Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
128 words
A semiconductor device comprising: a semiconductor substrate (21); a first interlayer dielectric film layer (22) formed on the semiconductor substrate (21) and having at least one first connection hole (24) at a specified position therein; a first conductive film layer (23) formed over a specified area including said at least one first connection hole (24); a second interlayer dielectric film layer (26) formed on the first conductive film layer (23) and having at least one second connection hole (25) at a specified position therein; and a second conductive film layer (27); characterized by further comprising a refractory metal film (27A) and an aluminium alloy film (27B) formed on the second interlayer dielectric film layer (26) over a specified area including said at least one second connection hole (25).
Claim 2
Dependent Claim
59 words
A semiconductor device according to claim 1, wherein the first conductive film layer (23) comprises a refractory metal film (23A) alloyed with the semiconductor substrate, a nitride film of the refractory metal formed on the refractory metal film, an aluminium alloy film (23B) formed on the nitride film, and an anti-reflection film (23C) formed on the aluminium alloy film.
Claim 3
Dependent Claim
69 words
A semiconductor device according to claim 1, wherein the first conductive film layer comprises a first refractory metal film alloyed with the semiconductor substrate, a nitride of the first refractory metal formed on the first refractory metal film, a second refractory metal film formed on the nitride film, an aluminium alloy film formed on the second refractory metal film, and an anti-reflection film formed on the aluminium alloy film.
Claim 4
Dependent Claim
39 words
A semiconductor device according to any one of claims 1, 2 or 3, wherein the second conductive film layer (27) is an aluminium alloy film (27B), and the refractory metal film (27A) alloyed with the aluminium alloy film (27B).
Claim 5
Independent Claim
112 words
A method of fabricating a semiconductor device comprising: forming a first interlayer dielectric film layer (22) on a semiconductor substrate (21), forming at least one first connection hole (24) in the first interlayer dielectric film layer to expose the semiconductor substrate, and removing oxide film from the exposed surface of the semiconductor substrate; characterized by further comprising: forming a barrier metal film (23A), an aluminium alloy film (23B) and an anti-reflection film (23C) over a region including at least the exposed semiconductor substrate surface, and heating the semiconductor substrate, thereby alloying the barrier metal film (23A) and aluminium alloy film (23B) and/or the aluminium alloy film (23B) and the anti-reflection film (23C).
Claim 6
Independent Claim
99 words
A method of fabricating a semiconductor device comprising: forming a first interlayer dielectric film layer (22) on a semiconductor substrate (21), forming at least one first connection hole (24) in the first interlayer dielectric film layer to expose the semiconductor substrate, removing oxide film from the exposed surface of the semiconductor substrate, forming a first conductive film layer (23) over a region including at least the semiconductor substrate surface, and forming a second interlayer dielectric film layer (26) on the semiconductor substrate surface, characterized in that the second interlayer dielectric film layer comprises three layers of silicon oxide film.
Claim 7
Dependent Claim
37 words
A method of fabricating a semiconductor device according to claim 6, wherein the intermediate layer of said three layers of silicon oxide film in the second interlayer dielectric film layer is silica which is applied by spinning.
Claim 8
Independent Claim
145 words
A method of fabricating a semiconductor device comprising: forming a first interlayer dielectric film layer (22) on a semiconductor substrate (21), forming at least one first connection hole (24) in the first interlayer dielectric film layer to expose the semiconductor substrate, removing oxide film from the exposed surface of the semiconductor substrate, forming a first conductive film layer (23) over a region including at least the semiconductor substrate surface, forming a second interlayer dielectric film layer (26) on the semiconductor substrate, forming at least one second connection hole (25) in the second interlayer dielectric film layer (26) to expose the first conductive film layer; removing oxide film from the first conductive film layer; forming a second conductive film layer (27) over a region including at least the at least one second connection hole (25) without first exposing to the air; and heating the semiconductor substrate.
Claim 9
Dependent Claim
38 words
A method of fabricating a semiconductor device according to claim 8, wherein the second conductive film layer (27) comprises a lower layer of a refractory metal film (27A) and an upper layer of an aluminium alloy film (27B).
Claim 10
Dependent Claim
55 words
A method of fabricating a semiconductor device according to claim 9, wherein the heat treatment causes the refractory metal film and the aluminium alloy film to be alloyed, and also caused the refractory metal film to be alloyed with the first conductive film layer in the bottom of the at least one second connection hole.