US6156638A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuitry and method of restricting diffusion from one material to another
Assignee: Micron Technology Inc
•
Filing: 1998-04-10
•
Granted: 2000-12-05
•
Expires: 2018-04-10
Abstract
Abstract The invention includes methods of restricting diffusion between materials. First and second different materials which are separated by a barrier layer capable of restricting diffusion of material between the first and second materials are provided. The barrier layer is formed by forming a first layer of a third material over the first material. A second layer of the third material is formed on the first layer. The second material is formed over the second layer of the third material. In another aspect, the invention relates to diffusion barrier layers. In one implementation, such a layer comprises a composite of two immediately juxtaposed and contacting, yet discrete, layers of the same material. In another aspect, the invention relates to integrated circuitry. In one implementation, a semiconductive substrate has a conductive diffusion region formed therein. An insulative dielectric layer is received over the substrate and has a conductive contact formed therein which is in electrical connection with the diffusion region. The conductive contact comprises a conductive barrier layer proximate the diffusion region. The conductive barrier layer comprises a composite of two immediately juxtaposed and contacting, yet discrete, layers of the same conductive material.
Inventors
- 👤 Vishnu K. Agarwal
- 👤 Garo J. Derderian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/052; H10W20/0526; H10W20/40
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
170 words
A method of forming a conductive contact comprising: depositing an insulative material over a semiconductive substrate and forming a contact opening therethrough; depositing a conductive diffusion barrier layer material within the contact opening over the semiconductive substrate and to be amorphous as deposited; annealing the amorphous diffusion barrier layer material at a temperature of at least 300° C. for a time period sufficient to achieve a selected crystalline structure; after the annealing, depositing the same conductive diffusion barrier layer material within the contact opening on the crystalline conductive barrier layer material, said same conductive diffusion barrier layer material being amorphous as deposited; and depositing a conductive plugging material different from the conductive diffusion barrier layer material within the contact opening effective to form a conductive contact to semiconductive material of the semiconductive substrate, said same conductive diffusion barrier layer material not being exposed to a temperature of 500° C. or greater before forming said conductive plugging material, said same conductive diffusion barrier layer material remaining amorphous in its final composition.
Claim 2
Independent Claim
170 words
A method of forming a conductive contact comprising: depositing an insulative material over a semiconductive substrate and forming a contact opening therethrough; depositing a conductive diffusion barrier layer material within the contact opening over the semiconductive substrate and to be amorphous as deposited; annealing the amorphous diffusion barrier layer material at a temperature of at least 300° C. for a time period sufficient to achieve a selected crystalline structure; after the annealing, depositing the same conductive diffusion barrier layer material within the contact opening on the crystalline conductive barrier layer material, said same conductive diffusion barrier layer material being amorphous as deposited; and depositing a conductive plugging material different from the conductive diffusion barrier layer material within the contact opening effective to form a conductive contact to semiconductive material of the semiconductive substrate, said same conductive diffusion barrier layer material not being exposed to a temperature of 500° C. or greater before forming said conductive plugging material, said same conductive diffusion barrier layer material remaining amorphous in its final composition.
Claim 3
Dependent Claim
57 words
The method of claim 1 wherein the same material is selected from the group consisting of TiN, WN, TaN, Ta, W x Si y N z , Ti x Si y N z , Ta x Si y N z , Ti x Al y N z , Ta x Al y N z and mixtures thereof.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein the same material comprises TiN.
Claim 5
Dependent Claim
11 words
The method of claim 1 wherein the same material comprises WN.
Claim 6
Dependent Claim
11 words
The method of claim 1 wherein the same material comprises TaN.
Claim 7
Dependent Claim
11 words
The method of claim 1 wherein the same material comprises Ta.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein the same material comprises W x Si y N z .
Claim 9
Independent Claim
16 words
The method of claim 1wherein the same material comprises Ti x Si y N z .
Claim 10
Dependent Claim
17 words
The method of claim 1 wherein the same mater comprises Ta x Si y N z .
Claim 11
Dependent Claim
17 words
The method of claim 1 wherein the same material comprises Ti x Al y N z .
Claim 12
Dependent Claim
17 words
The method of claim 1 wherein the same material comprises Ta x Al y N z .
Claim 13
Dependent Claim
19 words
The method of claim 1 wherein the semiconductive material comprises a conductive diffusion region formed within the semiconductive substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-05 | 2004-06-05 | 2004-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-05 | 2008-06-05 | 2008-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-05 | 2012-06-05 | 2012-12-05 | $7700.00 | Window Closed / Lapsed |