US4823181A
Expired / Lapsed
US
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Programmable low impedance anti-fuse element
Assignee: Microsemi SoC Corp
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Filing: 1986-05-09
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Granted: 1989-04-18
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Expires: 2006-05-09
Abstract
Abstract An electrically programmable low impedance circuit element is disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically programmable low impedance circuit element of the present invention includes a lower conductive electrode which may be formed of a metal or semiconductor material, an insulating layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide. An upper electrode formed of a metal or of a semiconductor material of the same conductivity type of the lower electrode or a sandwich of both completes the structure.
Inventors
- 👤 Amr M. Mohsen
- 👤 Esmat Z. Hamdy
- 👤 John L. McCullum
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:37
CPC Classifications
H; H10; H10B; H10B20/00; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
66 words
An electrically programmable semiconductor device comprising a plurality of elements each of which comprises a first electrode, a second electrode, a multilayer dielectric comprising at least two dielectric layers of different dielectric constant disposed between the first electrode and the second electrode, and wherein at least one element has a conductive filament passing through the multilayer dielectric ohmically connecting the first electrode to the second electrode.
Claim 2
Dependent Claim
66 words
An electrically programmable semiconductor device comprising a plurality of elements each of which comprises a first electrode, a second electrode, a multilayer dielectric comprising at least two dielectric layers of different dielectric constant disposed between the first electrode and the second electrode, and wherein at least one element has a conductive filament passing through the multilayer dielectric ohmically connecting the first electrode to the second electrode.
Claim 3
Dependent Claim
92 words
A plurality of electrically-programmable lowimpedance anti-fuse elements, each of said elements including: a semiconductor substrate, a first electrode comprising a heavily-doped region disposed within a selected portion of said substrate, an insulator covering said heavily-doped region, said insulator having a first layer of silicon dioxide, and a second layer of silicon nitride over said first layer, and a second electrode comprising a heavily-doped polysilicon layer over said insulating layer, at least one of said elements further including a conductive filament in said insulator electrically connecting said first electrode and said second electrode.
Claim 4
Dependent Claim
92 words
A plurality of electrically-programmable lowimpedance anti-fuse elements, each of said elements including: a semiconductor substrate, a first electrode comprising a heavily-doped region disposed within a selected portion of said substrate, an insulator covering said heavily-doped region, said insulator having a first layer of silicon dioxide, and a second layer of silicon nitride over said first layer, and a second electrode comprising a heavily-doped polysilicon layer over said insulating layer, at least one of said elements further including a conductive filament in said insulator electrically connecting said first electrode and said second electrode.
Claim 5
Dependent Claim
29 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 2, each of said elements further including a third layer of silicon dioxide over said second layer in said insulator.
Claim 6
Dependent Claim
31 words
The plurality of electrically-programmable, low-impedance anti-fuse elements of claim 2, wherein said substrate is P-type and said heavily-doped region and said heavily-doped polysilicon layer are N-type and are doped with arsenic.
Claim 7
Dependent Claim
42 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 4, wherein said heavily-doped region is doped to a concentration of from 1×10 19 to 1×10 21 atoms/cm 3 and said heavily-doped polysilicon region has a sheet resistance of from approximately 10-100 ohms/square.
Claim 8
Dependent Claim
55 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 3, wherein said first layer has a thickness in the range of from 20 to 50 Å, said second layer has a thickness in the range from 40 to 100 Å, and said third layer has a thickness in the range from 0 to 50 Å.
Claim 9
Dependent Claim
29 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 6, wherein said substrate is P type and said heavily-doped region and said heavily-doped polysilicon region are doped with arsenic.
Claim 10
Dependent Claim
44 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 7, wherein said heavily-doped region is doped to a concentration of from 1×10 19 to 1×10 21 atoms/cm 3 and said heavily-doped polysilicon region has a sheet resistance of from approximately 10 to 100 ohms/square.
Claim 11
Dependent Claim
115 words
A plurality of electrically-programmable low-impedance anti-fuse elements disposed on a first insulator over a semiconductor substrate, each of said elements including: a first electrode, including a heavily-doped polysilicon layer over said first insulator, and a metal silicide layer over said polysilicon layer, a second insulator over said metal silicide layer, said second insulator having a first layer of silicon dioxide and a second layer of silicon nitride over said first layer, a barrier metal layer over said second insulator, and a second electrode comprised of a metal over said barrier metal layer, at least one of said elements further including a conductive filament in said second insulator electrically connecting said first electrode in second electrode.
Claim 12
Dependent Claim
115 words
A plurality of electrically-programmable low-impedance anti-fuse elements disposed on a first insulator over a semiconductor substrate, each of said elements including: a first electrode, including a heavily-doped polysilicon layer over said first insulator, and a metal silicide layer over said polysilicon layer, a second insulator over said metal silicide layer, said second insulator having a first layer of silicon dioxide and a second layer of silicon nitride over said first layer, a barrier metal layer over said second insulator, and a second electrode comprised of a metal over said barrier metal layer, at least one of said elements further including a conductive filament in said second insulator electrically connecting said first electrode in second electrode.
Claim 13
Dependent Claim
25 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 9, wherein said polysilicon layer has a sheet resistance of from approximately 10 to 100 ohms/square.
Claim 14
Dependent Claim
31 words
The plurality of electrically-programmable low impedance anti-fuse elements of claim 9, each of said elements further including a third layer of silicon dioxide over said second layer in said second insulator.
Claim 15
Dependent Claim
18 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 11, wherein said polysilicon layer is doped with arsenic.
Claim 16
Dependent Claim
57 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 12, wherein said first layer of silicon dioxide has a thickness of from 10 to 50 Å said second layer of silicon nitride has a thickness of from 40 to 100 Å, and said third layer of silicon dioxide has a thickness of from 0 to 50 Å.
Claim 17
Dependent Claim
50 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 13, wherein said polysilicon layer has a thickness of between 500 to 10,000 Å, and said silicide layer has a thickness of from 100 to 5,000 Å, and wherein said barrier metal has a thickness of from 50 to 5,000 Å.
Claim 18
Dependent Claim
123 words
A plurality of electrically programmable low-impedance anti-fuse elements disposed on a first insulator over a semiconductor substrate, each of said elements including: a first electrode comprised of a metal layer over said first insulator and a layer of barrier metal over said metal layer, a metal silicide layer over said first electrode, a second insulator over said metal silicide layer, said second insulator having a first layer of silicon dioxide and a second layer of silicon nitride over said first layer, a barrier metal layer over second insulator, and a second electrode comprised of a metal over said barrier metal layer, at least one of said elements further including a conductive filament in said insulator electrically connecting said first electrode and second electrode.
Claim 19
Dependent Claim
123 words
A plurality of electrically programmable low-impedance anti-fuse elements disposed on a first insulator over a semiconductor substrate, each of said elements including: a first electrode comprised of a metal layer over said first insulator and a layer of barrier metal over said metal layer, a metal silicide layer over said first electrode, a second insulator over said metal silicide layer, said second insulator having a first layer of silicon dioxide and a second layer of silicon nitride over said first layer, a barrier metal layer over second insulator, and a second electrode comprised of a metal over said barrier metal layer, at least one of said elements further including a conductive filament in said insulator electrically connecting said first electrode and second electrode.
Claim 20
Dependent Claim
58 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 15, wherein said first electrode has a metal layer having a thickness of from 5,000 to 15,000 Åand a barrier metal layer having a thickness of from 50 to 5,000 5 Å, and a silicide layer over said first electrode having a thickness of from 100 to 5000 Å.
Claim 21
Dependent Claim
30 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 15, each of said elements further including a third layer of silicon dioxide over said second layer in said second insulator.
Claim 22
Dependent Claim
56 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 17, wherein said first layer of silicon dioxide has a thickness of from 20 to 50 Å, said second layer of silicon nitride has a thickness of from 40 to 100 Åand said third layer of silicon dioxide has a thickness of from 0 to 50 Å.
Claim 23
Dependent Claim
41 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 18, wherein said second electrode has a barrier metal layer having a thickness of between 50 to 5,000 Å, and a metal layer having a thickness of from 5,000 to 15,000 Å.
Claim 24
Dependent Claim
125 words
A plurality of electrically-programmable, low-impedance anti-fuse elements, each of said elements including: a semiconductor substrate, a first electrode comprising a heavily-doped region disposed within a selected portion of said substrate, an insulator covering said heavily-doped region, said insulator having a first layer of silicon dioxide, having a thickness in the range of approximately 20-45Å, a second layer of silicon nitride over said first layer having a thickness in the range of approximately 45-80↑, and a third layer of silicon dioxide having a thickness in the range of approximately 1-20Å, and, a second electrode comprising a heavily-doped polysilicon layer over said insulating layer, at least one of said elements further including a conductive filament in said insulator electrically connecting said first electrode and said second electrode.
Claim 25
Dependent Claim
125 words
A plurality of electrically-programmable, low-impedance anti-fuse elements, each of said elements including: a semiconductor substrate, a first electrode comprising a heavily-doped region disposed within a selected portion of said substrate, an insulator covering said heavily-doped region, said insulator having a first layer of silicon dioxide, having a thickness in the range of approximately 20-45Å, a second layer of silicon nitride over said first layer having a thickness in the range of approximately 45-80↑, and a third layer of silicon dioxide having a thickness in the range of approximately 1-20Å, and, a second electrode comprising a heavily-doped polysilicon layer over said insulating layer, at least one of said elements further including a conductive filament in said insulator electrically connecting said first electrode and said second electrode.
Claim 26
Dependent Claim
31 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 20, wherein said substrate is P-type and said heavily-doped region and said heavily-doped polysilicon layer are N-type and are doped with arsenic.
Claim 27
Dependent Claim
42 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 21, wherein said heavily-doped region is doped to a concentration of from 1×10 19 to 1×10 21 atoms/cm 3 and said heavily-doped polysilicon region has a sheet resistance of from approximately 10-100 ohms/square.
Claim 28
Dependent Claim
147 words
A plurality of electrically-programmable low-impedance anti-fuse elements disposed on a first insulator over a semiconductor substrate, each of said elements including: a first electrode, including a heavily-doped polysilicon layer over said first insulator, and a metal silicide layer over said polysilicon layer, a second insulator over said metal silicide layer, said insulator having a first layer of silicon dioxide, having a thickness in the range of approximately 20-45Å, a second layer of silicon nitride over said first layer having a thickness in the range of approximately 45-80Å, and a third layer of silicon dioxide having a thickness in the range of approximately 1-20Å, a barrier metal layer over said second insulator, and a second electrode comprised of a metal over said barrier metal layer, at least of one said elements further including a conductive filament in said second insulator electrically connecting said first electrode in second electrode.
Claim 29
Dependent Claim
147 words
A plurality of electrically-programmable low-impedance anti-fuse elements disposed on a first insulator over a semiconductor substrate, each of said elements including: a first electrode, including a heavily-doped polysilicon layer over said first insulator, and a metal silicide layer over said polysilicon layer, a second insulator over said metal silicide layer, said insulator having a first layer of silicon dioxide, having a thickness in the range of approximately 20-45Å, a second layer of silicon nitride over said first layer having a thickness in the range of approximately 45-80Å, and a third layer of silicon dioxide having a thickness in the range of approximately 1-20Å, a barrier metal layer over said second insulator, and a second electrode comprised of a metal over said barrier metal layer, at least of one said elements further including a conductive filament in said second insulator electrically connecting said first electrode in second electrode.
Claim 30
Dependent Claim
25 words
The plurality of electrically-programmable low-impedance anti-fuse elements of claim 23, wherein said polysilicon layer has a sheet resistance of from approximately 10 to 100 ohms/square.
Claim 31
Dependent Claim
19 words
The plurality of electrically-programmable low impedance anti-fuse elements of claim 23, wherein said polysilicon layer is doped with arsenic.
Claim 32
Dependent Claim
58 words
The plurality of electrically-programmable low impedance anti-fuse elements of claim 25, wherein said polysilicon layer has a thickness in the range of approximately 500 to 10,000Å, and said silicide layer has a thickness in the range of approximately from 100 to 5,000Å, and wherein said barrier metal has a thickness in the range of approximately 50 to 5,000Å.
Claim 33
Dependent Claim
155 words
A plurality of electrically-programmable low impedance anti-fuse elements disposed on a first insulator over a semiconductor substrate, each of said elements including: a first electrode comprised of a metal layer over said first insulator and a layer of barrier metal over said metal layer, a metal silicide layer over said first electrode, a second insulator over said metal silicide layer, said insulator having a first layer of silicon dioxide, having a thickness in the range of approximately 20-45Å, a second layer of silicon nitride over said first layer having a thickness in the range of approximately 45-80Å, and a third layer of silicon dioxide having a thickness in the range of approximately 1-20Å, a barrier metal layer over second insulator, and a second electrode comprised of a metal over said barrier metal layer, at least one of said elements further including a conductive filament in said insulator electrically connecting said first electrode and second electrode.
Claim 34
Dependent Claim
155 words
A plurality of electrically-programmable low impedance anti-fuse elements disposed on a first insulator over a semiconductor substrate, each of said elements including: a first electrode comprised of a metal layer over said first insulator and a layer of barrier metal over said metal layer, a metal silicide layer over said first electrode, a second insulator over said metal silicide layer, said insulator having a first layer of silicon dioxide, having a thickness in the range of approximately 20-45Å, a second layer of silicon nitride over said first layer having a thickness in the range of approximately 45-80Å, and a third layer of silicon dioxide having a thickness in the range of approximately 1-20Å, a barrier metal layer over second insulator, and a second electrode comprised of a metal over said barrier metal layer, at least one of said elements further including a conductive filament in said insulator electrically connecting said first electrode and second electrode.
Claim 35
Dependent Claim
68 words
The plurality of electrically-programmable low impedance anti-fuse elements of claim 27, wherein said first electrode has a metal layer having a thickness in the range of from approximately 5,000 to 15,000Å and a barrier metal layer having a thickness in the range of from approximately 50 to 5,000Å, and a silicide layer over said first electrode having a thickness in the range of from approximately 100 to 5000Å.
Claim 36
Dependent Claim
48 words
The plurality of electrically programmable low-impedance anti-fuse elements of claim 27, wherein said second electrode has a barrier metal layer having a thickness in the range of from approximately 50 to 5,000Å, and a metal layer having a thickness in the range of from approximately 5,000 to 15,000Å.
References Cited (Backward Citations)
US2784389A
Cited
US3423646A
Cited
US3634929A
Cited
US3576549A
Cited
US3838442A
Cited
US3742592A
Cited
US3781977A
Cited
US4494135A
Cited
US4127900A
Cited
US4621277A
Cited
US4257832A
Cited
US4322822A
Cited
US4507673A
Cited
US4499557A
Cited
US4445134A
Cited
US4398335A
Cited
US4488262A
Cited
US4455568A
Cited
US4507757A
Cited
US4507756A
Cited
US4562639A
Cited
US4507851A
Cited
US4543594A
Cited
US4505026A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |