US4605947A
Expired / Lapsed
US
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Titanium nitride MOS device gate electrode and method of producing
Assignee: Motorola Solutions Inc
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Filing: 1985-09-24
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Granted: 1986-08-12
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Expires: 2005-09-24
Abstract
Abstract An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.
Inventors
- 👤 J. B. Price
- 👤 Philip J. Tobin
- 👤 Fabio Pintchovski
- 👤 Christian A. Seelbach
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:24
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/667; H10D64/661; H10D64/662; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
34 words
In a metal oxide semiconductor device, a gate electrode and interconnect overlying an insulator comprising: a layer of titanium nitride overlying the insulator; and a layer of silicon overlying the layer of titanium nitride.
Claim 2
Dependent Claim
34 words
In a metal oxide semiconductor device, a gate electrode and interconnect overlying an insulator comprising: a layer of titanium nitride overlying the insulator; and a layer of silicon overlying the layer of titanium nitride.
Claim 3
Dependent Claim
24 words
The gate electrode and interconnect of claim 1 further comprising a layer of silicon overlying the insulator and underlying the layer of titanium nitride.
Claim 4
Dependent Claim
33 words
In a metal oxide semiconductor device, a gate electrode and interconnect overlying an insulator comprising: a layer of silicon overlying the insulator; and a layer of titanium nitride overlying the layer of silicon.
Claim 5
Dependent Claim
33 words
In a metal oxide semiconductor device, a gate electrode and interconnect overlying an insulator comprising: a layer of silicon overlying the insulator; and a layer of titanium nitride overlying the layer of silicon.
References Cited (Backward Citations)
US3879746A
Cited
JPS5230392A
Cited
JPS5422766A
Cited
US4141022A
Cited
JPS5524454A
Cited
GB2104290A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-08-11 | 1990-02-10 | 1990-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-11 | 1994-02-10 | 1994-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-11 | 1998-02-10 | 1998-08-12 | $7700.00 | Window Closed / Lapsed |