US5219789A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming contact portion of semiconductor device
Assignee: Sharp Corp
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Filing: 1992-03-23
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Granted: 1993-06-15
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Expires: 2012-03-23
Abstract
Abstract A method for forming a contact portion which comprises holing a contact hole in a dielectric layer formed on a silicon substrate, protecting at least exposed portion of the silicon substrate at the bottom of the contact hole with TiW film and then depositing tungsten in the contact hole by CVD method.
Inventors
- 👤 Alberto O. Adan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/032; H10W20/054
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
124 words
A method for forming a contact portion which comprises: (a) boring a contact hole in a dielectric layer formed on a silicon substrate; (b) depositing a TiW film on a surface of the dielectric layer including the contact hole; (c) forming an SOG layer which only partially fills the contact hole; (d) etching the TiW film while using the SOG layer as a mask so that the TiW film remains only on a bottom surface and a portion of a side surface of the contact hole; (e) removing the SOG layer; (f) growing tungsten on the TiW film to fill the contact hole with tungsten; and, (g) forming a metal pattern on the dielectric layer for electrically connecting the tungsten in the contact hole.
Claim 2
Independent Claim
124 words
A method for forming a contact portion which comprises: (a) boring a contact hole in a dielectric layer formed on a silicon substrate; (b) depositing a TiW film on a surface of the dielectric layer including the contact hole; (c) forming an SOG layer which only partially fills the contact hole; (d) etching the TiW film while using the SOG layer as a mask so that the TiW film remains only on a bottom surface and a portion of a side surface of the contact hole; (e) removing the SOG layer; (f) growing tungsten on the TiW film to fill the contact hole with tungsten; and, (g) forming a metal pattern on the dielectric layer for electrically connecting the tungsten in the contact hole.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein the thickness of the TiW film is about 400 to 600 Å at the bottom of the contact portion.
Claim 4
Dependent Claim
46 words
The method of claim 1, wherein the SOG layer is formed by: (h) depositing a SOG film so that the contact hole is completely filled therewith; (i) etching back the SOG film to form a SOG layer which fills only a portion of the contact hole.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-14 | 1996-12-14 | 1997-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-14 | 2000-12-14 | 2001-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-14 | 2004-12-14 | 2005-06-15 | $7700.00 | Window Closed / Lapsed |