Manufacturing method of contact hole arrangement of a semiconductor device

Claim 1

A method of manufacturing a semiconductor device comprising: a first step of forming first and second oxide film regions respectively at first and second locations on a surface of a semiconductor substrate of a first type of conductivity, said first and second oxide film regions defining a first direction therebetween; a second step of forming a first impurity diffusion region of a second type of conductivity extending a first distance in said first direction between said first and second oxide film regions along said surface of said semiconductor substrate and spaced from said second oxide film region and directly adjacent said first oxide film region; a third step of forming a first insulation film on said surface of said semiconductor substrate to cover at least said first oxide film region and said first impurity diffusion region; a fourth step of forming a contact hole, which extends a second distance in said first direction in said first insulation film, by removing a continuous portion of said insulation film which extends over a portion of said first impurity diffusion region and an adjacent edge portion of said first oxide film region, and by removing said adjacent edge portion of said first oxide film region; a fifth step of forming a conductive film on at least a bottom surface of said contact hole, said bottom surface extending said second distance in said first direction; a sixth step of forming a second impurity diffusion region, extending a third distance in said first direction along said surface of said semiconductor substrate and partially overlapping said first impurity diffusion region, by introducing impurities of the second type of conductivity into said semiconductor substrate through said conductive film, said third distance being greater than each of said first and second distances; and, a seventh step of forming a wiring layer in contact with said conductive layer.

Claim 2

A method of manufacturing a semiconductor device comprising: a first step of forming first and second oxide film regions respectively at first and second locations on a surface of a semiconductor substrate of a first type of conductivity, said first and second oxide film regions defining a first direction therebetween; a second step of forming a first impurity diffusion region of a second type of conductivity extending a first distance in said first direction between said first and second oxide film regions along said surface of said semiconductor substrate and spaced from said second oxide film region and directly adjacent said first oxide film region; a third step of forming a first insulation film on said surface of said semiconductor substrate to cover at least said first oxide film region and said first impurity diffusion region; a fourth step of forming a contact hole, which extends a second distance in said first direction in said first insulation film, by removing a continuous portion of said insulation film which extends over a portion of said first impurity diffusion region and an adjacent edge portion of said first oxide film region, and by removing said adjacent edge portion of said first oxide film region; a fifth step of forming a conductive film on at least a bottom surface of said contact hole, said bottom surface extending said second distance in said first direction; a sixth step of forming a second impurity diffusion region, extending a third distance in said first direction along said surface of said semiconductor substrate and partially overlapping said first impurity diffusion region, by introducing impurities of the second type of conductivity into said semiconductor substrate through said conductive film, said third distance being greater than each of said first and second distances; and, a seventh step of forming a wiring layer in contact with said conductive layer.