US5700333A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin-film photoelectric conversion device and a method of manufacturing the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1996-03-27
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Granted: 1997-12-23
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Expires: 2016-03-27
Abstract
Abstract A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting the amorphous silicon film to a heat treatment to obtain a crystalline silicon film; depositing a silicon film to which phosphorus has been added in contact with the crystalline silicon film; and subjecting the crystalline silicon film and the silicon film to which phosphorus has been added to a heat treatment to getter the metal element from the crystalline film.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuyuki Arai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:17
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; H10F10/00; H10F10/10; H10F10/14; H10F10/146; H10F71/128; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
92 words
A method of manufacturing a photoelectric conversion device, comprising the steps of: disposing a metal containing layer in contact with an upper or lower surface of a non-single crystalline silicon semiconductor layer; crystallizing said non-single crystalline silicon semiconductor layer by heating, wherein said metal functions to promote the crystallization; forming a gettering layer on or a gettering region within said semiconductor layer after said crystallizing, said gettering layer containing phosphorus; and heating said semiconductor layer and said gettering layer or region in order to getter said metal contained in said semiconductor layer.
Claim 2
Independent Claim
92 words
A method of manufacturing a photoelectric conversion device, comprising the steps of: disposing a metal containing layer in contact with an upper or lower surface of a non-single crystalline silicon semiconductor layer; crystallizing said non-single crystalline silicon semiconductor layer by heating, wherein said metal functions to promote the crystallization; forming a gettering layer on or a gettering region within said semiconductor layer after said crystallizing, said gettering layer containing phosphorus; and heating said semiconductor layer and said gettering layer or region in order to getter said metal contained in said semiconductor layer.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein said metal is selected from the group consisting of Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said photoelectric conversion device is a solar cell.
Claim 5
Independent Claim
93 words
A method of manufacturing a photoelectric conversion device, comprising: disposing a metal containing layer in contact with a non-single crystalline silicon semiconductor layer, said metal being a catalyst that promotes crystallization of said silicon semiconductor layer; crystallizing said silicon semiconductor layer by a heating treatment wherein said metal functions to promote said crystallization; forming a phosphorus doped silicon gettering layer on said semiconductor layer after said crystallizing; and heating said phosphorus doped silicon layer and said semiconductor layer to activate said phosphorus for gettering said catalyst metal contained in said crystallized semiconductor layer.
Claim 6
Independent Claim
93 words
A method of manufacturing a photoelectric conversion device, comprising: disposing a metal containing layer in contact with a non-single crystalline silicon semiconductor layer, said metal being a catalyst that promotes crystallization of said silicon semiconductor layer; crystallizing said silicon semiconductor layer by a heating treatment wherein said metal functions to promote said crystallization; forming a phosphorus doped silicon gettering layer on said semiconductor layer after said crystallizing; and heating said phosphorus doped silicon layer and said semiconductor layer to activate said phosphorus for gettering said catalyst metal contained in said crystallized semiconductor layer.
Claim 7
Dependent Claim
36 words
The method of claim 4 wherein said non-single crystalline silicon semiconductor layer is formed on a substrate having an electrode thereon and said metal containing layer is formed on an upper surface of said semiconductor layer.
Claim 8
Dependent Claim
22 words
The method of claim 4 wherein said phosphorus doped silicon layer contains phosphorus in a concentration of 0.1 to 10 wt %.
Claim 9
Dependent Claim
44 words
The method of claim 4 further comprising a step of etching the surface of said crystallized semiconductor layer after the step of heating said phosphorus doped silicon layer and said semiconductor layer in order to make the surface of said crystallized semiconductor layer uneven.
Claim 10
Dependent Claim
14 words
The method of claim 4 wherein said photoelectric conversion device is a solar cell.
Claim 11
Independent Claim
88 words
A method of manufacturing a photoelectric conversion device, comprising: disposing a metal containing layer in contact with a non-single crystalline silicon semiconductor layer, said metal being a catalyst that promotes crystallization of said silicon semiconductor layer; crystallizing said semiconductor layer by a heating treatment wherein said metal functions to promote said crystallization thereof; introducing phosphorus ions into a surface of said semiconductor layer after said crystallizing; and subsequentially heating said semiconductor layer to activate said phosphorus ions for gettering said catalyst metal contained in said crystallized semiconductor layer.
Claim 12
Independent Claim
88 words
A method of manufacturing a photoelectric conversion device, comprising: disposing a metal containing layer in contact with a non-single crystalline silicon semiconductor layer, said metal being a catalyst that promotes crystallization of said silicon semiconductor layer; crystallizing said semiconductor layer by a heating treatment wherein said metal functions to promote said crystallization thereof; introducing phosphorus ions into a surface of said semiconductor layer after said crystallizing; and subsequentially heating said semiconductor layer to activate said phosphorus ions for gettering said catalyst metal contained in said crystallized semiconductor layer.
Claim 13
Dependent Claim
36 words
The method of claim 9 wherein said non-single crystalline silicon semiconductor layer is formed on a substrate having an electrode thereon and said metal containing layer is formed on an upper surface of said semiconductor layer.
Claim 14
Dependent Claim
38 words
The method of claim 9 further comprising a step of etching the surface of said crystallized semiconductor layer after the step of heating said semiconductor layer in order to make the surface of said crystillized semiconductor layer uneven.
Claim 15
Dependent Claim
14 words
The method of claim 9 wherein said photoelectric conversion device is a solar cell.
Claim 16
Independent Claim
95 words
A method of manufacturing a photoelectric conversion device, comprising: disposing a metal containing layer in contact with a non-single crystalline silicon semiconductor layer, said metal being a catalyst that promotes crystallization of said silicon semiconductor layer; crystallizing said semiconductor layer by a heating treatment wherein said metal functions to promote said crystallization forming a phospho-silicate glass layer on said semiconductor layer after said crystallizing; and heating said phosphorus silicate glass layer and said semiconductor layer to activate phosphorus ions in said phospho-silicate glass layer for gettering said catalyst metal contained in said crystallized semiconductor layer.
Claim 17
Independent Claim
95 words
A method of manufacturing a photoelectric conversion device, comprising: disposing a metal containing layer in contact with a non-single crystalline silicon semiconductor layer, said metal being a catalyst that promotes crystallization of said silicon semiconductor layer; crystallizing said semiconductor layer by a heating treatment wherein said metal functions to promote said crystallization forming a phospho-silicate glass layer on said semiconductor layer after said crystallizing; and heating said phosphorus silicate glass layer and said semiconductor layer to activate phosphorus ions in said phospho-silicate glass layer for gettering said catalyst metal contained in said crystallized semiconductor layer.
Claim 18
Dependent Claim
36 words
The method of claim 13 wherein said non-single crystalline silicon semiconductor layer is formed on a substrate having an electrode thereon and said metal containing layer is formed on an upper surface of said semiconductor layer.
Claim 19
Dependent Claim
21 words
The method of claim 13 wherein said phospho-silicate glass layer contains phosphorus at a concentration of 1 to 30 wt %.
Claim 20
Dependent Claim
44 words
The method of claim 13 further comprising a step of etching the surface of said crystallized semiconductor layer after the step of heating said phospho-silicate glass layer and said crystallized semiconductor layer in order to make the surface of said crystallized semiconductor layer uneven.
Claim 21
Dependent Claim
14 words
The method of claim 13 wherein said photoelectric conversion device is a solar cell.
Claim 22
Independent Claim
95 words
A method of manufacturing a photoelectric conversion device, comprising: forming a metal layer on a substrate, said metal being a catalyst to promote crystallization of silicon; depositing a non-single crystalline silicon semiconductor layer on said metal layer; crystallizing said semiconductor layer by a heating process wherein said metal functions to promote crystallization of said semiconductor layer; forming a phosphorus containing layer or region on or within said semiconductor layer after said crystallizing; and heating said phosphorus containing layer or region and said crystallized semiconductor layer so that said phosphorus is activated to getter said metal.
Claim 23
Independent Claim
95 words
A method of manufacturing a photoelectric conversion device, comprising: forming a metal layer on a substrate, said metal being a catalyst to promote crystallization of silicon; depositing a non-single crystalline silicon semiconductor layer on said metal layer; crystallizing said semiconductor layer by a heating process wherein said metal functions to promote crystallization of said semiconductor layer; forming a phosphorus containing layer or region on or within said semiconductor layer after said crystallizing; and heating said phosphorus containing layer or region and said crystallized semiconductor layer so that said phosphorus is activated to getter said metal.
Claim 24
Dependent Claim
44 words
The method of claim 18 further comprising a step of etching the surface of said crystallized semiconductor layer after the step of heating said phosphorus containing layer and said crystallized semiconductor layer in order to make the surface of said crystallized semiconductor layer uneven.
Claim 25
Dependent Claim
13 words
The method of claim 18 wherein said photoelectric conversion device is solar cell.
Claim 26
Dependent Claim
71 words
A solar cell comprising: a substrate; a first crystalline silicon film of a first conductivity type on said substrate, having a metal catalyst element for promoting crystallization of silicon at a concentration not higher than 5×10 18 atoms/cm 3 ; and a second crystalline silicon film a second conductivity type that is different from said first conductivity type, said second crystalline silicon film being adjacent to said first crystalline silicon film.
Claim 27
Dependent Claim
71 words
A solar cell comprising: a substrate; a first crystalline silicon film of a first conductivity type on said substrate, having a metal catalyst element for promoting crystallization of silicon at a concentration not higher than 5×10 18 atoms/cm 3 ; and a second crystalline silicon film a second conductivity type that is different from said first conductivity type, said second crystalline silicon film being adjacent to said first crystalline silicon film.
Claim 28
Dependent Claim
30 words
The solar cell of claim 21 wherein said metal catalyst element is selected from the group consisting of Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
Claim 29
Dependent Claim
37 words
The solar cell of claim 21 wherein the concentration of said catalyst element contained in said second crystalline silicon film is higher than said the concentration of said metal catalyst contained in said first crystalline silicon film.
Claim 30
Dependent Claim
23 words
The solar cell of claim 21 wherein said first crystalline silicon film comprises a plurality of crystal grains in the form of needles.
Claim 31
Independent Claim
83 words
A method of manufacturing a semiconductor device, comprising: disposing a catalyst material in contact with a surface of a non-single crystalline silicon semiconductor layer, said catalyst material including a metal; crystallizing said non-single crystalline silicon semiconductor layer, wherein said metal operates to promote said crystallization; forming a gettering layer or region comprising phosphorus on or within said semiconductor layer after said crystallization; and heating said semiconductor layer and said gettering layer or region to getter said metal contained in said crystallized semiconductor layer.
Claim 32
Independent Claim
83 words
A method of manufacturing a semiconductor device, comprising: disposing a catalyst material in contact with a surface of a non-single crystalline silicon semiconductor layer, said catalyst material including a metal; crystallizing said non-single crystalline silicon semiconductor layer, wherein said metal operates to promote said crystallization; forming a gettering layer or region comprising phosphorus on or within said semiconductor layer after said crystallization; and heating said semiconductor layer and said gettering layer or region to getter said metal contained in said crystallized semiconductor layer.
Claim 33
Dependent Claim
23 words
A method according to claim 25, wherein said crystallizing of said non-single crystalline silicon semiconductor layer is carried out by a heating treatment.
Claim 34
Dependent Claim
28 words
A method according to claim 25, wherein said metal is selected from a group consisting of Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
Claim 35
Independent Claim
66 words
A method of manufacturing a semiconductor device, comprising: disposing a catalyst material comprising a metal in contact with a non-single crystalline silicon semiconductor layer; crystallizing said semiconductor layer, wherein said metal operates to promote said crystallization; introducing phosphorus ions into a portion of said semiconductor layer after said crystallizing; and subsequentially heating said crystallized semiconductor layer so that said metal is gettered by said phosphorus ions.
Claim 36
Independent Claim
66 words
A method of manufacturing a semiconductor device, comprising: disposing a catalyst material comprising a metal in contact with a non-single crystalline silicon semiconductor layer; crystallizing said semiconductor layer, wherein said metal operates to promote said crystallization; introducing phosphorus ions into a portion of said semiconductor layer after said crystallizing; and subsequentially heating said crystallized semiconductor layer so that said metal is gettered by said phosphorus ions.
Claim 37
Dependent Claim
23 words
A method according to claim 28, wherein said crystallizing of said non-single crystalline silicon semiconductor layer is carried out by a heating process.
Claim 38
Dependent Claim
28 words
A method according to claim 28, wherein said metal is selected from a group consisting of Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.
Claim 39
Dependent Claim
30 words
A method according to claim 28, further comprising a step of removing said portion of said crystallized semiconductor layer by an etching process after said heating of said semiconductor layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-22 | 2001-06-23 | 2001-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-22 | 2005-06-23 | 2005-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-22 | 2009-06-23 | 2009-12-23 | $7700.00 | Window Closed / Lapsed |