Diffusion barrier for semiconductor contacts

Abstract

Abstract 1,246,414. Semi-conductor devices. ITT INDUSTRIES Inc. 11 April, 1969 [11 April, 1968], No. 18795/69. Heading H1K. In a semi-conductor device including two superimposed dielectric layers, e.g. SiO 2 layer 5 and glass layer 10, on a semi-conductor surface, undesirable migration of ions from an Ag electrode dot 7 into the upper dielectric layer 10 is prevented by the provision of a coating 9 of a conductive barrier material over the dot 7. In the diode shown, the Ag dot 7 is alloyed on to a preliminary Au/Ni layer on the semi-conductor surface, and the barrier coating 9 is of Ni. Alternative barrier materials are W, Mo, Pt, Pd or Rh. Application of the coating 9 may be by electroless plating or electroplating. The lower electrode 8 comprises Sn-coated Ag. The glass layer 10 is applied initially as a frit and is fused after having been removed from the surface of the upper electrode and from channels around individual devices in a wafer. The wafer is then scribed and diced in the channels. Transistors and integrated circuits are also referred to.

Inventors

• 👤 Norman E De Volder

Bibliographic Details