US4984056A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device
Assignee: Mitsubishi Electric Corp
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Filing: 1989-12-14
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Granted: 1991-01-08
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Expires: 2009-12-14
Abstract
Abstract A semiconductor integrated circuit device includes a tetraethylorthosilicate film between a TiN film and a field oxide film disposed. This structure greatly reduced the possibility of separation of films in the bonding structure and contact failure as part of a wire bonding structure.
Inventors
- 👤 Hitoshi Fujimoto
- 👤 Kiyoaki Tsumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:51
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W72/00; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/90; H10W72/921; H10W72/922; H10W72/9226; H10W72/923; H10W72/931; H10W72/934; H10W72/951; H10W72/952; H10W72/981; H10W72/983; Y; Y10; Y10S; Y10S257/00; Y10S257/915; Y10S257/924
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
61 words
A semiconductor integrated circuit device comprising: a semiconductor substrate; an oxide film disposed on said semiconductor substrate; an insulating film disposed on said oxide film; a tetraethylorthosilicate film disposed on said insulating film; a titanium nitride film disposed on said tetraethylorthosilicate film; a bonding pad disposed on said titanium nitride film; and an insulating protective film disposed on said tetraethylorthosilicate film.
Claim 2
Dependent Claim
61 words
A semiconductor integrated circuit device comprising: a semiconductor substrate; an oxide film disposed on said semiconductor substrate; an insulating film disposed on said oxide film; a tetraethylorthosilicate film disposed on said insulating film; a titanium nitride film disposed on said tetraethylorthosilicate film; a bonding pad disposed on said titanium nitride film; and an insulating protective film disposed on said tetraethylorthosilicate film.
Claim 3
Dependent Claim
16 words
A device as claimed in claim 1 wherein said insulating film is boron phosphorus silicate glass.
Claim 4
Dependent Claim
59 words
A device as claimed in claim 1 wherein said bonding pad has a surface to which a wire may be bonded, said bonding pad and titanium nitride film have sides transverse to the surface, said insulating protective film covers the sides of said bonding pad and said titanium nitride film, and the surface of said bonding pad is exposed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |