US4276557A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated semiconductor circuit structure and method for making it
Assignee: AT&T Inc
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Filing: 1978-12-29
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Granted: 1981-06-30
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Expires: 1998-12-29
Abstract
Abstract The compounds TiSi 2 and TaSi 2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
Inventors
- 👤 Hyman J. Levinstein
- 👤 Shyam P. Murarka
- 👤 Ashok K. Sinha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:37
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10P; H10P14/00; H10P14/40; H10P14/416; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; Y; Y10; Y10S; Y10S148/00; Y10S148/14
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
80 words
A semiconductor arrangement comprising a semiconductor chip including a single crystal semiconductor layer, a first electrically-insulating SiO 2 layer overlying said semiconductor layer, a layer of doped polysilicon having a thickness greater than 2000 Angstrom units overlying said first SiO 2 layer, a first layer of electrically-conducting material overlying said polysilicon layer, said electrically-conducting material being taken from a class consisting of TiSi 2 and TaSi 2 and an unpatterned second layer of SiO 2 overlying said first electrically-conducting layer.
Claim 2
Dependent Claim
80 words
A semiconductor arrangement comprising a semiconductor chip including a single crystal semiconductor layer, a first electrically-insulating SiO 2 layer overlying said semiconductor layer, a layer of doped polysilicon having a thickness greater than 2000 Angstrom units overlying said first SiO 2 layer, a first layer of electrically-conducting material overlying said polysilicon layer, said electrically-conducting material being taken from a class consisting of TiSi 2 and TaSi 2 and an unpatterned second layer of SiO 2 overlying said first electrically-conducting layer.
Claim 3
Dependent Claim
18 words
An arrangement in accordance with claim 1 wherein said semiconductor layer comprises an epitaxially grown layer of silicon.
Claim 4
Dependent Claim
37 words
An arrangement in accordance with claim 2 wherein said chip also comprises a second layer of electrically-conducting material overlying said patterned second layer of SiO 2 and forming through connections to said first layer of electrically-conducting material.
Claim 5
Dependent Claim
16 words
An arrangement in accordance with claim 3 wherein said second layer of electrically-conducting material comprises aluminum.
Claim 6
Dependent Claim
19 words
An arrangement in accordance with claim 2 wherein said polysilicon layer has a thickness in excess of 1000 Angstroms.
Claim 7
Dependent Claim
25 words
An arrangement in accordance with claim 4 wherein said first layer of electrically-conducting material has a thickness of between about 2000 Angstroms and 5000 Angstroms.
Claim 8
Dependent Claim
16 words
A semiconductor device in accordance with claim 6 wherein said insulating layers comprise SiO 2 .
References Cited (Backward Citations)
US4180596A
Cited
US4128670A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-29 | 1984-12-29 | 1985-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-29 | 1988-12-29 | 1989-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-29 | 1992-12-29 | 1993-06-30 | $7700.00 | Window Closed / Lapsed |