Stacked complementary metal oxide semiconductor inverter

Claim 1

A stacked CMOS (Complementary Metal Oxide Semiconductor) inverter comprising: a semiconductor substrate of a first conductivity type; an MOS transistor of a second conductivity type including a first source region and a first drain region, which are of said second conductivity type, provided in one of the surface regions of said semiconductor substrate to form a first channel region, a first insulation layer provided on said first channel region, and a gate electrode provided on said first insulation layer; a second insulation layer for covering the surfaces of said gate electrode, said first source region and said first drain region; an MOS transistor of said first conductivity type including a semiconductor layer formed on said second insulation layer which has a portion facing said gate electrode and serving as a second channel region, a portion facing said first source region and serving as a second source region of said first conductivity type, and a portion facing said first drain region and serving as a second drain region of said first conductivity type, and said gate electrode, with said second insulation layer, interposed between said gate electrode and said second channel region, being used as a gate insulation layer; first, second and third connection electrode means for connecting said first and second source regions, said first drain region, and second drain region, respectively, to an exterior circuit; means for electrically connecting together said first and second source regions while precluding formation of a parasitic diode between said first source region and said first connection electrode means comprising a first conductive layer of a metal silicide interposed directly between said first and second source regions, said first conductive layer covering the entire surface of said first source region, and said source region directly contacting said first conductive layer through a contact hole provided in said second insulating layer; and a second conductive layer, which is comprised of the same material as said first conductive layer, covering the entire surface of said first drain region.