Semiconductor device with pillar-shaped contact layer

Claim 2

A semiconductor device comprising: a first conductive layer; an insulating layer formed on the first conductive layer; a plurality of contact holes formed through the insulating layer; a second conductive layer consisting of a plurality of pillar-shaped contacts each respectively formed in a corresponding one of the contact holes; the pillar-shaped contacts each respectively having a projecting portion projecting above the insulating layer, with an equivalent sectional size to a remaining portion standing in the corresponding contact hole; and a third conductive layer consisting of a plurality of conductive portions each respectively selectively grown on the projecting portion of a corresponding one of the pillar-shaped contacts.

Claim 3

The semiconductor device as claimed in claim 1, wherein: each of the conductive portions of the third conductive layer is formed on a substantially entire surface of the projecting portion.

Claim 4

The semiconductor device as claimed in claim 1, wherein: a selected surface region of the projecting portion comprises a first crystalline, and each of the conductive portions of the third conductive layer comprises a second crystalline selectively growable on the first crystalline.

Claim 5

The semiconductor device as claimed in claim 3, wherein: the first and the second crystalline comprise a polycrystalline silicon.

Claim 6

The semiconductor device as claimed in claim 1, wherein: the projecting portion has the same sectional size as the corresponding one of the contact holes.

Claim 7

The semiconductor device as claimed in claim 1, wherein: each of the pillar-shaped contacts comprises a first contact layer deposited on a top surface of the first conductive layer and a side wall of a corresponding one of the contact holes so that an upper surface of the first contact layer defines a recess, and a second contact layer deposited on the upper surface of the first contact layer, to be disposed in the recess.

Claim 8

The semiconductor device as claimed in claim 6, wherein: the first contact layer consists of a first contact material with a coverage property to conformally cover the top surface of the first conductive layer and the side wall of the corresponding contact hole; the second contact layer consists of a second contact material with a coverage property to conformally cover the upper surface of the first contact layer; and the coverage property of the first contact material is superior to the coverage property of the second contact material.

Claim 9

The semiconductor device as claimed in claim 6, wherein: the first contact layer consists of a first contact material with a first resistivity; the second contact layer consists of a second contact material with a second resistivity; the first resistivity is smaller than the second resistivity.

Claim 10

The semiconductor device as claimed in claim 1, further comprising: a capacitive insulation layer formed on the third conductive layer.

Claim 11

The semiconductor device as claimed in claim 1, wherein: the first conductive layer comprises a diffusion layer formed in a semiconductive substrate, and each of the conductive portions of the third conductive layer comprises an electrode.

Claim 12

The semiconductor device as claimed in claim 10, wherein: the electrode comprises a lower electrode of a capacitor layer.

Claim 13

The semiconductor device as claimed in claim 1, wherein: the first conductive layer comprises a diffusion layer formed in a semiconductive substrate, and each of the conductive portions of the third conductive layer comprises a wiring conductor.

Claim 14

The semiconductor device as claimed in claim 1, wherein: the first conductive layer comprises a wiring conductor layer, and the third conductive layer comprises another wiring conductor layer.

Claim 15

The semiconductor device as claimed in claim 1, wherein: the semiconductor device further comprises another insulating layer consisting of a plurality of insulating portions each respectively formed on a top face of the projecting portion, and a side face of the projecting portion has formed thereon a corresponding one of the conductive portions of the third conductive layer.

Claim 16

The semiconductor device as claimed in claim 14, wherein: each of the insulating portions has the same sectional size as a corresponding one of the contact holes.

Claim 17

The semiconductor device as claimed in claim 1, further comprising: a fourth conductive layer consisting of a plurality of conductive portions each respectively formed on a corresponding one of the conductive portions of the third conductive layer.

Claim 18

The semiconductor device as claimed in claim 16, wherein: each of the conductive portions of the fourth conductive layer comprises a wiring conductor.

Claim 19

The semiconductor device as claimed in claim 1, wherein: the semiconductor device further comprises another insulating layer consisting of a plurality of insulating portions each respectively formed on a top face of the projecting portion, and a fourth conductive layer consisting of a plurality of conductive portions each respectively formed on a corresponding one of the conductive portions of the third conductive layer, and a side face of the projecting portion has formed thereon a corresponding one of the conductive portions of the third conductive layer.

Claim 20

The semiconductive device as claimed in claim 18, wherein: the insulating portions has the same sectional size as a corresponding one of the contact holes.

Claim 21

A semiconductor device comprising: a first conductive layer; an insulating layer formed on the first conductive layer; a plurality of contact holes formed through the insulating layer; a second conductive layer consisting of a plurality of substantially pillar-shaped contacts each respectively formed in a corresponding one of the contact holes; the substantially pillar-shaped contacts each respectively having a projecting portion projecting above the insulating layer; and a third conductive layer consisting of a plurality of conductive portions each respectively selectively grown on the projecting portion of a corresponding one of the substantially pillar-shaped contacts, wherein the first conductive layer comprises a diffusion layer formed in a semiconductor substrate, and each of the conductive portions of the third conductive layer comprises an electrode, wherein the electrode comprises a lower electrode of a capacitor layer.

Claim 22

A semiconductor device comprising: a first conductive layer; an insulating layer formed on the first conductive layer; a plurality of contact holes formed through the insulating layer; a second conductive layer consisting of a plurality of substantially pillar-shaped contacts each respectively formed in a corresponding one of the contact holes; the substantially pillar-shaped contacts each respectively having a projecting portion projecting above the insulating layer; and a third conductive layer consisting of a plurality of conductive portions each respectively selectively grown on the projecting portion of a corresponding one of the substantially pillar-shaped contacts, wherein the first conductive layer comprises a diffusion layer formed in a semiconductor substrate, and each of the conductive portions of the third conductive layer comprises an electrode, wherein the electrode comprises a lower electrode of a capacitor layer.

Claim 23

A semiconductor device comprising: a first conductive layer; an insulating layer formed on the first conductive layer; a plurality of contact holes formed through the insulating layer; a second conductive layer consisting of a plurality of pillar-shaped contacts each respectively formed in a corresponding one of the contact holes; the pillar-shaped contacts each respectively having a projecting portion projecting above the insulating layer and a buried portion buried in the corresponding contact hole, said projecting portion and said buried portion having cross sectional sizes which are substantially equal; and a third conductive layer consisting of a plurality of conductive portions each respectively selectively grown on substantially the entire surface of the projecting portion of a corresponding one of the pillar-shaped contacts, wherein electric current is conducted from the first conductive layer to the third conductive layer or vice versa, through the second conductive layer consisting of the pillar-shaped contacts, with the buried portion of each pillar-shaped contact having a bottom end which contacts with the first conductive layer, and with the projecting portion of each pillar-shaped contact contacting with a corresponding one of the conductive portions of the third conductive layer.

Claim 24

A semiconductor device comprising: a first conductive layer; an insulating layer formed on the first conductive layer; a plurality of contact holes formed through the insulating layer; a second conductive layer consisting of a plurality of pillar-shaped contacts each respectively formed in a corresponding one of the contact holes; the pillar-shaped contacts each respectively having a projecting portion projecting above the insulating layer and a buried portion buried in the corresponding contact hole, said projecting portion and said buried portion having cross sectional sizes which are substantially equal; and a third conductive layer consisting of a plurality of conductive portions each respectively selectively grown on substantially the entire surface of the projecting portion of a corresponding one of the pillar-shaped contacts, wherein electric current is conducted from the first conductive layer to the third conductive layer or vice versa, through the second conductive layer consisting of the pillar-shaped contacts, with the buried portion of each pillar-shaped contact having a bottom end which contacts with the first conductive layer, and with the projecting portion of each pillar-shaped contact contacting with a corresponding one of the conductive portions of the third conductive layer.