulating film and the inside wall of each of the via-holes by a chemical vapor deposition process; depositing a second metal film on the first metal film by a high temperature sputter process, the surface temperature of the deposited second metal film being increased by ion-bombardment due to the plasma during the deposition thereby melting the respective metal materials of the first and second films, the melted metal materials, at least in the corresponding portions thereof adjacent to the periphery of each via-hole, flowing into and filling each via-hole completely and thereby forming a plug therein.
Claim 14
Independent Claim
161 words
A method of manufacturing a semiconductor device having a conductive layer connected to conductive plugs formed in via-holes, the method comprising: forming via-holes in an interlayer insulating film provided on an underlying conductive layer, the periphery of each via hole being defined by a corresponding inside wall of the interlayer insulating film; depositing a first, continuous metal film on the top surface of the interlayer insulating film and the inside wall of each of the via-holes by a chemical vapor deposition process; depositing a second metal film on the first metal film by a high temperature sputter process, the surface temperature of the deposited second metal film being increased by ion-bombardment due to the plasma during the deposition thereby melting the respective metal materials of the first and second films, the melted metal materials, at least in the corresponding portions thereof adjacent to the periphery of each via-hole, flowing into and filling each via-hole completely and thereby forming a plug therein.
Claim 15
Dependent Claim
18 words
The method according to claim 11, wherein the first and second metal films are of the same material.
Claim 16
Dependent Claim
11 words
The method according to claim 12, wherein said material is aluminum.
Claim 17
Dependent Claim
20 words
The method according to claim 13, wherein the first film of aluminum has a thickness of at least 20 nanometers.
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