US4811078A
Expired / Lapsed
US
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Integrated circuit device and process with tin capacitors
Assignee: Texas Instruments Inc
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Filing: 1986-12-05
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Granted: 1989-03-07
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Expires: 2006-12-05
Abstract
Abstract A new integrated circuit structure, wherein a TiN thin film layer 129 and another patterned thin film layer 124 preferably comprising polysilicon are separated (in some locations) by a thin dielectric 132 to define capacitors. At various other locations, the TiN layers 129 also makes contact to the polysilicon layer 124 (which will be silicide-clad at these locations), makes contact to n+ substrate regions 134 and p+ substrate regions 136, and also to provide a contact pad for a third patterned thin film conductor layer which overlies the other two. One important class of embodiments provides a floating-memory cell. wherein the floating gate 120 is made of polysilicon, but the control gate 142 consists predominantly of titanium nitride. A novel process for forming the titanium nitride control gate 142 and simultaneously forming titanium nitride local interconnect lines 149 is also disclosed.
Inventors
- 👤 Howard L. Tigelaar
- 👤 Roger A. Haken
- 👤 Thomas C. Holloway
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:33
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/40; H10B10/00; H10B10/12; H10B10/125; H10B41/42; H10B41/43; H10B41/48; H10B41/49; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
113 words
An integrated circuit device comprising: a substrate; device isolation regions defining predetermined moat areas of exposed semiconducting material; a plurality of active devices near the surface of said moat areas, said active devices including portions of a first patterned thin film conductive layer; and a local interconnect layer comprising a patterned thin film consisting substantially of titanium nitride, some portions of said patterned local interconnect thin film interconnecting predetermined portions of said moat regions over said device isolation regions, and some portions of said patterned local interconnect thin film overlying a relatively thin thin film insulator over at least some respective portions of said first patterned thin film conductive layer to define capacitors.
Claim 2
Dependent Claim
113 words
An integrated circuit device comprising: a substrate; device isolation regions defining predetermined moat areas of exposed semiconducting material; a plurality of active devices near the surface of said moat areas, said active devices including portions of a first patterned thin film conductive layer; and a local interconnect layer comprising a patterned thin film consisting substantially of titanium nitride, some portions of said patterned local interconnect thin film interconnecting predetermined portions of said moat regions over said device isolation regions, and some portions of said patterned local interconnect thin film overlying a relatively thin thin film insulator over at least some respective portions of said first patterned thin film conductive layer to define capacitors.
Claim 3
Dependent Claim
18 words
The device of claim 1, wherein said local interconnect layer also comprises at least 5% atomic of oxygen.
Claim 4
Dependent Claim
16 words
The device of claim 1, wherein said local interconnect layer is less than 2000 Angstroms thick.
Claim 5
Dependent Claim
15 words
The device of claim 1, wherein said local interconnect layer consists essentially of titanium nitride.
Claim 6
Dependent Claim
34 words
The device of claim 1, wherein all portions of said local interconnect layer which are more than 50 Angstroms away from an upper or lower surface thereof consist of more than 90% titanium nitride.
Claim 7
Dependent Claim
26 words
The device of claim 1, wherein said portions of said local interconnect thin film make contact to titanium silicide layers at the surface of moat regions.
Claim 8
Dependent Claim
21 words
The device of claim 1, wherein said first conductive thin film layer is polycrystalline and comprises a substantial fraction of silicon.
Claim 9
Dependent Claim
114 words
An integrated circuit device comprising: a substrate; device isolation regions defining a plurality of moat areas of semiconducting material; an active device near the surface of one of said moat areas, said active device including a portion of a first patterned thin film conductive layer; and a second patterned thin film conductive layer consisting predominantly of titanium nitride, a portion of said second conductive layer extending over one of said device isolation regions to make ohmic contact between portions of separate ones of said moat areas, and a portion of said second conductive layer overlying a relatively thin thin film insulator over a portion of one of said moat area to define a capacitor.
Claim 10
Dependent Claim
114 words
An integrated circuit device comprising: a substrate; device isolation regions defining a plurality of moat areas of semiconducting material; an active device near the surface of one of said moat areas, said active device including a portion of a first patterned thin film conductive layer; and a second patterned thin film conductive layer consisting predominantly of titanium nitride, a portion of said second conductive layer extending over one of said device isolation regions to make ohmic contact between portions of separate ones of said moat areas, and a portion of said second conductive layer overlying a relatively thin thin film insulator over a portion of one of said moat area to define a capacitor.
Claim 11
Dependent Claim
55 words
The device of claim 8, wherein said substrate comprises both PMOS moat regions comprising p+ source/drain regions therein and NMOS moat regions comprising n+ source/drain regions therein, and wherein said titanium nitride layer is patterned to provide predetermined connections from predetermined ones of said p+ source/drain regions to predetermined ones of said n+ source/drain regions.
Claim 12
Dependent Claim
24 words
The device of claim 8, wherein some portions of said second conductive layer make ohmic contact to predetermined portions of said first conductive layer.
Claim 13
Dependent Claim
18 words
The device of claim 8, wherein said second conductive layer also comprises at least 5% atomic of oxygen.
Claim 14
Dependent Claim
16 words
The device of claim 8, wherein said second conductive layer is less than 2000 Angstroms thick.
Claim 15
Dependent Claim
15 words
The device of claim 8, wherein said second conductive layer consists essentially of titanium nitride.
Claim 16
Dependent Claim
34 words
The device of claim 8, wherein all portions of said second conductive layer which are more than 50 Angstroms away from an upper or lower surface thereof consist of more than 90% titanium nitride.
Claim 17
Dependent Claim
37 words
The device of claim 8, wherein said portion of said second conductive layer which makes contact to said first moat area is in contact with a titanium silicide layer at the surface of said first moat area.
Claim 18
Dependent Claim
21 words
The device of claim 8, wherein said first conductive thin film layer is polycrystalline and comprises a substantial fraction of silicon.
Claim 19
Dependent Claim
42 words
The device of claim 8, wherein said moat regions are substantially covered by an interlevel dielectric having contact holes filled with metal therein, said metal in said contact holes making contact to portions of said second conductive layer at the bottom thereof.
Claim 20
Dependent Claim
21 words
The device of claim 8, wherein said thin film insulator consists essentially of a combination of silicon dioxide and silicon nitride.
Claim 21
Dependent Claim
22 words
The device of claim 18, wherein said thin film insulator comprises a layer of silicon nitride over a layer of silicon dioxide.
Claim 22
Dependent Claim
124 words
An integrated circuit device comprising: a substrate; device isolation regions defining predetermined moat areas of exposed semiconducting material; a plurality of active devices near the surface of said moat areas, said active devices including portions of a first patterned thin film conductive layer; and a second patterned thin film conductive layer consisting predominantly of titanium nitride, some portions of said second conductive layer making ohmic contact to predetermined p+ portions of said moat areas, some portions of said second conductive layer making ohmic contact to predetermined n+ portions of said moat areas, and some portions of said second conductive layer overlying a relatively thin thin film insulator over at least some respective portions of said first patterned thin film conductive layer to define capacitors.
Claim 23
Dependent Claim
124 words
An integrated circuit device comprising: a substrate; device isolation regions defining predetermined moat areas of exposed semiconducting material; a plurality of active devices near the surface of said moat areas, said active devices including portions of a first patterned thin film conductive layer; and a second patterned thin film conductive layer consisting predominantly of titanium nitride, some portions of said second conductive layer making ohmic contact to predetermined p+ portions of said moat areas, some portions of said second conductive layer making ohmic contact to predetermined n+ portions of said moat areas, and some portions of said second conductive layer overlying a relatively thin thin film insulator over at least some respective portions of said first patterned thin film conductive layer to define capacitors.
Claim 24
Dependent Claim
18 words
The device of claim 20, wherein said second conductive layer also comprises at least 5% atomic of oxygen.
Claim 25
Dependent Claim
16 words
The device of claim 20, wherein said second conductive layer is less than 2000 Angstroms thick.
Claim 26
Dependent Claim
15 words
The device of claim 20, wherein said second conductive layer consists essentially of titanium nitride.
Claim 27
Dependent Claim
34 words
The device of claim 20, wherein all portions of said second conductive layer which are more than 50 Angstroms away from an upper or lower surface thereof consist of more than 90% titanium nitride.
Claim 28
Dependent Claim
23 words
The device of claim 20, wherein said second conductive layer makes contact to titanium silicide layers at the surface of said moat regions.
Claim 29
Dependent Claim
21 words
The device of claim 20, wherein said first conductive thin film layer is polycrystalline and comprises a substantial fraction of silicon.
Claim 30
Dependent Claim
42 words
The device of claim 20, wherein said moat regions are substantially covered by an interlevel dielectric having contact holes fillers with metal therein, said metal in said contact holes making contact to portions of said second conductive layer at the bottom thereof.
Claim 31
Dependent Claim
21 words
The device of claim 20, wherein said thin film insulator consists essentially of a combination of silicon dioxide and silicon nitride.
Claim 32
Dependent Claim
22 words
The device of claim 28, wherein said thin film insulator comprises a layer of silicon nitride over a layer of silicon dioxide.
Claim 33
Dependent Claim
104 words
An integrated circuit comprising: a first conductive layer, said first conductive layer being polycrystalline and consisting essentially of silicon; a thin film dielectric overlying some but not all areas of said first conductive layer; a second conductive layer, consisting predominantly of titanium nitride, overlying at least a part of said dielectric at a location where said dielectric overlies said first conductive layer; wherein said first conductive layer further comprises an overlying layer comprising a metal silicide, said silicide layer overlying substantially all of said first conductive layer except where either said thin film dielectric or said second conductive layer overlie said first conductive layer.
Claim 34
Dependent Claim
104 words
An integrated circuit comprising: a first conductive layer, said first conductive layer being polycrystalline and consisting essentially of silicon; a thin film dielectric overlying some but not all areas of said first conductive layer; a second conductive layer, consisting predominantly of titanium nitride, overlying at least a part of said dielectric at a location where said dielectric overlies said first conductive layer; wherein said first conductive layer further comprises an overlying layer comprising a metal silicide, said silicide layer overlying substantially all of said first conductive layer except where either said thin film dielectric or said second conductive layer overlie said first conductive layer.
Claim 35
Dependent Claim
19 words
The integrated circuit of claim 30, wherein said second conductive layer also comprises at least 5% atomic of oxygen.
Claim 36
Dependent Claim
17 words
The integrated circuit of claim 30, wherein said second conductive layer is less than 2000 Angstroms thick.
Claim 37
Dependent Claim
16 words
The integrated circuit of claim 30, wherein said second conductive layer consists essentially of titanium nitride.
Claim 38
Dependent Claim
36 words
The integrated circuit of claim 30, wherein all portions of said said second conductive layer which are more than 50 Angstroms away from an upper or lower surface thereof consist of more than 90% titanium nitride.
Claim 39
Dependent Claim
25 words
The integrated circuit of claim 30, wherein said said second conductive layer makes contact to titanium silicide layers at the surface of said moat regions.
Claim 40
Dependent Claim
22 words
The integrated circuit of claim 30, wherein said thin film insulator consists essentially of a combination of silicon dioxide and silicon nitride.
Claim 41
Dependent Claim
23 words
The integrated circuit of claim 36, wherein said thin film insulator comprises a layer of silicon nitride over a layer of silicon dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-06 | 1992-09-05 | 1993-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-06 | 1996-09-05 | 1997-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-06 | 2000-09-05 | 2001-03-07 | $7700.00 | Window Closed / Lapsed |