US5085711A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photovoltaic device
Assignee: Sanyo Electric Co Ltd
•
Filing: 1990-02-15
•
Granted: 1992-02-04
•
Expires: 2010-02-15
Abstract
Abstract A photovoltaic device capable of obtaining a high open circuit voltage, in which crystallization of a semiconductor is accelerated from the first stage of formation thereof such that a thin layer of the semiconductor is crystallized, by doping an electrode disposed between the semiconductor and a substrate with an element which reacts with an element in the semiconductor to accelerate crystallization of the semiconductor or by disposing a film made from a compound doped with said element between the semiconductor and the substrate.
Inventors
- 👤 Masayuki Iwamoto
- 👤 Koji Minami
- 👤 Kaneo Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 07:06
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F77/1648; H10F77/20; H10F77/244; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
106 words
A photovoltaic device with a substrate and a multiplicity of layers formed in overlying sequence on a surface of the substrate, comprising: an electrode on said surface of the substrate; and a semiconductor layer comprising a microcrystalline semiconductor layer and an amorphous semiconductor layer, with said microcrystalline semiconductor layer on said electrode; wherein a film containing an element which reacts with an element in said microcrystalline semiconductor layer to accelerate microcrystallization of said microcrystalline semiconductor layer is disposed at the boundary between said electrode and said microcrystalline semiconductor layer and wherein said element in said film is selected from the group consisting of nitrogen and phosphorus.
Claim 2
Dependent Claim
106 words
A photovoltaic device with a substrate and a multiplicity of layers formed in overlying sequence on a surface of the substrate, comprising: an electrode on said surface of the substrate; and a semiconductor layer comprising a microcrystalline semiconductor layer and an amorphous semiconductor layer, with said microcrystalline semiconductor layer on said electrode; wherein a film containing an element which reacts with an element in said microcrystalline semiconductor layer to accelerate microcrystallization of said microcrystalline semiconductor layer is disposed at the boundary between said electrode and said microcrystalline semiconductor layer and wherein said element in said film is selected from the group consisting of nitrogen and phosphorus.
Claim 3
Dependent Claim
18 words
A Photovoltaic device as set forth in claim 1, wherein said film is formed of silicon containing nitrogen.
Claim 4
Dependent Claim
18 words
A photovoltaic device as set forth in claim 1, wherein said film is disposed all over said electrode.
Claim 5
Dependent Claim
22 words
A Photovoltaic device as set forth in claim 1, wherein said film is arranged like islands on a surface of said electrode.
Claim 6
Dependent Claim
14 words
A Photovoltaic device as set forth in claim 1, wherein said substrate is transparent.
Claim 7
Dependent Claim
14 words
A photovoltaic device as set forth in claim 1, wherein said substrate is conductive.
Claim 8
Dependent Claim
25 words
A photovoltaic device as set forth in claim 1, wherein said surface of the substrate is coated with a conductive film serving as said electrode.
Claim 9
Dependent Claim
11 words
The photovoltaic device of claim 1, wherein said element is phosphorus.
Claim 10
Dependent Claim
91 words
A photovoltaic device with a substrate and a multiplicity of layers formed in overlying sequence on a surface of the substrate, comprising: an electrode on said surface of the substrate; and a semiconductor comprising a microcrystalline semiconductor layer and an amorphous semiconductor layer, with said microcrystalline semiconductor layer on said electrode; wherein said electrode is doped with an element which reacts with an element in said microcrystalline semiconductor layer to accelerate crystallization of said microcrystalline semiconductor layer, and wherein said element is selected from the group consisting and nitrogen or phosphorus.
Claim 11
Dependent Claim
91 words
A photovoltaic device with a substrate and a multiplicity of layers formed in overlying sequence on a surface of the substrate, comprising: an electrode on said surface of the substrate; and a semiconductor comprising a microcrystalline semiconductor layer and an amorphous semiconductor layer, with said microcrystalline semiconductor layer on said electrode; wherein said electrode is doped with an element which reacts with an element in said microcrystalline semiconductor layer to accelerate crystallization of said microcrystalline semiconductor layer, and wherein said element is selected from the group consisting and nitrogen or phosphorus.
Claim 12
Dependent Claim
19 words
A photovoltaic device as set forth in claim 9, wherein said element accelerating crystallization of the semiconductor is nitrogen.
Claim 13
Dependent Claim
19 words
A photovoltaic device as set forth in claim 9, wherein said element accelerating crystallization of the semiconductor is phosphorus.
Claim 14
Dependent Claim
14 words
A photovoltaic device as set forth in claim 9, wherein said substrate is transparent.
Claim 15
Dependent Claim
14 words
A Photovoltaic device as set forth in claim 9, wherein said substrate is conductive.
Claim 16
Dependent Claim
22 words
A photovoltaic device as set forth in claim 9, wherein said substrate is coated with a conductive material serving as said electrode.
Claim 17
Dependent Claim
18 words
A Photovoltaic device as set forth in claim 9, wherein said electrode is uniform-y doped with said element.
Claim 18
Dependent Claim
34 words
A photovoltaic device as set forth in claim 9, wherein said electrode is so doped with said element that the concentration of said element is greater on the side in contact with said semiconductor.
Claim 19
Dependent Claim
26 words
A photovoltaic device as set forth in claim 9, wherein said electrode is doped with said element only on the side in contact with said semiconductor.
Claim 20
Dependent Claim
33 words
A photovoltaic device as set forth in claim 17, wherein the concentration of said element doped in said electrode on the side in contact with said semiconductor is 1 to 10 at. %.
Claim 21
Dependent Claim
11 words
The photovoltaic device of claim 9, wherein said element is nitrogen.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-03 | 1995-08-05 | 1996-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-03 | 1999-08-05 | 2000-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-03 | 2003-08-05 | 2004-02-04 | $7700.00 | Window Closed / Lapsed |