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EP0194950A2
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High temperature interconnect system for an integrated circuit
Assignee: Fairchild Semiconductor Corp
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Filing: 1986-03-14
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Granted: —
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Expires: 2006-03-14
Abstract
Abstract A semiconductor integrated circuit device is provided with an electrical interconnect system which is stable at high temperatures. The interconnect system employs refractory metal compounds which are electrically conductive, which form stable couples with silicon and compounds thereof, and which remain stable at temperatures exceeding approximately 500°C.
Inventors
- 👤 Michael Thomas
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 18:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/056; H10W20/071; H10W20/092; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
115 words
A method of fabricating a hign temperature interconnect structure for electrically connecting doped regions in a silicon substrate of an integrated circuit device, said method being characterized by the steps of: a) creating contact regions on a surface of said device, each contact region exposing at least a portion of an underlying doped region; b) disposing an electrically conductive barrier layer over said surface into saia contact regions and electrically contacting said underlying aopea regions, saia barrier layer comprising a material which forms a stable thermodynamic couple with silicon and compounds thereof at temperatures exceeding approximately 5000C; ana c) forming said barrier layer into interconnects for electrically interconnecting said doped regions in a predetermined pattern.
Claim 2
Independent Claim
115 words
A method of fabricating a hign temperature interconnect structure for electrically connecting doped regions in a silicon substrate of an integrated circuit device, said method being characterized by the steps of: a) creating contact regions on a surface of said device, each contact region exposing at least a portion of an underlying doped region; b) disposing an electrically conductive barrier layer over said surface into saia contact regions and electrically contacting said underlying aopea regions, saia barrier layer comprising a material which forms a stable thermodynamic couple with silicon and compounds thereof at temperatures exceeding approximately 5000C; ana c) forming said barrier layer into interconnects for electrically interconnecting said doped regions in a predetermined pattern.
Claim 3
Dependent Claim
27 words
The method of claim 1 characterized in that said barrier layer material is selected from the group consisting essentially of metal nitriae, metal boride ana metal carbide.
Claim 4
Dependent Claim
16 words
The method of claim 1 or 2 characterized in that said metal comprises a refractory metal.
Claim 5
Dependent Claim
27 words
The method of claim 3 characterized in that said refractory metal is selected from the group consisting essentially of hafnium, zirconium, titanium, tantalum, niobium, vanadium and chromium.
Claim 6
Dependent Claim
69 words
5 . The method of any one of claims 1-4 characterized by, prior to step b, the additional step of forming a refractory metal disilicide layer within each contact region, saia refractory metal selected, as required to form a stable thermodynamic couple with both the underlying doped region and the subsequently disposed barrier layer, from the group consisting essentially of tungsten, molybdenum, tantalum, niobium, zirconium, titanium, vanadium ana chromium.
Claim 7
Independent Claim
76 words
The method of any one of claims 1-5 characterized by the additional steps of: c) disposing an electrically conductive interconnect layer over said surface into said contact regions and electrically contacting saia barrier layers disposed therein, said interconnect layer comprising a material which forms a stable thermodynamic couple with said barrier layer material at temperatures exceeding approximately 500°C; and d) forming saia interconnect layer into interconnects for electrically interconnecting said doped regions in a preaetermined pattern.
Claim 8
Dependent Claim
27 words
The method of claim 6 characterized in that said interconnect layer material is selected from the group consisting essentially of metal nitride, metal boride, ana metal carbiae.
Claim 9
Dependent Claim
14 words
The method of claim 7 characterizea in tnat saia metal comprises a refractory metal.
Claim 10
Dependent Claim
27 words
The method of claim 8 characterized in that saia refractory metal is selected from the group consisting essentially of hafnium, zirconium, titanium, tantalum, niobium, vanadium and chromium.
Claim 11
Dependent Claim
21 words
The method of claim 6, 7, 8 or 9 characterized in that saia interconnect layer material is a refractory metal disilicide.
Claim 12
Dependent Claim
28 words
The method of claim 10 characterized in that said refractory metal is selected from the group consisting essentially of tungsten, molybdenum, tantalum, niobium, zirconium, titanium, vanadium and chromium.
Claim 13
Independent Claim
21 words
The method of any previous claim characterized in that said refractory metal is chosen from the group comprising tungsten and molybdenum.
Claim 14
Dependent Claim
74 words
The method of claim 5 characterized in that said additional step comprises: depositing a layer of refractory metal, having a predetermined thickness, into said contact regions; heating said device to a predetermined temperature in order to form said metal disilicide regions in said contact regions; removing substantially all unreactea refractory metal; and heating saia aevice at a predetermined temperature in a gaseous nitrogen, boron ana carbon bearing ambient for a predetermined period of time.
Claim 15
Dependent Claim
75 words
The method of claim 6 or 13 characterized by tne steps of: forming a layer of refractory metal over an upper surface of said device and into said contact regions on saia barrier layer; forming a predeterminea interconnect pattern in said refractory metal layer; coating said predetermined interconnect pattern with a layer of an insulating material; and heating the aevice in order to reflow said insulating layer to form a substantially planar upper surface thereon.
Claim 16
Dependent Claim
64 words
The method of claim 14 characterized by the steps of: forming a predetermined pattern of apertures in said insulating layer in a predetermined alignment scheme with respect to such interconnect pattern; forming a secona layer of refractory metal over the upper surface of saia insulating layer into the apertures formed therein; and forming a second predetermined interconnect pattern in said second refractory metal layer.
Claim 17
Dependent Claim
56 words
The method of claim 15 characterized by the steps of: forming a preaetermined number of interconnect patterns by repeating the steps of claim 15; coating the uppermost predetermined interconnect pattern with a layer of an insulating material; and heating the device in oraer to reflow saia insulating layer to form a substantially planar upper surface thereon.
Claim 18
Dependent Claim
68 words
A semiconductor aevice including a aoped silicon junction having a refractory metal contact disposed thereover, means for inhibiting silicon transport from said doped silicon junction to said refractory metal contact, said means being characterized by a barrier layer, of material selected from the group consisting essentially of refractory metal nitrides, refractory metal borides and refractory metal carbides, interposed between said doped silicon junction and said refractory metal contact.
Claim 19
Dependent Claim
68 words
A semiconductor aevice including a aoped silicon junction having a refractory metal contact disposed thereover, means for inhibiting silicon transport from said doped silicon junction to said refractory metal contact, said means being characterized by a barrier layer, of material selected from the group consisting essentially of refractory metal nitrides, refractory metal borides and refractory metal carbides, interposed between said doped silicon junction and said refractory metal contact.
Claim 20
Dependent Claim
29 words
The device of claim 17 characterized in that saia barrier layer includes a refractory metal selectea from the group consisting essentially of zirconium, titanium, tantalum, tungsten, molybdenum and niobium.
Claim 21
Dependent Claim
95 words
A semiconductor integrated circuit device including a silicon substrate having a predetermined pattern of doped regions formed therein and contact regions disposed on a surface of said device, each contact region exposing at least a portion of an underlying doped region, means for electrically interconnecting saia doped regions, said means being characterized by a system of electrical interconnects, composed of a material which forms a stable thermodynamic couple with silicon and compounds thereof at temperatures exceeding approximately 500°C, which system electrically interconnects said doped regions through said contact regions in accordance with a predetermineu pattern.
Claim 22
Dependent Claim
95 words
A semiconductor integrated circuit device including a silicon substrate having a predetermined pattern of doped regions formed therein and contact regions disposed on a surface of said device, each contact region exposing at least a portion of an underlying doped region, means for electrically interconnecting saia doped regions, said means being characterized by a system of electrical interconnects, composed of a material which forms a stable thermodynamic couple with silicon and compounds thereof at temperatures exceeding approximately 500°C, which system electrically interconnects said doped regions through said contact regions in accordance with a predetermineu pattern.
Claim 23
Dependent Claim
30 words
The device ot claim 19 characterizeu in that saia electrical interconnect material is selected from the group consisting essentially of a metal nitride, a metal boride and a metal carbide.
Claim 24
Dependent Claim
29 words
The device of claim 20 characterized in that said metal comprises a refractory metal selected from the group consisting essentially of hafnium, zirconium, titanium, tantalum, niobium, vanadium and chromium.
Claim 25
Dependent Claim
66 words
The device of claim 19, 20 or 21 characterized by a refractory metal disilicide layer disposed in said contact region between said doped region and said electrical interconnect, said refractory metal selected, as required to form a stable thermodynamic couple with both the underlying doped region and the overlying electrical interconnect, from the group consisting essentially of tungsten, molybaenum, tantalum, niobium, zirconium, titanium, vanadium and chromium.
Claim 26
Independent Claim
53 words
The device of any one of claims 19-22 characterizes by said means comprising: an electrically conductive barrier layer disposed within each contact region over, and electrically contacting, said underlying doped region, saia barrier layer comprising a material which forms a stable thermodynamic couple with silicon and compounds thereof at temperatures exceeding approximately 500°C.
Claim 27
Dependent Claim
30 words
The device of claim 23 characterized in that said barrier layer material is selected from the group consisting essentially of a metal nitride, a metal boride and a metal carbide.
Claim 28
Dependent Claim
31 words
The device of claim 23 or 24 characterized in that said metal comprises a refractory metal selected from the group consisting essentially of hafnium, zirconium, titanium, tantalum, niobium, vanaaium and chromium.
References Cited (Backward Citations)
FR2238249A1
Cited
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