US5962871A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1996-11-05
•
Granted: 1999-10-05
•
Expires: 2016-11-05
Abstract
Abstract A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.
Inventors
- 👤 Hongyong Zhang
- 👤 Toru Takayama
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 01:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D62/00; H10D62/40; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; H10P14/3822
Claims Analysis
Total Claims: 46
Claim 1
Independent Claim
121 words
A thin-film transistor comprising: a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material; source and drain regions formed in said semiconductor layer; a channel region positioned between said source and drain regions, said channel region being free from a portion where said catalytic material is added; a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, and wherein said direction in which said crystals extend through the channel region is at a fixed angle with a direction in which carriers of said transistor flows.
Claim 2
Dependent Claim
121 words
A thin-film transistor comprising: a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material; source and drain regions formed in said semiconductor layer; a channel region positioned between said source and drain regions, said channel region being free from a portion where said catalytic material is added; a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, and wherein said direction in which said crystals extend through the channel region is at a fixed angle with a direction in which carriers of said transistor flows.
Claim 3
Dependent Claim
22 words
The transistor of claim 1 wherein resistance against movement of the carriers in the thin film transistor depends on said fixed angle.
Claim 4
Dependent Claim
17 words
The transistor of claim 1 wherein at least one of said two insulating layers comprises silicon oxide.
Claim 5
Dependent Claim
19 words
The transistor of claim 1 wherein a concentration of said catalytic material is 1×10 19 atoms/cm 3 or lower.
Claim 6
Dependent Claim
140 words
A thin-film transistor comprising: a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material; source and drain regions formed in said semiconductor layer; a channel region positioned between said source and drain regions, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating films interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, wherein said direction in which said crystals extend through the channel region is at a fixed angle with a direction in which carriers of said transistor flows, and wherein a concentration of said catalytic material in said semiconductor layer is 1×10 19 atoms/cm 3 or lower.
Claim 7
Dependent Claim
140 words
A thin-film transistor comprising: a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material; source and drain regions formed in said semiconductor layer; a channel region positioned between said source and drain regions, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating films interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, wherein said direction in which said crystals extend through the channel region is at a fixed angle with a direction in which carriers of said transistor flows, and wherein a concentration of said catalytic material in said semiconductor layer is 1×10 19 atoms/cm 3 or lower.
Claim 8
Dependent Claim
22 words
The transistor of claim 5 wherein resistance against movement of the carriers in the thin film transistor depends on said fixed angle.
Claim 9
Dependent Claim
17 words
The transistor of claim 5 wherein at least one of said two insulating layers comprises silicon oxide.
Claim 10
Dependent Claim
25 words
The transistor of claim 5 wherein each edge of said source and drain regions is substantially aligned with each outer edge of said gate electrode.
Claim 11
Dependent Claim
153 words
A CMOS transistor including a p-channel type thin film transistor and a n-channel type thin film transistor connected with each other comprising; a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material; a pair of active regions formed in said semiconductor layer; source and drain regions formed in each of said active regions, a channel region positioned between said source and drain regions, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, and wherein said one direction in which said crystals extend through the channel region is at a fixed angle with a direction in which carriers of said transistor flows.
Claim 12
Dependent Claim
153 words
A CMOS transistor including a p-channel type thin film transistor and a n-channel type thin film transistor connected with each other comprising; a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material; a pair of active regions formed in said semiconductor layer; source and drain regions formed in each of said active regions, a channel region positioned between said source and drain regions, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, and wherein said one direction in which said crystals extend through the channel region is at a fixed angle with a direction in which carriers of said transistor flows.
Claim 13
Dependent Claim
22 words
The transistor of claim 9 wherein resistance against movement of the carriers in the thin film transistor depends on said fixed angle.
Claim 14
Dependent Claim
17 words
The transistor of claim 9 wherein at least one of said two insulating layers comprises silicon oxide.
Claim 15
Dependent Claim
19 words
The transistor of claim 9 wherein a concentration of said catalytic material is 1×10 19 atoms/cm 3 or lower.
Claim 16
Dependent Claim
178 words
A CMOS transistor including a p-channel type thin film transistor and a n-channel type thin film transistor connected with each other comprising; a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material; a pair of active regions formed in said semiconductor layer; source and drain regions formed in each of said active regions; a channel region positioned between said source and drain regions, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein each inner edge of said source and drain regions in said active region is substantially aligned with each outer edge of said gate electrode, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, and wherein said one direction in which said crystals extend through the channel region is at a fixed angle with a direction in which carriers of said transistor flows.
Claim 17
Dependent Claim
178 words
A CMOS transistor including a p-channel type thin film transistor and a n-channel type thin film transistor connected with each other comprising; a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material; a pair of active regions formed in said semiconductor layer; source and drain regions formed in each of said active regions; a channel region positioned between said source and drain regions, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein each inner edge of said source and drain regions in said active region is substantially aligned with each outer edge of said gate electrode, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, and wherein said one direction in which said crystals extend through the channel region is at a fixed angle with a direction in which carriers of said transistor flows.
Claim 18
Dependent Claim
22 words
The transistor of claim 13 wherein resistance against movement of the carriers in the thin film transistor depends on said fixed angle.
Claim 19
Dependent Claim
17 words
The transistor of claim 13 wherein at least one of said two insulating layers comprises silicon oxide.
Claim 20
Dependent Claim
19 words
The transistor of claim 13 wherein a concentration of said catalytic material is 1×10 19 atoms/cm 3 or lower.
Claim 21
Dependent Claim
143 words
A semiconductor device comprising: an active layer formed from a semiconductor film, said active layer comprising at least source, drain and channel regions and disposed between two insulating layers, said semiconductor layer containing a catalytic material which is capable of promoting crystallization of said semiconductor layer; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers and is free from a portion where said catalytic material is added, wherein said one direction of said crystals extending is at a fixed angle with a direction in which carriers flow through said channel region, and wherein a concentration of said catalytic material in said semiconductor layer is 1×10 19 atoms/cm 3 or lower.
Claim 22
Dependent Claim
143 words
A semiconductor device comprising: an active layer formed from a semiconductor film, said active layer comprising at least source, drain and channel regions and disposed between two insulating layers, said semiconductor layer containing a catalytic material which is capable of promoting crystallization of said semiconductor layer; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers and is free from a portion where said catalytic material is added, wherein said one direction of said crystals extending is at a fixed angle with a direction in which carriers flow through said channel region, and wherein a concentration of said catalytic material in said semiconductor layer is 1×10 19 atoms/cm 3 or lower.
Claim 23
Dependent Claim
22 words
The device of claim 17 wherein said catalytic material is selected from the group consisting of Ni, Fe, Co, Pd and Pt.
Claim 24
Dependent Claim
17 words
The device of claim 17 wherein at least one of said two insulating layers comprises silicon oxide.
Claim 25
Dependent Claim
17 words
The device of claim 17 wherein said semiconductor layer is formed by laser crystallization after thermal crystallization.
Claim 26
Dependent Claim
147 words
A thin-film transistor comprising: an active layer formed from a semiconductor film and disposed between two insulating layers, said semiconductor film containing a catalytic material; source and drain regions formed in said active layer; a channel region positioned between said source and drain regions in said active layer, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, wherein said one direction of said crystals extending is at a fixed angle with a direction in which carriers flow through said channel region, and wherein a concentration of said catalytic material in said active layer is 1×10 19 atoms/cm 3 or lower.
Claim 27
Dependent Claim
147 words
A thin-film transistor comprising: an active layer formed from a semiconductor film and disposed between two insulating layers, said semiconductor film containing a catalytic material; source and drain regions formed in said active layer; a channel region positioned between said source and drain regions in said active layer, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, wherein said one direction of said crystals extending is at a fixed angle with a direction in which carriers flow through said channel region, and wherein a concentration of said catalytic material in said active layer is 1×10 19 atoms/cm 3 or lower.
Claim 28
Dependent Claim
116 words
A semiconductor device comprising: a crystalline semiconductor film formed between two insulating layers, said crystalline semiconductor film including at least source, drain and channel regions therein and having crystals extending in one direction parallel to said two insulating layers; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said one direction in which said crystals extend is at a fixed angle with a direction linking between said source and drain regions of said semiconductor, and wherein said semiconductor film contains a catalytic material for promoting crystallization of said semiconductor film and said channel region is free from a portion where said catalytic material is added.
Claim 29
Dependent Claim
116 words
A semiconductor device comprising: a crystalline semiconductor film formed between two insulating layers, said crystalline semiconductor film including at least source, drain and channel regions therein and having crystals extending in one direction parallel to said two insulating layers; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said one direction in which said crystals extend is at a fixed angle with a direction linking between said source and drain regions of said semiconductor, and wherein said semiconductor film contains a catalytic material for promoting crystallization of said semiconductor film and said channel region is free from a portion where said catalytic material is added.
Claim 30
Dependent Claim
12 words
A device according to claim 22 wherein said semiconductor film is intrinsic.
Claim 31
Dependent Claim
23 words
A device according to claim 22 wherein said catalytic material is selected from the group consisting of Ni, Fe, Co, Pd and Pt.
Claim 32
Dependent Claim
20 words
A device according to claim 24 wherein a concentration of said catalytic material is 1×10 19 atoms/cm 3 or lower.
Claim 33
Dependent Claim
31 words
A device according to claim 22 wherein each inner edge of said source and drain regions in said semiconductor film is substantially aligned with each outer edge of said gate electrode.
Claim 34
Dependent Claim
148 words
semiconductor device comprising: an active layer formed from a semiconductor film, said semiconductor film disposed between two insulating layers and containing a catalytic material which is capable of promoting crystallization of a semiconductor film, and at least source, drain and a channel regions provided in said active layer, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said active layer comprises a plurality of crystals extending substantially in one direction parallel to said two insulating layers, wherein said one direction in which said crystals extend is at a fixed angle with a direction linking between said source and drain regions in said active layer, and wherein a concentration of said catalytic material in said active layer is 1×10 19 atoms/cm 3 or lower.
Claim 35
Dependent Claim
148 words
semiconductor device comprising: an active layer formed from a semiconductor film, said semiconductor film disposed between two insulating layers and containing a catalytic material which is capable of promoting crystallization of a semiconductor film, and at least source, drain and a channel regions provided in said active layer, said channel region being free from a portion where said catalytic material is added; and a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween, wherein said active layer comprises a plurality of crystals extending substantially in one direction parallel to said two insulating layers, wherein said one direction in which said crystals extend is at a fixed angle with a direction linking between said source and drain regions in said active layer, and wherein a concentration of said catalytic material in said active layer is 1×10 19 atoms/cm 3 or lower.
Claim 36
Dependent Claim
12 words
A device according to claim 27 wherein said semiconductor film is intrinsic.
Claim 37
Dependent Claim
23 words
A device according to claim 27 wherein said catalytic material is selected from the group consisting of Ni, Fe, Co, Pd and Pt.
Claim 38
Dependent Claim
12 words
A transistor according to claim 1 wherein said semiconductor layer is intrinsic.
Claim 39
Dependent Claim
12 words
A transistor according to claim 5 wherein said semiconductor layer is intrinsic.
Claim 40
Dependent Claim
12 words
A transistor according to claim 9 wherein said semiconductor layer is intrinsic.
Claim 41
Dependent Claim
12 words
A transistor according to claim 13 wherein said semiconductor layer is intrinsic.
Claim 42
Dependent Claim
23 words
A device according to claim 1 wherein said catalytic material is selected from the group consisting of Ni, Fe, Co, Pd and Pt.
Claim 43
Dependent Claim
23 words
A device according to claim 5 wherein said catalytic material is selected from the group consisting of Ni, Fe, Co, Pd and Pt.
Claim 44
Dependent Claim
23 words
A device according to claim 9 wherein said catalytic material is selected from the group consisting of Ni, Fe, Co, Pd and Pt.
Claim 45
Dependent Claim
23 words
A device according to claim 13 wherein said catalytic material is selected from the group consisting of Ni, Fe, Co, Pd and Pt.
Claim 46
Dependent Claim
23 words
A device according to claim 21 wherein said catalytic material is selected from the group consisting of Ni, Fe, Co, Pd and Pt.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-04 | 2003-04-05 | 2003-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-04 | 2007-04-05 | 2007-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-04 | 2011-04-05 | 2011-10-05 | $7700.00 | Window Closed / Lapsed |