US5235199A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory with pad electrode and bit line under stacked capacitor
Assignee: Toshiba Corp
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Filing: 1992-02-07
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Granted: 1993-08-10
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Expires: 2012-02-07
Abstract
Abstract A semiconductor memory has many memory cells each comprising a transistor and a capacitor. In each memory cell, one of the source and drain regions of the transistor is connected to a bit line. The bit line is formed above the transistor. The capacitor comprises a first capacitor electrode formed on a substrate and a second capacitor electrode formed on an insulation film coated on the surface of the first capacitor electrode. The first capacitor electrode is connected to the other of the source and drain regions of the transistor. The first capacitor electrode is formed above the bit line. To manufacture such a semiconductor memory, each memory cell region is separately formed on the surface of a substrate. A gate insulation film is formed on the memory cell region. A gate electrode is formed on the gate insulation film. The gate electrode is used as a mask to dope the substrate with impurities to form source and drain regions of a transistor. A bit line is formed and connected to one of the source and drain regions. A first capacitor electrode is formed above the bit line and connected to the other of the source and drain regions. An insulation film is formed on the surface of the first capacitor electrode, and a second capacitor electrode is formed on the insulation film.
Inventors
- 👤 Takeshi Hamamoto
- 👤 Fumio Horiguchi
- 👤 Katsuhiko Hieda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:14
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; Y; Y10; Y10S; Y10S257/00; Y10S257/905; Y10S257/908
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
180 words
A semiconductor memory having memory cells formed on a semiconductor substrate, each memory cell composed of a transistor and a capacitor, said transistor comprising a source region, a channel region and a drain region aligned in a line and being insulated by an insulation film from an adjacent memory cell, each memory cell comprising: a pad electrode making electrical contact with one of said source and drain regions of said cell and extending over said insulation films; a bit line making electrical contact with said pad electrode above said insulation film and extending in parallel to said line and laterally remote from said one of said source and drain, said bit line and said pad electrode being electrically separated from said gate electrode; an insulating film formed on said substrate over said bit line; a first capacitor electrode formed on said insulating film connected to the other of said source and drain regions of the transistor; and a second capacitor electrode formed on said first capacitor electrode, with insulation films between said first capacitor electrode and said second capacitor electrode.
Claim 2
Dependent Claim
180 words
A semiconductor memory having memory cells formed on a semiconductor substrate, each memory cell composed of a transistor and a capacitor, said transistor comprising a source region, a channel region and a drain region aligned in a line and being insulated by an insulation film from an adjacent memory cell, each memory cell comprising: a pad electrode making electrical contact with one of said source and drain regions of said cell and extending over said insulation films; a bit line making electrical contact with said pad electrode above said insulation film and extending in parallel to said line and laterally remote from said one of said source and drain, said bit line and said pad electrode being electrically separated from said gate electrode; an insulating film formed on said substrate over said bit line; a first capacitor electrode formed on said insulating film connected to the other of said source and drain regions of the transistor; and a second capacitor electrode formed on said first capacitor electrode, with insulation films between said first capacitor electrode and said second capacitor electrode.
Claim 3
Dependent Claim
35 words
The semiconductor memory as claimed in claim 1, wherein the memory cell further comprises pad electrodes for connecting said bit line and first capacitor electrode with the source and drain regions of the transistor, respectively.
Claim 4
Dependent Claim
43 words
The semiconductor memory as claimed in claim 1, wherein said bit line is disposed on an element separation region between memory cell regions, and said bit line extends orthogonal to a word line which is composed of a gate electrode of the transistor.
Claim 5
Dependent Claim
22 words
The semiconductor memory as claimed in claim 1, wherein the transistor is a MOS transistor, and the capacitor is a MOS capacitor.
Claim 6
Dependent Claim
30 words
The semiconductor memory as claimed in claim 4, wherein one of source and drain regions of the MOS transistor extends toward the bit line to contact with the bit line.
Claim 7
Dependent Claim
36 words
The semiconductor memory as claimed in claim 4, wherein the bit line is disposed on a memory cell region and orthogonal to a word line, which is composed of a gate electrode of the MOS transistor.
Claim 8
Dependent Claim
207 words
A DRAM semiconductor device having a plurality of unit memory structure, each structure comprising: a semiconductor substrate; source and drain regions formed within said substrate; a channel region formed within said substrate and located between said source and drain regions, said source, drain and channel regions being aligned in a line and insulated by an insulation film from an adjacent unit memory structure; a gate electrode formed on said channel region through an insulating film; a pad electrode making electrical contact with one of said source and drain regions and extending over said insulation film; a bit line to make electrical contact with said pad electrode above said insulation film and extending in parallel to said line and laterally remote from said source region, said channel region and said drain region, said bit line and said pad electrode being electrically separated from said gate electrode; an insulating layer formed on said substrate over said gate electrode and said bit line; a first electrode formed on said insulating layer and making electrical contact with the other of said source and drain regions through a contact hole formed through said insulating layer; and a second electrode formed on said first electrode through an insulation film to form a capacitance.
Claim 9
Dependent Claim
207 words
A DRAM semiconductor device having a plurality of unit memory structure, each structure comprising: a semiconductor substrate; source and drain regions formed within said substrate; a channel region formed within said substrate and located between said source and drain regions, said source, drain and channel regions being aligned in a line and insulated by an insulation film from an adjacent unit memory structure; a gate electrode formed on said channel region through an insulating film; a pad electrode making electrical contact with one of said source and drain regions and extending over said insulation film; a bit line to make electrical contact with said pad electrode above said insulation film and extending in parallel to said line and laterally remote from said source region, said channel region and said drain region, said bit line and said pad electrode being electrically separated from said gate electrode; an insulating layer formed on said substrate over said gate electrode and said bit line; a first electrode formed on said insulating layer and making electrical contact with the other of said source and drain regions through a contact hole formed through said insulating layer; and a second electrode formed on said first electrode through an insulation film to form a capacitance.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1996-08-09 | 1997-02-08 | 1997-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-09 | 2001-02-08 | 2001-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-09 | 2005-02-08 | 2005-08-10 | $7700.00 | Window Closed / Lapsed |