US5041884A
Expired / Lapsed
US
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Multilayer semiconductor integrated circuit
Assignee: Mitsubishi Electric Corp
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Filing: 1990-10-11
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Granted: 1991-08-20
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Expires: 2010-10-11
Abstract
Abstract The inventive multilayer semiconductor integrated circuit has a columnar semiconductor region provided between adjacent two layers and a control electrode provided in the vicinity of the columnar semiconductor region. The transference of a signal between the adjacent two layers is carried out through the columnar semiconductor region the electric conductivity of which is controlled by a control signal applied to the control electrode. That is, the area corresponding to the columnar semiconductor region functions as an active element.
Inventors
- 👤 Toshio Kumamoto
- 👤 Hiroyuki Kouno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:03
CPC Classifications
H; H10; H10D; H10D88/00; H10D30/00; H10D30/60; H10D30/67; H10D30/6728; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D30/674
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
93 words
A multilayer semiconductor integrated circuit of which a plurality of electronic circuit regions are formed to be stacked in three-dimensions through individual insulating regions, said multilayer semiconductor integrated circuit comprising: a columnar semiconductor region formed to penetrate said insulating region in order to electrically connect said adjacent electronic circuit regions with each other; and a control electrode provided in the vicinity of said columnar semiconductor region within said insulating region in order to control an electric conductivity of said columnar semiconductor region in response to a control signal applied to said control electrode.
Claim 2
Dependent Claim
93 words
A multilayer semiconductor integrated circuit of which a plurality of electronic circuit regions are formed to be stacked in three-dimensions through individual insulating regions, said multilayer semiconductor integrated circuit comprising: a columnar semiconductor region formed to penetrate said insulating region in order to electrically connect said adjacent electronic circuit regions with each other; and a control electrode provided in the vicinity of said columnar semiconductor region within said insulating region in order to control an electric conductivity of said columnar semiconductor region in response to a control signal applied to said control electrode.
Claim 3
Dependent Claim
47 words
A multilayer semiconductor integrated circuit of claim 1, wherein said adjacent electric circuit regions include first conductivity type semiconductor regions respectivelv, and said columnar semiconductor region of a first conductivity type is connected between said individual first conductivity type semiconductor regions of said adjacent electronic circuit regions.
Claim 4
Dependent Claim
47 words
A multilayer semiconductor integrated circuit of claim 1, wherein said adjacent electric circuit regions include first conductivity type semiconductor regions respectively, and said columnar semiconductor region of a second conductivity type is connected between said individual first conductivity type semiconductor regions of said adjacent electronic circuit regions.
Claim 5
Dependent Claim
20 words
A multilayer semiconductor integrated circuit of any of claims 1 to 3, wherein said control electrode is made of polysilicon.
Claim 6
Dependent Claim
21 words
A multilayer semiconductor integrated circuit of any of claims 1 to 3, wherein said control electrode is made of metal material.
Claim 7
Dependent Claim
34 words
A multilayer semiconductor integrated circuit of any of claims 1 to 3, wherein said control electrode consists of a plurality of control electrode regions provided along a longitudinal direction of said columnar semiconductor region.
Claim 8
Dependent Claim
23 words
A multilayer semiconductor integrated circuit of claim 6, wherein control signals different from each other are applied to said control electrode regions respectively.
Claim 9
Dependent Claim
23 words
A multilayer semiconductor integrated circuit of claim 6, wherein control signals similar to each other are applied to said control electrode regions respectively.
References Cited (Backward Citations)
US4929988A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |