Abstract The invention provides a semiconductor device and manufacturing method therefor which comprises: a semiconductor substrate of a first conductivity type, source and drain regions of a second conductivity type provided on the surface of the substrate in a mutually electrically isolated arrangement, and a gate electrode provided on the surface of the substrate on the other side of an insulating film and the substrate surface including a channel region between these aforementioned regions; at least the drain region, of which the source and drain regions, consisting of: a first impurity diffusion region provided on the substrate surface in the vicinity of the end portion of the gate electrode; a second impurity diffusion region more highly doped than the first impurity diffusion region and provided in at least a portion of the surface of the aforementioned diffusion region adjacent the end portion of this first impurity diffusion region; and a third impurity diffusion region more highly doped than the second impurity diffusion region and provided on the substrate surface adjacent to the end portion of this second impurity diffusion region.
A method of manufacturing a semiconductor device, comprising the steps of: selectively forming a field insulating film on a semiconductor substrate of a first conductive type; forming a gate insulating film on said semiconductor substrate surface, followed by formation of a gate electrode; forming a first impurity diffusion region of a second conductive type in said semiconductor substrate surface, using said gate electrode as a mask using a relatively low dose of a first impurity of second conductive type; forming a second impurity diffusion region of a second conductive type, inside of the edge of said first impurity diffusion region using said gate electrode as a mask, and conductive type having a smaller diffusion coefficient than that of said first impurity; forming an insulating film on the lateral surface of said gate electrode after the formation of said first and second impurity diffusion regions; and forming a third impurity diffusion region of a second conductive type having a higher concentration than said second impurity diffusion region using said insulating film as a mask.
Claim 2
Independent Claim
173 words
A method of manufacturing a semiconductor device, comprising the steps of: selectively forming a field insulating film on a semiconductor substrate of a first conductive type; forming a gate insulating film on said semiconductor substrate surface, followed by formation of a gate electrode; forming a first impurity diffusion region of a second conductive type in said semiconductor substrate surface, using said gate electrode as a mask using a relatively low dose of a first impurity of second conductive type; forming a second impurity diffusion region of a second conductive type, inside of the edge of said first impurity diffusion region using said gate electrode as a mask, and conductive type having a smaller diffusion coefficient than that of said first impurity; forming an insulating film on the lateral surface of said gate electrode after the formation of said first and second impurity diffusion regions; and forming a third impurity diffusion region of a second conductive type having a higher concentration than said second impurity diffusion region using said insulating film as a mask.
Claim 3
Dependent Claim
22 words
A method of manufacturing a semiconductor device according to claim 1, wherein said gate electrode is made from a polycrystalline silicon film.
Claim 4
Dependent Claim
26 words
A method of manufacturing a semiconductor device according to claim 1, wherein said first impurity diffusion region is formed by activation by implantation of phosphorus ions.
Claim 5
Dependent Claim
28 words
A method of manufacturing a semiconductor device according to claim 3, wherein said second and third impurity diffusion regions are formed by activation by implantation of arsenic ions.