US6027960A
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Laser annealing method and laser annealing device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1996-10-23
•
Granted: 2000-02-22
•
Expires: 2016-10-23
Abstract
Abstract A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously without being exposed to the air. Also, a laser-annealing device includes a cleaning chamber, and a laser irradiation chamber, wherein a substrate to be processed is transported between the cleaning chamber and the laser irradiation chamber without being exposed to the air.
Inventors
- 👤 Naoto Kusumoto
- 👤 Toru Takayama
- 👤 Masato Yonezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:44
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0452; H10P72/0454; H01; H01S; H01S3/00; H01S3/09; H01S3/095; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3806; H10P14/3808; H10P14/3816; H10P70/00; H10P70/20; H10P70/27; H10P72/0468; H10P72/0471; H10D86/00; H10D86/01; H10D86/021; H10D86/0251; Y; Y10; Y10S; Y10S438/00; Y10S438/905; Y10S438/906
Claims Analysis
Total Claims: 131
Claim 1
Independent Claim
60 words
A laser-annealing method comprising the steps of: a first step of cleaning a non-monocrystal semiconductor film formed over a substrate; and a second step of laser-annealing said non-monocrystal semiconductor film in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 2
Dependent Claim
60 words
A laser-annealing method comprising the steps of: a first step of cleaning a non-monocrystal semiconductor film formed over a substrate; and a second step of laser-annealing said non-monocrystal semiconductor film in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein said second step is conducted after an upper surface of said non-monocrystal semiconductor film has been oxidized in the atmosphere containing oxygen therein.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said mixture contains 5% or more of oxygen.
Claim 6
Dependent Claim
16 words
The method of claim 1 wherein said inactive gas has a purity of 99.9% or higher.
Claim 7
Dependent Claim
21 words
The method of claim 1 wherein said laser-annealing is carried out by a XeCl excimer laser or a KrF excimer laser.
Claim 8
Dependent Claim
45 words
The method of claim 1 wherein a table receiving thereover said semiconductor film formed over said substrate is moved in a direction perpendicular to a linear direction of a linear laser beam to scan said semiconductor film formed over said substrate during said second step.
Claim 9
Dependent Claim
13 words
The method of claim 1 wherein said non-monocrystal semiconductor film comprises amorphous silicon.
Claim 10
Dependent Claim
28 words
The method of claim 1 wherein said cleaning step is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
Claim 11
Dependent Claim
106 words
A laser-annealing method comprising the steps of: a first step of cleaning a semiconductor layer formed over a rectangular substrate; a second step of moving a stage receiving said rectangular substrate from one side of said rectangular substrate to another side thereof opposed to said one side to treat said rectangular substrate with a linear laser light from said one side to said another side with said linear laser light being parallel with said one side in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 12
Dependent Claim
106 words
A laser-annealing method comprising the steps of: a first step of cleaning a semiconductor layer formed over a rectangular substrate; a second step of moving a stage receiving said rectangular substrate from one side of said rectangular substrate to another side thereof opposed to said one side to treat said rectangular substrate with a linear laser light from said one side to said another side with said linear laser light being parallel with said one side in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 13
Dependent Claim
21 words
The method of claim 10 wherein said laser light is a XeCl excimer laser light or a KrF excimer laser light.
Claim 14
Dependent Claim
23 words
The method of claim 10 wherein said substrate is heated by a heater disposed within a table on which said stage is disposed.
Claim 15
Dependent Claim
21 words
The method of claim 12 wherein said substrate is kept at a temperature of 100 to 700° C. by said heater.
Claim 16
Dependent Claim
16 words
The method of claim 10 wherein said linear laser light has a width of 0.34 mm.
Claim 17
Dependent Claim
21 words
The method of claim 10 wherein said linear laser light has an energy density of 100 to 500 mJ/cm 2 .
Claim 18
Dependent Claim
22 words
The method of claim 10 wherein a table on which said stage is disposed is moved in one direction at 2.5 mm/s.
Claim 19
Dependent Claim
26 words
The method of claim 10 wherein laser beams of 10 to 50 shots are irradiated on one point of said substrate while said substrate is moved.
Claim 20
Dependent Claim
28 words
The method of claim 10 wherein said cleaning step is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
Claim 21
Dependent Claim
20 words
The method of claim 10 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 22
Dependent Claim
91 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 23
Dependent Claim
91 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 24
Dependent Claim
25 words
The method of claim 20 wherein said semiconductor layer comprises a non-monocrystal silicon, and said non-monocrystal silicon is crystallized by said linear laser beam shots.
Claim 25
Dependent Claim
22 words
The method of claim 20 wherein phosphorus ions are implanted into said semiconductor layer, and activated by said linear laser beam shots.
Claim 26
Dependent Claim
25 words
The method of claim 20 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam shots.
Claim 27
Dependent Claim
28 words
The method of claim 20 wherein said cleaning step is performed by using HF aqueous solution of an aqueous solution containing HF and H 2 O 2 .
Claim 28
Dependent Claim
20 words
The method of claim 20 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 29
Dependent Claim
91 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly crystallize one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 30
Dependent Claim
91 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly crystallize one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 31
Dependent Claim
25 words
The method of claim 26 wherein said semiconductor layer comprise a non-monocrystal silicon, and said non-monocrystal silicon is crystallized by said linear laser beam shots.
Claim 32
Dependent Claim
27 words
The method of claim 26 wherein said one point of said semiconductor layer is overlappingly irradiated with 10 to 50 shots of said linear laser beam shots.
Claim 33
Dependent Claim
25 words
The method of claim 26 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam shots.
Claim 34
Dependent Claim
28 words
The method of claim 26 wherein said cleaning step is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
Claim 35
Dependent Claim
20 words
The method of claim 26 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 36
Dependent Claim
104 words
A laser-annealing method comprising the steps of: crystallizing a semiconductor layer comprising silicon formed over a substrate; cleaning the crystallized semiconductor layer; applying linear laser beam to the crystallized semiconductor layer at an energy density of 100 to 500 mJ/cm 2 to enhance crystallinity of the crystallized semiconductor layer, wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 37
Dependent Claim
104 words
A laser-annealing method comprising the steps of: crystallizing a semiconductor layer comprising silicon formed over a substrate; cleaning the crystallized semiconductor layer; applying linear laser beam to the crystallized semiconductor layer at an energy density of 100 to 500 mJ/cm 2 to enhance crystallinity of the crystallized semiconductor layer, wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 38
Dependent Claim
27 words
The method of claim 32 wherein said one point of said semiconductor layer is overlappingly irradiated with 10 to 50 shots of said linear laser beam shots.
Claim 39
Dependent Claim
25 words
The method of claim 32 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam shots.
Claim 40
Dependent Claim
28 words
The method of claim 32 wherein said cleaning step is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
Claim 41
Dependent Claim
20 words
The method of claim 32 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 42
Dependent Claim
99 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with 10 to 50 shots of said linear laser beam shots in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 43
Dependent Claim
99 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with 10 to 50 shots of said linear laser beam shots in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 44
Dependent Claim
25 words
The method of claim 37 wherein said semiconductor layer comprise a non-monocrystal silicon, and said non-monocrystal silicon is crystallized by said linear laser beam shots.
Claim 45
Dependent Claim
25 words
The method of claim 37 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam shots.
Claim 46
Dependent Claim
28 words
The method of claim 37 wherein said cleaning step is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
Claim 47
Dependent Claim
20 words
The method of claim 37 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 48
Dependent Claim
95 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to a substrate; and moving said substrate with respect to said linear laser beam shots to irradiate 10 to 50 shots of said linear laser beam shots to one point of said substrate when an attention is paid to said one point of said substrate in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 49
Dependent Claim
95 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to a substrate; and moving said substrate with respect to said linear laser beam shots to irradiate 10 to 50 shots of said linear laser beam shots to one point of said substrate when an attention is paid to said one point of said substrate in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 50
Dependent Claim
28 words
The method of claim 42 wherein said cleaning step is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
Claim 51
Dependent Claim
20 words
The method of claim 42 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 52
Dependent Claim
96 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with said linear laser beam shots plural times in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 53
Dependent Claim
96 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with said linear laser beam shots plural times in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 54
Dependent Claim
25 words
The method of claim 45 wherein said semiconductor layer comprise a non-monocrystal silicon, and said non-monocrystal silicon is crystallized by said linear laser beam shots.
Claim 55
Dependent Claim
25 words
The method of claim 45 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam shots.
Claim 56
Dependent Claim
28 words
The method of claim 45 wherein said cleaning step is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
Claim 57
Dependent Claim
20 words
The method of claim 45 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 58
Dependent Claim
64 words
A laser-annealing method comprising the steps of: a first step of cleaning a non-monocrystal semiconductor film formed over a substrate by HF aqueous solution; and a second step of laser-annealing said non-monocrystal semiconductor film in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 59
Dependent Claim
64 words
A laser-annealing method comprising the steps of: a first step of cleaning a non-monocrystal semiconductor film formed over a substrate by HF aqueous solution; and a second step of laser-annealing said non-monocrystal semiconductor film in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 60
Dependent Claim
20 words
The method of claim 50 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 61
Dependent Claim
21 words
The method of claim 50 wherein said laser-annealing is carried out by a XeCl excimer laser or a KrF excimer laser.
Claim 62
Dependent Claim
45 words
The method of claim 50 wherein a table receiving thereover said semiconductor film formed over said substrate is moved in a direction perpendicular to a linear direction of a linear laser beam to scan said semiconductor film formed over said substrate during said second step.
Claim 63
Dependent Claim
13 words
The method of claim 50 wherein said non-monocrystal semiconductor film comprises amorphous silicon.
Claim 64
Dependent Claim
68 words
A laser-annealing method comprising the steps of: a first step of removing a natural oxide film on a surface of a non-monocrystal semiconductor film formed over a substrate; and a second step of laser-annealing said non-monocrystal semiconductor film in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 65
Dependent Claim
68 words
A laser-annealing method comprising the steps of: a first step of removing a natural oxide film on a surface of a non-monocrystal semiconductor film formed over a substrate; and a second step of laser-annealing said non-monocrystal semiconductor film in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 66
Dependent Claim
20 words
The method of claim 55 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 67
Dependent Claim
21 words
The method of claim 55 wherein said laser-annealing is carried out by a XeCl excimer laser or a KrF excimer laser.
Claim 68
Dependent Claim
45 words
The method of claim 55 wherein a table receiving thereover said semiconductor film formed over said substrate is moved in a direction perpendicular to a linear direction of a linear laser beam to scan said semiconductor film formed over said substrate during said second step.
Claim 69
Dependent Claim
13 words
The method of claim 55 wherein said non-monocrystal semiconductor film comprises amorphous silicon.
Claim 70
Dependent Claim
95 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 71
Dependent Claim
95 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 72
Dependent Claim
20 words
The method of claim 60 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 73
Dependent Claim
24 words
The method of claim 60 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 74
Dependent Claim
98 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a non-monocrystal semiconductor film formed over a substrate; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 75
Dependent Claim
98 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a non-monocrystal semiconductor film formed over a substrate; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 76
Dependent Claim
20 words
The method of claim 63 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 77
Dependent Claim
24 words
The method of claim 63 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 78
Dependent Claim
95 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly crystallize one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 79
Dependent Claim
95 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly crystallize one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 80
Dependent Claim
20 words
The method of claim 66 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 81
Dependent Claim
24 words
The method of claim 66 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 82
Dependent Claim
98 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a non-monocrystal semiconductor film formed over a substrate; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly crystallize one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 83
Dependent Claim
98 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a non-monocrystal semiconductor film formed over a substrate; applying linear laser beam to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam to overlappingly crystallize one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 84
Dependent Claim
20 words
The method of claim 69 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 85
Dependent Claim
24 words
The method of claim 69 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 86
Dependent Claim
109 words
A laser-annealing method comprising the steps of: crystallizing a semiconductor layer comprising silicon formed over a substrate; cleaning the crystallized semiconductor layer by J? IF aqueous solution; applying linear laser beam to the crystallized semiconductor layer at an energy density of 100 to 500 mJ/cm 2 to enhance crystaliinity of the crystallized semiconductor layer, wherein said substrate is moved during the application of said linear laser beam to overiappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 87
Dependent Claim
109 words
A laser-annealing method comprising the steps of: crystallizing a semiconductor layer comprising silicon formed over a substrate; cleaning the crystallized semiconductor layer by J? IF aqueous solution; applying linear laser beam to the crystallized semiconductor layer at an energy density of 100 to 500 mJ/cm 2 to enhance crystaliinity of the crystallized semiconductor layer, wherein said substrate is moved during the application of said linear laser beam to overiappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 88
Dependent Claim
20 words
The method of claim 72 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 89
Dependent Claim
24 words
The method of claim 72 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 90
Dependent Claim
112 words
A laser-annealing method comprising the steps of: crystallizing a semiconductor layer comprising silicon formed over a substrate; removing a natural oxide film on a surface of the crystallized semiconductor layer; applying linear laser beam to the crystallized semiconductor layer at an energy density of 100 to 500 mJ/cm 2 to enhance crystaiiinity of the crystallized semiconductor layer, wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 91
Dependent Claim
112 words
A laser-annealing method comprising the steps of: crystallizing a semiconductor layer comprising silicon formed over a substrate; removing a natural oxide film on a surface of the crystallized semiconductor layer; applying linear laser beam to the crystallized semiconductor layer at an energy density of 100 to 500 mJ/cm 2 to enhance crystaiiinity of the crystallized semiconductor layer, wherein said substrate is moved during the application of said linear laser beam to overlappingly irradiate one point of said semiconductor layer with said linear laser beam in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 92
Dependent Claim
20 words
The method of claim 75 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 93
Dependent Claim
24 words
The method of claim 75 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 94
Dependent Claim
101 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm2, wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with 10 to So shots of said linear laser beam shots in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 95
Dependent Claim
101 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm2, wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with 10 to So shots of said linear laser beam shots in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 96
Dependent Claim
20 words
The method of claim 78 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 97
Dependent Claim
24 words
The method of claim 78 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 98
Dependent Claim
107 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with 10 to 50 shots of said linear laser beam shots in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 99
Dependent Claim
107 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with 10 to 50 shots of said linear laser beam shots in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 100
Dependent Claim
20 words
The method of claim 81 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 101
Dependent Claim
24 words
The method of claim 81 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 102
Dependent Claim
99 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam shots to a substrate; and moving said substrate with respect to said linear laser beam shots to irradiate 10 to 50 shots of said linear laser beam shots to one point of said substrate when an attention is paid to said one point of said substrate in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 103
Dependent Claim
99 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam shots to a substrate; and moving said substrate with respect to said linear laser beam shots to irradiate 10 to 50 shots of said linear laser beam shots to one point of said substrate when an attention is paid to said one point of said substrate in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 104
Dependent Claim
20 words
The method of claim 84 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 105
Dependent Claim
24 words
The method of claim 84 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 106
Dependent Claim
103 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to a substrate; and moving said substrate with respect to said linear laser beam shots to irradiate 10 to 50 shots of said linear laser beam shots to one point of said substrate when an attention is paid to said one point of said substrate in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 107
Dependent Claim
103 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to a substrate; and moving said substrate with respect to said linear laser beam shots to irradiate 10 to 50 shots of said linear laser beam shots to one point of said substrate when an attention is paid to said one point of said substrate in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 108
Dependent Claim
20 words
The method of claim 87 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 109
Dependent Claim
24 words
The method of claim 87 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 110
Dependent Claim
100 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with said linear laser beam shots plural times in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 111
Dependent Claim
100 words
A laser-annealing method comprising the steps of: cleaning a semiconductor layer comprising silicon formed over a substrate by HF aqueous solution; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with said linear laser beam shots plural times in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 112
Dependent Claim
20 words
The method of claim 90 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 113
Dependent Claim
24 words
The method of claim 90 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 114
Dependent Claim
104 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with said linear laser beam shots plural times in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 115
Dependent Claim
104 words
A laser-annealing method comprising the steps of: removing a natural oxide film on a surface of a semiconductor layer comprising silicon formed over a substrate; applying linear laser beam shots to said semiconductor layer at an energy density of 100 to 500 mJ/cm 2 , wherein said substrate is moved during the application of said linear laser beam shots to overlappingly irradiate one point of said semiconductor layer with said linear laser beam shots plural times in an atmosphere containing oxygen, wherein said atmosphere containing oxygen is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 116
Dependent Claim
20 words
The method of claim 93 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
Claim 117
Dependent Claim
24 words
The method of claim 93 wherein said semiconductor layer comprises an amorphous silicon, and said amorphous silicon is crystallized by said linear laser beam.
Claim 118
Dependent Claim
110 words
A laser-annealing method comprising the steps of: a first step of cleaning a semiconductor layer formed over a rectangular substrate by HF aqueous solution; a second step of moving a stage receiving said rectangular substrate from one side of said rectangular substrate to another side thereof opposed to said one side to treat said rectangular substrate with a linear laser light from said one side to said another side with said linear laser light being parallel with said one side in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 119
Dependent Claim
110 words
A laser-annealing method comprising the steps of: a first step of cleaning a semiconductor layer formed over a rectangular substrate by HF aqueous solution; a second step of moving a stage receiving said rectangular substrate from one side of said rectangular substrate to another side thereof opposed to said one side to treat said rectangular substrate with a linear laser light from said one side to said another side with said linear laser light being parallel with said one side in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 120
Dependent Claim
22 words
The method of claim 96 wherein said linear laser light is a XeCl excimer laser light or a KrF excimer laser light.
Claim 121
Dependent Claim
23 words
The method of claim 96 wherein said substrate is heated by a heater disposed within a table on which said stage is disposed.
Claim 122
Dependent Claim
21 words
The method of claim 98 wherein said substrate is kept at a temperature of 100 to 700° C. by said heater.
Claim 123
Dependent Claim
19 words
The method of claim 96 wherein said linear laser light has an energy density of 100 to 500 mJ/cm2.
Claim 124
Dependent Claim
26 words
The method of claim 100 wherein laser beams of 10 to 50 shots are irradiated on one point of said substrate while said substrate is moved.
Claim 125
Dependent Claim
114 words
A laser-annealing method comprising the steps of: a first step of removing a natural oxide film on a surface of a semiconductor layer formed over a rectangular substrate; a second step of moving a stage receiving said rectangular substrate from one side of said rectangular substrate to another side thereof opposed to said one side to treat said rectangular substrate with a linear laser light from said one side to said another side with said linear laser light being parallel with said one side in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 126
Dependent Claim
114 words
A laser-annealing method comprising the steps of: a first step of removing a natural oxide film on a surface of a semiconductor layer formed over a rectangular substrate; a second step of moving a stage receiving said rectangular substrate from one side of said rectangular substrate to another side thereof opposed to said one side to treat said rectangular substrate with a linear laser light from said one side to said another side with said linear laser light being parallel with said one side in an atmosphere containing oxygen therein, wherein said atmosphere containing oxygen therein is selected from the group consisting of oxygen only, and a mixture of oxygen and an inactive gas.
Claim 127
Dependent Claim
22 words
The method of claim 102 wherein said linear laser light is a XeCl excimer laser light or a KrF excimer laser light.
Claim 128
Dependent Claim
23 words
The method of claim 102 wherein said substrate is heated by a heater disposed within a table on which said stage is disposed.
Claim 129
Dependent Claim
21 words
The method of claim 104 wherein said substrate is kept at a temperature of 100 to 700° C. by said heater.
Claim 130
Dependent Claim
21 words
The method of claim 102 wherein said linear laser light has an energy density of 100 to 500 mJ/cm 2 .
Claim 131
Dependent Claim
21 words
The method of claim 102 wherein laser beams of 10 to 50 shots are irradiated on one point of said substrate.
References Cited (Backward Citations)
US4292093A
Cited
US5593497A
Cited
US5024968A
Cited
US5424244A
Cited
US5529630A
Cited
US5843225A
Cited
US5843833A
Cited
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