US5894160A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a landing pad structure in an integrated circuit
Assignee: STMicroelectronics lnc USA
•
Filing: 1996-10-03
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Granted: 1999-04-13
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Expires: 2016-10-03
Abstract
Abstract A method is provided for forming an improved landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first opening is formed through a first dielectric layer to expose a portion of a diffused region. A first polysilicon landing pad is formed over the first dielectric layer and in the opening. This landing pad will provide for smaller geometries and meet stringent design rules such as that for contact space to gate. A dielectric pocket is formed over the polysilicon landing pad over the active region. A second conductive landing pad is formed over the polysilicon landing pad and the dielectric pocket. A second dielectric layer is formed over the landing pad having a second opening therethrough exposing a portion of the landing pad. A conductive contact, such as aluminum, is formed in the second contact opening. The conductive contact will electrically connect with the diffused region through the landing pad. Misalignment of the conductive contact opening over the landing pad may be tolerated without invading design rules. The landing pad and the dielectric pocket will enhance planarization to provide for better step coverage of the metal contact in the second opening.
Inventors
- 👤 Tsiu C. Chan
- 👤 Frank R. Bryant
- 👤 Loi N. Nguyen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:25
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D89/00; H10D89/60; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; H10W20/40; H10W20/41; H10W20/42; H10W20/435
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
139 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of devices over a substrate; an active region on the substrate between at least two devices; a first dielectric layer disposed over the devices and a portion of the active region; a polysilicon landing pad disposed over the exposed portion of the active region and a selected portion of the first dielectric layer; a dielectric pocket disposed over a portion of the polysilicon landing pad, wherein an upper surface of the polysilicon landing pad is exposed; a conductive landing pad disposed only over the exposed portion of the polysilicon landing pad over the selected portion of the first dielectric layer and over the dielectric pocket; and a second dielectric layer disposed over a portion of the conductive landing pad.
Claim 2
Dependent Claim
139 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of devices over a substrate; an active region on the substrate between at least two devices; a first dielectric layer disposed over the devices and a portion of the active region; a polysilicon landing pad disposed over the exposed portion of the active region and a selected portion of the first dielectric layer; a dielectric pocket disposed over a portion of the polysilicon landing pad, wherein an upper surface of the polysilicon landing pad is exposed; a conductive landing pad disposed only over the exposed portion of the polysilicon landing pad over the selected portion of the first dielectric layer and over the dielectric pocket; and a second dielectric layer disposed over a portion of the conductive landing pad.
Claim 3
Dependent Claim
20 words
The structure of claim 1, further comprising: a conductive contact disposed over the exposed portion of the conductive landing pad.
Claim 4
Dependent Claim
128 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of devices over a substrate; an active region on the substrate between at least two devices; a first dielectric layer disposed over the devices and a portion of the active region; a polysilicon landing pad disposed over the exposed portion of the active region and a portion of the first dielectric layer; a dielectric pocket disposed over a portion of the polysilicon landing pad, wherein an upper surface of the polysilicon landing pad is exposed; a conductive landing pad disposed over the exposed portion of the polysilicon landing pad and over the dielectric pocket; and a second dielectric layer disposed over a portion of the conductive landing pad.
Claim 5
Dependent Claim
128 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of devices over a substrate; an active region on the substrate between at least two devices; a first dielectric layer disposed over the devices and a portion of the active region; a polysilicon landing pad disposed over the exposed portion of the active region and a portion of the first dielectric layer; a dielectric pocket disposed over a portion of the polysilicon landing pad, wherein an upper surface of the polysilicon landing pad is exposed; a conductive landing pad disposed over the exposed portion of the polysilicon landing pad and over the dielectric pocket; and a second dielectric layer disposed over a portion of the conductive landing pad.
Claim 6
Dependent Claim
20 words
The structure of claim 3, further comprising: a conductive contact disposed over the exposed portion of the conductive landing pad.
Claim 7
Dependent Claim
20 words
The structure of claim 3, wherein the active region comprises a shared contact in an upper portion of the substrate.
Claim 8
Dependent Claim
13 words
The structure of claim 3, wherein the first dielectric layer comprises an oxide.
Claim 9
Dependent Claim
21 words
The structure of claim 3, wherein the first dielectric layer has a thickness on the order of 500 to 2000 angstroms.
Claim 10
Dependent Claim
14 words
The structure of claim 3, wherein the polysilicon landing pad comprises a doped polysilicon.
Claim 11
Dependent Claim
21 words
The structure of claim 3, wherein the polysilicon landing pad has a thickness on the order of 1000 to 2000 angstroms.
Claim 12
Dependent Claim
11 words
The structure of claim 3, wherein the dielectric pocket comprises spin-on-glass.
Claim 13
Dependent Claim
14 words
The structure of claim 3, wherein the conductive landing pad comprises a refractory metal.
Claim 14
Dependent Claim
15 words
The structure of claim 3, wherein the conductive landing pad comprises a refractory metal silicide.
Claim 15
Dependent Claim
14 words
The structure of claim 3, wherein the conductive landing pad comprises a doped polysilicon.
Claim 16
Dependent Claim
135 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of devices over a substrate; an active region on the substrate between at least two devices; a first dielectric layer disposed over the devices and a portion of the active region; a conductive landing pad, comprising: a first conductive region disposed over the exposed portion of the active region and a selected portion of the first dielectric layer; a dielectric pocket disposed over a portion of the first conductive region, wherein an upper surface of the first conductive region pad is exposed; a second conductive region disposed over the exposed portion of the first conductive region and over the dielectric pocket; and a second dielectric layer disposed over a portion of the conductive landing pad.
Claim 17
Dependent Claim
135 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of devices over a substrate; an active region on the substrate between at least two devices; a first dielectric layer disposed over the devices and a portion of the active region; a conductive landing pad, comprising: a first conductive region disposed over the exposed portion of the active region and a selected portion of the first dielectric layer; a dielectric pocket disposed over a portion of the first conductive region, wherein an upper surface of the first conductive region pad is exposed; a second conductive region disposed over the exposed portion of the first conductive region and over the dielectric pocket; and a second dielectric layer disposed over a portion of the conductive landing pad.
Claim 18
Dependent Claim
165 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of conductive structures over a substrate; an active region on the substrate between at least two conductive structures; insulating material over the conductive structures and adjacent to the conductive structures, a first portion of the insulating material adjacent to each conductive structure overlying a portion of the active region and defining a contact opening self-aligned to a heavily doped portion of the active region, a second portion of the insulating material adjacent to each conductive structure overlying part of the heavily doped portion of the active region to leave an exposed portion of the active region; a landing pad disposed over the exposed portion of the active region in the contact opening, the insulating material adjacent to the conductive structures, and a portion of the insulating material over the conductive structures; and a second dielectric layer disposed over a portion of the conductive landing pad.
Claim 19
Dependent Claim
165 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of conductive structures over a substrate; an active region on the substrate between at least two conductive structures; insulating material over the conductive structures and adjacent to the conductive structures, a first portion of the insulating material adjacent to each conductive structure overlying a portion of the active region and defining a contact opening self-aligned to a heavily doped portion of the active region, a second portion of the insulating material adjacent to each conductive structure overlying part of the heavily doped portion of the active region to leave an exposed portion of the active region; a landing pad disposed over the exposed portion of the active region in the contact opening, the insulating material adjacent to the conductive structures, and a portion of the insulating material over the conductive structures; and a second dielectric layer disposed over a portion of the conductive landing pad.
Claim 20
Dependent Claim
85 words
The structure of claim 15, wherein the insulating material adjacent to the conductive structures further comprises: first sidewall spacers adjacent the conductive structures and the insulating material over the conductive structure and overlying lightly doped portions of the active region, the first sidewalls spacers forming the first portion of the insulating material adjacent to the conductive structures; and second sidewall spacers adjacent and over the first sidewall spacers, the second sidewall spacers forming the second portion of the insulating material adjacent to the conductive structures.
Claim 21
Dependent Claim
79 words
The structure of claim 15, wherein the landing pad further comprises: a polysilicon layer over the exposed portion of the active region in the contact opening, the insulating material adjacent to the conductive structures, and a portion of the material over the conductive structures; a dielectric pocket over a portion of the polysilicon layer, leaving a peripheral portion of the polysilicon layer exposed; and a conductive layer over the exposed portion of the polysilicon layer and the dielectric pocket.
Claim 22
Dependent Claim
168 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of conductive structures over a substrate; an active region on the substrate between at least two conductive structures; insulating material over the conductive structures and adjacent to the conductive structures, the insulating material adjacent to each conductive structure overlying a portion of the active region and defining a contact opening self-aligned to a heavily doped portion of the active region; a polysilicon landing pad disposed over an exposed portion of the active region in the contact opening, the insulating material adjacent to the conductive structures, and a portion of the insulating material over the conductive structures; a dielectric pocket over a portion of the polysilicon landing pad, wherein a peripheral portion of the polysilicon landing pad is exposed; a conductive landing pad over the exposed portion of the polysilicon landing pad the dielectric pocket; and a second dielectric layer disposed over a portion of the conductive landing pad.
Claim 23
Dependent Claim
168 words
The structure of a portion of a semiconductor integrated circuit formed at a surface of a body, comprising: a plurality of conductive structures over a substrate; an active region on the substrate between at least two conductive structures; insulating material over the conductive structures and adjacent to the conductive structures, the insulating material adjacent to each conductive structure overlying a portion of the active region and defining a contact opening self-aligned to a heavily doped portion of the active region; a polysilicon landing pad disposed over an exposed portion of the active region in the contact opening, the insulating material adjacent to the conductive structures, and a portion of the insulating material over the conductive structures; a dielectric pocket over a portion of the polysilicon landing pad, wherein a peripheral portion of the polysilicon landing pad is exposed; a conductive landing pad over the exposed portion of the polysilicon landing pad the dielectric pocket; and a second dielectric layer disposed over a portion of the conductive landing pad.
References Cited (Backward Citations)
US4441247A
Cited
US4810666A
Cited
US4851895A
Cited
JPS62136856A
Cited
US5247199A
Cited
US4707457A
Cited
JPS62272555A
Cited
US5293053A
Cited
US4782380A
Cited
US4795722A
Cited
US4789885A
Cited
US4884123A
Cited
US4795718A
Cited
US4822449A
Cited
US5071783A
Cited
US4916397A
Cited
US4822749A
Cited
US5236867A
Cited
US5081516A
Cited
US4922311A
Cited
US4844776A
Cited
US4868138A
Cited
US4994410A
Cited
JPH01304807A
Cited
EP0369336A2
Cited
EP0380327A2
Cited
US5036383A
Cited
US4908332A
Cited
JPH0316220A
Cited
US5192715A
Cited
JPH0373531A
Cited
US4984056A
Cited
US5036378A
Cited
US5275972A
Cited
US5210429A
Cited
US5158910A
Cited
US4997790A
Cited
US5214305A
Cited
US5296729A
Cited
EP0499433A2
Cited
US5581093A
Cited
EP0503904A2
Cited
JPH04307732A
Cited
US5219789A
Cited
US5198683A
Cited
US5315141A
Cited
US5110752A
Cited
US5448091A
Cited
US5298463A
Cited
US5298792A
Cited
US5414302A
Cited
EP0566253A1
Cited
US5229326A
Cited
US5316976A
Cited
US5596212A
Cited
US5308795A
Cited
US5359226A
Cited
US5616934A
Cited
US5334862A
Cited
US5604382A
Cited
US5420058A
Cited
US5541137A
Cited
US5633196A
Cited
US5514622A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-12 | 2002-10-12 | 2003-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-12 | 2006-10-12 | 2007-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-12 | 2010-10-12 | 2011-04-13 | $7700.00 | Window Closed / Lapsed |