US4543594A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fusible link employing capacitor structure
Assignee: Intel Corp
•
Filing: 1985-03-27
•
Granted: 1985-09-24
•
Expires: 2005-03-27
Abstract
Abstract A capacitor-like MOS structure which provides a fusible link useful in a ROM, redundancy circuit, or the like is disclosed. An oxide layer insulates a polysilicon electrode from a doped substrate region. A potential is applied between the electrode and the doped region of sufficient magnitude to cause the oxide to rupture and to cause permanent filaments to be formed within the oxide. The filaments provide permanent conductive links between the polysilicon electrode and the doped substrate region.
Inventors
- 👤 Amr M. Mohsen
- 👤 Dwight L. Crook
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
158 words
In an integrated circuit formed on a silicon substrate, an apparatus for providing a discretionary, permanent electrical connection, comprising: an insulative layer between 50-150A thick and having an area between 10 to 500 (micro m) 2 disposed on said substrate; an electrode formed of polysilicon material only formed on said insulative layer and insulated from said substrate; a first doped substrate region of a first conductivity type disposed in said substrate beneath said electrode; a second substrate region of said first conductivity type disposed in alignment with said electrode and being contiguous with said first region; circuit means for selectively applying a potential between said electrode and said second layer of sufficient magnitude to permanently deform said insulative layer such that a permanent polysilicon electrical connection is formed between said electrode and said second region, said circuit means comprising a source of DC potential between 10 to 20 volts and a current limiting resistor of approximately 1000 ohms.
Claim 2
Dependent Claim
158 words
In an integrated circuit formed on a silicon substrate, an apparatus for providing a discretionary, permanent electrical connection, comprising: an insulative layer between 50-150A thick and having an area between 10 to 500 (micro m) 2 disposed on said substrate; an electrode formed of polysilicon material only formed on said insulative layer and insulated from said substrate; a first doped substrate region of a first conductivity type disposed in said substrate beneath said electrode; a second substrate region of said first conductivity type disposed in alignment with said electrode and being contiguous with said first region; circuit means for selectively applying a potential between said electrode and said second layer of sufficient magnitude to permanently deform said insulative layer such that a permanent polysilicon electrical connection is formed between said electrode and said second region, said circuit means comprising a source of DC potential between 10 to 20 volts and a current limiting resistor of approximately 1000 ohms.
Claim 3
Dependent Claim
13 words
The apparatus defined by claim 1 wherein said insulative layer comprises silicon dioxide.
References Cited (Backward Citations)
US3646305A
Cited
US3634929A
Cited
US3576549A
Cited
US3781977A
Cited
US3787822A
Cited
US3717852A
Cited
US4072976A
Cited
US4322736A
Cited
US4375086A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-23 | 1989-03-25 | 1989-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-23 | 1993-03-25 | 1993-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-23 | 1997-03-25 | 1997-09-24 | $7700.00 | Window Closed / Lapsed |