Single plate capacitor having an electrode structure of high adhesion

Claim 2

A single plate capacitor comprising: a dielectric substrate essentially consisting of TiO 2 , and having a first and second main surfaces each provided with a multi-layer film structure positioned thereon, the multi-layer film structure on said first main surface of said dielectric substrate including: a first SiO 2 film formed on said first main surface, a first TiW film formed on said first SiO 2 film, a Pt film formed on said first TiW film, and a first Au film formed on said Pt film; the multi-layer film structure on said second main surface of said dielectric substrate including: a second SiO 2 film formed on said second main surface, a second TiW film formed on said second SiO 2 film, and a second Au film formed on said second TiW film.

Claim 3

A single plate capacitor as claimed in claim 1, wherein the thickness of said first and second SiO 2 films are from 200 Å to 10,100 Å, respectively, the thicknesses of said first and second TiW films are from 200 Å to 1,000 Å, respectively, and the thickness of said Pt film is from 500 Å to 2,000 Å.

Claim 4

A single plate capacitor as claimed in claim 1, wherein said second TiW film and said second Au film are patterned in predetermined sizes in order to obtain a predetermined capacitance value.

Claim 5

An electronic device comprising a heat-sink substrate and a single plate capacitor mounted on said heat-sink substrate by a Au eutectic solder, said single plate capacitor including: a dielectric substrate essentially consisting of TiO 2 and having an upper and lower main surface each provided with a multi-layer film structure positioned thereon; the multi-layer structure on said lower main surface of said dielectric substrate including: a first SiO 2 film formed on said lower main surface, a first TiW film formed on said first SiO 2 film, a Pt film formed on said first TiW film, and a first Au film formed on said Pt film; the multi-layer film on said upper main surface of said dielectric substrate including: a second SiO 2 film formed on said upper main surface, a second TiW film formed on said second SiO 2 film, and a second Au film formed on said second TiW film, wherein a metal wire is bonded on said second Au film.

Claim 6

An electronic device comprising a heat-sink substrate and a single plate capacitor mounted on said heat-sink substrate by a Au eutectic solder, said single plate capacitor including: a dielectric substrate essentially consisting of TiO 2 and having an upper and lower main surface each provided with a multi-layer film structure positioned thereon; the multi-layer structure on said lower main surface of said dielectric substrate including: a first SiO 2 film formed on said lower main surface, a first TiW film formed on said first SiO 2 film, a Pt film formed on said first TiW film, and a first Au film formed on said Pt film; the multi-layer film on said upper main surface of said dielectric substrate including: a second SiO 2 film formed on said upper main surface, a second TiW film formed on said second SiO 2 film, and a second Au film formed on said second TiW film, wherein a metal wire is bonded on said second Au film.

Claim 7

An electric device as claimed in claim 4, wherein the thickness of said first and second SiO 2 films are from 200 Å to 10,000 Å, respectively, the thicknesses of said first and second TiW films are from 200 Å to 1,000 Å, respectively, and the thickness of said Pt film is from 500 Å to 2,000 Å.

Claim 8

An electronic device as claimed in claim 4, wherein said second TiW film and said Au second Au films are patterned in predetermined sizes in order to obtain a predetermined capacitance value.