US5036383A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having an improved bonding pad
Assignee: Toshiba Corp
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Filing: 1990-04-24
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Granted: 1991-07-30
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Expires: 2010-04-24
Abstract
Abstract A polysilicon film is formed on an Si substrate through an insulating oxide film, and a composite film constituted by oxide and nitride films is formed on the polysilicon film. A polycide layer is formed on the composite film, and a metal electrode layer serving as a bonding pad is formed on the polycide layer through a barrier metal layer.
Inventors
- 👤 Seiichi Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10W72/00; H10W72/50; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5524; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
82 words
A semiconductor device comprising: a semiconductor substrate; a first insulating layer formed on said semiconductor substrate; a polysilicon film formed on said first insulating layer; a second insulating layer formed on said polysilicon film, said second insulating layer including a composite film including oxide and nitride films; a polysilicon layer formed on said second insulating layer; and a metal electrode layer formed over said second polysilicon layer, said metal electrode layer being used as a bonding pad for bonding a wire thereon.
Claim 2
Dependent Claim
82 words
A semiconductor device comprising: a semiconductor substrate; a first insulating layer formed on said semiconductor substrate; a polysilicon film formed on said first insulating layer; a second insulating layer formed on said polysilicon film, said second insulating layer including a composite film including oxide and nitride films; a polysilicon layer formed on said second insulating layer; and a metal electrode layer formed over said second polysilicon layer, said metal electrode layer being used as a bonding pad for bonding a wire thereon.
Claim 3
Dependent Claim
20 words
A device according to claim 1, further comprising a silicide layer formed between said polysilicon layer and said metal electrode.
Claim 4
Dependent Claim
21 words
A device according to claim 2, further comprising a barrier metal layer formed between said silicide layer and said metal electrode.
Claim 5
Dependent Claim
13 words
A device according to claim 2, wherein said silicide layer comprises molybdenum silicide.
Claim 6
Dependent Claim
21 words
A device according to claim 1, further comprising a barrier metal layer formed between said polysilicon layer and said metal electrode.
Claim 7
Dependent Claim
90 words
A semiconductor device comprising: a semiconductor substrate; an insulating layer formed on said semiconductor substrate; a first polysilicon layer formed on said insulating layer; a composite film formed on said first polysilicon layer, said composite film including oxide and nitride films; a polycide layer formed on said composite film; an interlevel insulator formed over said insulating layer and said polycide layer; a second polysilicon layer formed on said interlevel insulator; and a metal electrode layer, formed over said second polysilicon layer, constituting a bonding pad for bonding a wire thereon.
Claim 8
Dependent Claim
90 words
A semiconductor device comprising: a semiconductor substrate; an insulating layer formed on said semiconductor substrate; a first polysilicon layer formed on said insulating layer; a composite film formed on said first polysilicon layer, said composite film including oxide and nitride films; a polycide layer formed on said composite film; an interlevel insulator formed over said insulating layer and said polycide layer; a second polysilicon layer formed on said interlevel insulator; and a metal electrode layer, formed over said second polysilicon layer, constituting a bonding pad for bonding a wire thereon.
Claim 9
Dependent Claim
23 words
A device according to claim 6, further comprising a barrier metal layer formed between said second polysilicon layer and said metal electrode layer.
Claim 10
Dependent Claim
31 words
A device according to claim 6, wherein said polycide layer comprises: a third polysilicon layer formed on said composite film; and a molybdenum silicide layer formed on said third polysilicon layer.
Claim 11
Dependent Claim
66 words
A semiconductor device comprising: a semiconductor substrate; an insulating layer formed on said semiconductor substrate; a polysilicon film formed on said insulating layer; a composite film formed on said polysilicon film, said composite film including oxide and nitride films; a polycide layer formed on said composite film; and a metal electrode layer, formed over said polycide layer, constituting a bonding pad for bonding a wire thereon.
Claim 12
Dependent Claim
66 words
A semiconductor device comprising: a semiconductor substrate; an insulating layer formed on said semiconductor substrate; a polysilicon film formed on said insulating layer; a composite film formed on said polysilicon film, said composite film including oxide and nitride films; a polycide layer formed on said composite film; and a metal electrode layer, formed over said polycide layer, constituting a bonding pad for bonding a wire thereon.
Claim 13
Dependent Claim
91 words
A semiconductor device comprising: a semiconductor substrate; an insulating layer formed on said semiconductor substrate; first polysilicon layer formed on said insulating layer; a composite film formed on said first polysilicon layer, said composite film including oxide and nitride films; a second polysilicon layer formed on said composite film; an interlevel insulator formed over said insulating layer and said second polysilicon layer; a third polysilicon layer formed on said interlevel insulator; and a metal electrode layer, formed over said third polysilicon layer, constituting a bonding pad for bonding a wire thereon.
Claim 14
Dependent Claim
91 words
A semiconductor device comprising: a semiconductor substrate; an insulating layer formed on said semiconductor substrate; first polysilicon layer formed on said insulating layer; a composite film formed on said first polysilicon layer, said composite film including oxide and nitride films; a second polysilicon layer formed on said composite film; an interlevel insulator formed over said insulating layer and said second polysilicon layer; a third polysilicon layer formed on said interlevel insulator; and a metal electrode layer, formed over said third polysilicon layer, constituting a bonding pad for bonding a wire thereon.
Claim 15
Dependent Claim
22 words
A device according to claim 10, further comprising a barrier metal layer formed between said third polysilicon layer and said metal electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-07-29 | 1995-01-28 | 1995-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-29 | 1999-01-28 | 1999-07-30 | $3760.00 | Window Closed / Lapsed |
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