US5581093A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contact structure of an interconnection layer for a semiconductor device and a multilayer interconnection SRAM
Assignee: Mitsubishi Electric Corp
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Filing: 1995-11-07
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Granted: 1996-12-03
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Expires: 2015-11-07
Abstract
Abstract A silicon layer in a lower layer and an interconnection layer arranged in an upper layer are electrically connected through an opening for contact. A silicon plug layer having the same conductivity type as that of the silicon layer is embedded in the opening. The silicon plug layer is embedded in the opening by an etch back method after deposited using a CVD method. The interconnection layer in the upper layer has conductivity type different from that of the silicon plug layer. A refractory metal silicide layer is formed between the upper interconnection layer and the silicon plug layer. The refractory metal silicide layer prevents pn junction from being formed between the upper interconnection layer and the silicon plug layer.
Inventors
- 👤 Osamu Sakamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:01
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10W20/064; H10W20/066; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
127 words
A semiconductor device having an interconnection contact portion of a first conductivity type, comprising: a silicon layer; an interlevel insulating layer on a surface of said silicon layer; a contact hole formed in said interlevel insulating layer to expose said interconnection contact portion; a silicon plug of a first type conductivity embedded within said contact hole and having a flat upper surface; an interconnection layer of polycrystalline silicon having a second conductivity type on a surface of said interlevel insulating layer; and an intermediate conductive layer for reducing magnitude of voltage drop of pn junction between said interconnection layer and said interconnection contact portion wherein said intermediate conductive layer is of a material doped to be more highly conductive than said interconnection layer and said silicon plug.
Claim 2
Dependent Claim
127 words
A semiconductor device having an interconnection contact portion of a first conductivity type, comprising: a silicon layer; an interlevel insulating layer on a surface of said silicon layer; a contact hole formed in said interlevel insulating layer to expose said interconnection contact portion; a silicon plug of a first type conductivity embedded within said contact hole and having a flat upper surface; an interconnection layer of polycrystalline silicon having a second conductivity type on a surface of said interlevel insulating layer; and an intermediate conductive layer for reducing magnitude of voltage drop of pn junction between said interconnection layer and said interconnection contact portion wherein said intermediate conductive layer is of a material doped to be more highly conductive than said interconnection layer and said silicon plug.
Claim 3
Dependent Claim
28 words
The semiconductor device of claim 1, including an additional conductor layer in said interlevel insulating layer and having a portion exposed through a sidewall of said contact hole.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-03 | 2000-06-03 | 2000-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-03 | 2004-06-03 | 2004-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-03 | 2008-06-03 | 2008-12-03 | $7700.00 | Window Closed / Lapsed |