US5585291A
Expired / Lapsed
US
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Method for manufacturing a semiconductor device containing a crystallization promoting material
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-11-29
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Granted: 1996-12-17
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Expires: 2014-11-29
Abstract
Abstract A method for manufacturing a semiconductor device having a crystalline silicon semiconductor layer comprises the steps of heat crystallizing an amorphous silicon semiconductor layer at a relatively low temperature because of the use of a crystallization promoting material such as Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, P, As, and Sb. The crystallization promoting material is introduced by mixing it within a liquid precursor material for forming silicon oxide and coating the precursor material onto the amorphous silicon film. Thus, it is possible to add the crystallization promoting material into the amorphous silicon film at a minimum density.
Inventors
- 👤 Hisashi Ohtani
- 👤 Akiharu Miyanaga
- 👤 Junichi Takeyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 00:00
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3808; H10P14/3816; Y; Y10; Y10S; Y10S148/00; Y10S148/016; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
90 words
A method for manufacturing a semiconductor device on a substrate comprising the steps of: disposing in contact with a semiconductor layer comprising silicon a precursor material for forming silicon oxide, wherein the precursor material includes a metal or a metal compound capable of promoting a crystallization of said semiconductor layer; prebaking said substrate in order to form a film comprising silicon oxide from the precursor material; diffusing said metal or metal compound into said semiconductor film by heating; and annealing said semiconductor layer in order to crystallize said semiconductor layer.
Claim 2
Independent Claim
90 words
A method for manufacturing a semiconductor device on a substrate comprising the steps of: disposing in contact with a semiconductor layer comprising silicon a precursor material for forming silicon oxide, wherein the precursor material includes a metal or a metal compound capable of promoting a crystallization of said semiconductor layer; prebaking said substrate in order to form a film comprising silicon oxide from the precursor material; diffusing said metal or metal compound into said semiconductor film by heating; and annealing said semiconductor layer in order to crystallize said semiconductor layer.
Claim 3
Dependent Claim
28 words
The method of claim 1 wherein said metal is selected from the group consisting of Pd, Pt, Cu, Ag, Au, In, Sn, Pb, P, As, Sb and Ni.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein said semiconductor layer is amorphous.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said film is disposed between said substrate and said semiconductor layer.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein said annealing is performed at a temperature not higher than 500° C.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein said film is formed on said semiconductor film.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein said film mainly comprises silicon oxide.
Claim 9
Independent Claim
91 words
A method for manufacturing a semiconductor device on a substrate comprising the steps of: disposing in contact with a semiconductor layer comprising silicon a precursor material for forming silicon oxide, wherein the precursor material includes a metal or a metal compound capable of promoting a crystallization of said semiconductor layer; prebaking said substrate in order to form a film comprising silicon oxide from the precursor material; and annealing said semiconductor layer in order to crystallize said semiconductor layer, wherein said metal or metal compound diffuses into said semiconductor film during crystallization.
Claim 10
Independent Claim
91 words
A method for manufacturing a semiconductor device on a substrate comprising the steps of: disposing in contact with a semiconductor layer comprising silicon a precursor material for forming silicon oxide, wherein the precursor material includes a metal or a metal compound capable of promoting a crystallization of said semiconductor layer; prebaking said substrate in order to form a film comprising silicon oxide from the precursor material; and annealing said semiconductor layer in order to crystallize said semiconductor layer, wherein said metal or metal compound diffuses into said semiconductor film during crystallization.
Claim 11
Dependent Claim
28 words
The method of claim 8 wherein said metal is selected from the group consisting of Pd, Pt, Cu, Ag, Au, In, Sn, Pb, P, As, Sb and Ni.
Claim 12
Dependent Claim
11 words
The method of claim 8 wherein said semiconductor layer is amorphous.
Claim 13
Dependent Claim
17 words
The method of claim 8 wherein said film is disposed between said substrate and said semiconductor layer.
Claim 14
Dependent Claim
18 words
The method of claim 8 wherein said annealing is performed at a temperature not higher than 500° C.
Claim 15
Dependent Claim
14 words
The method of claim 8 wherein said film is formed on said semiconductor film.
Claim 16
Independent Claim
96 words
A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer comprising silicon on a substrate; coating said semiconductor layer with a liquid precursor material for forming silicon oxide, wherein said liquid precursor material is added with a metal or a metal compound capable of promoting a crystallization of said semiconductor layer; prebaking said substrate in order to form a film comprising silicon oxide from said liquid precursor; annealing said semiconductor layer in order to crystallize said semiconductor layer, wherein said metal or metal compound diffuses through said semiconductor film during crystallization.
Claim 17
Independent Claim
96 words
A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer comprising silicon on a substrate; coating said semiconductor layer with a liquid precursor material for forming silicon oxide, wherein said liquid precursor material is added with a metal or a metal compound capable of promoting a crystallization of said semiconductor layer; prebaking said substrate in order to form a film comprising silicon oxide from said liquid precursor; annealing said semiconductor layer in order to crystallize said semiconductor layer, wherein said metal or metal compound diffuses through said semiconductor film during crystallization.
Claim 18
Dependent Claim
14 words
The method of claim 14 wherein said liquid precursor material comprises an organic solvent.
Claim 19
Dependent Claim
19 words
The method of claim 14 wherein said liquid precursor material is coated on said semiconductor layer by spin coating.
Claim 20
Dependent Claim
23 words
The method of claim 14 further comprising the step of increasing a crystallinity of said semiconductor layer by irradiating light after said annealing.
Claim 21
Independent Claim
133 words
A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer comprising silicon on a substrate, said semiconductor layer having at least a first region and a second region adjacent to each other; forming a precursor material for forming silicon oxide, wherein the precursor material includes a catalyst for promoting a crystallization of said semiconductor layer on only the first region of said semiconductor layer; prebaking said substrate in order to form a film comprising silicon oxide from the precursor material; diffusing said catalyst into the first region of said semiconductor layer; and heating said semiconductor layer so that said catalyst diffuses from the first region of said semiconductor layer into the second region of said semiconductor layer adjacent thereto, thereby, crystallizing said second region of the semiconductor layer.
Claim 22
Independent Claim
133 words
A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer comprising silicon on a substrate, said semiconductor layer having at least a first region and a second region adjacent to each other; forming a precursor material for forming silicon oxide, wherein the precursor material includes a catalyst for promoting a crystallization of said semiconductor layer on only the first region of said semiconductor layer; prebaking said substrate in order to form a film comprising silicon oxide from the precursor material; diffusing said catalyst into the first region of said semiconductor layer; and heating said semiconductor layer so that said catalyst diffuses from the first region of said semiconductor layer into the second region of said semiconductor layer adjacent thereto, thereby, crystallizing said second region of the semiconductor layer.
Claim 23
Dependent Claim
12 words
The method of claim 18 wherein said film mainly comprises silicon oxide.
Claim 24
Dependent Claim
23 words
The method of claim 18 wherein crystals grow in said second region in a direction substantially parallel with a surface of said substrate.
Claim 25
Dependent Claim
31 words
The method of claim 18 further comprising the step of removing said first region after the crystallization thereof to remain an active region of said semiconductor device within said second region.
Claim 26
Independent Claim
122 words
A method for manufacturing a semiconductor device comprising the steps of: preparing a liquid precursor material for forming silicon oxide, wherein said precursor material is added with a metal or a metal compound capable of promoting a crystallization of silicon; forming a semiconductor film comprising silicon on a substrate; coating said precursor material onto said semiconductor film; prebaking said substrate to form a silicon oxide film containing said metal or metal compound on said semiconductor film; patterning said silicon oxide film so that only a selected region of said semiconductor layer is provided said silicon oxide film; and heating said semiconductor layer to crystallize said semiconductor layer, wherein said metal or metal compound is diffused into said semiconductor layer during said heating.
Claim 27
Independent Claim
122 words
A method for manufacturing a semiconductor device comprising the steps of: preparing a liquid precursor material for forming silicon oxide, wherein said precursor material is added with a metal or a metal compound capable of promoting a crystallization of silicon; forming a semiconductor film comprising silicon on a substrate; coating said precursor material onto said semiconductor film; prebaking said substrate to form a silicon oxide film containing said metal or metal compound on said semiconductor film; patterning said silicon oxide film so that only a selected region of said semiconductor layer is provided said silicon oxide film; and heating said semiconductor layer to crystallize said semiconductor layer, wherein said metal or metal compound is diffused into said semiconductor layer during said heating.
Claim 28
Dependent Claim
30 words
The method of claim 22 wherein said prebaking is carried out at such a low temperature that said metal or metal compound does not substantially diffuse into said semiconductor layer.
Claim 29
Dependent Claim
24 words
The method of claim 22 further comprising the step of irradiating said semiconductor layer with light to increase a crystallinity thereof after said heating.
Claim 30
Independent Claim
127 words
A method for manufacturing of semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; oxidizing a surface of said semiconductor film to form an oxide film on said semiconductor film; applying a precursor material for forming silicon oxide, wherein the precursor material includes a metal or metal compound onto said oxide film, said metal or metal compound being capable of promoting a crystallization of said semiconductor film; prebaking said substrate in order to form a film comprising silicon oxide from the precursor material; diffusing said metal or metal compound into said semiconductor film through said oxide film, wherein said oxide film is sufficiently thin to allow said metal or metal compound to penetrate therethrough; and crystallizing said semiconductor film by heating.
Claim 31
Independent Claim
127 words
A method for manufacturing of semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; oxidizing a surface of said semiconductor film to form an oxide film on said semiconductor film; applying a precursor material for forming silicon oxide, wherein the precursor material includes a metal or metal compound onto said oxide film, said metal or metal compound being capable of promoting a crystallization of said semiconductor film; prebaking said substrate in order to form a film comprising silicon oxide from the precursor material; diffusing said metal or metal compound into said semiconductor film through said oxide film, wherein said oxide film is sufficiently thin to allow said metal or metal compound to penetrate therethrough; and crystallizing said semiconductor film by heating.
Claim 32
Dependent Claim
14 words
The method of claim 25 wherein said oxide film is formed by thermal oxidation.
Claim 33
Dependent Claim
16 words
The method of claim 25 wherein said oxide film is formed by ultraviolet photo enhanced oxidation.
Claim 34
Dependent Claim
24 words
The method of claim 25 wherein said oxide film is formed by exposing a surface of said semiconductor film to a hydrogen peroxide solution.
Claim 35
Dependent Claim
25 words
The method of claim 28 wherein said hydrogen peroxide solution includes a material selected from the group consisting of ammonium, sulfuric acid, and hydrochloric acid.
Claim 36
Independent Claim
102 words
A method for manufacturing a semiconductor device on a substrate comprising the steps of: disposing, in contact with a semiconductor layer comprising silicon, a solution in which at least a silicon compound is dissolved in an organic solvent, wherein the solution includes a metal or a metal compound for promoting a crystallization of the semiconductor layer; prebaking the substrate in order to form a film comprising silicon oxide from the solution comprising the metal or metal compound; and annealing the semiconductor layer in order to crystallize the semiconductor layer, wherein the metal or metal compound diffuses into the semiconductor film during crystallization.
Claim 37
Independent Claim
102 words
A method for manufacturing a semiconductor device on a substrate comprising the steps of: disposing, in contact with a semiconductor layer comprising silicon, a solution in which at least a silicon compound is dissolved in an organic solvent, wherein the solution includes a metal or a metal compound for promoting a crystallization of the semiconductor layer; prebaking the substrate in order to form a film comprising silicon oxide from the solution comprising the metal or metal compound; and annealing the semiconductor layer in order to crystallize the semiconductor layer, wherein the metal or metal compound diffuses into the semiconductor film during crystallization.
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USPTO Annuity & Maintenance Windows
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| 3.5 Years (Year 4) | 1999-12-17 | 2000-06-17 | 2000-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-17 | 2004-06-17 | 2004-12-17 | $3760.00 | Window Closed / Lapsed |
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