US9135958B2
Active / In Force
US
⏱️ 7.7 years remaining
Semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2014-08-05
•
Granted: 2015-09-15
•
Expires: 2034-08-05
Abstract
Abstract An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Jun Koyama
- 👤 Kiyoshi Kato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:37
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/10; G11C11/00; G11C11/21; G11C11/24; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0433; G11C16/06; G11C16/26; G11C16/28; G11C5/00; G11C5/06; G11C5/14; G11C5/147; G11C7/12; G11C7/18; G11C7/22; G11C8/00; G11C8/08; H01L21/02554; H01L21/02565; H01L21/02631; H01L27/0688; H01L27/105; H01L27/108; H01L27/11551; H01L27/1156; H01L27/1225; H01L29/22; H01L29/26; H01L29/7869; H; H10; H10B; H10B12/00; H10B41/00; H10B41/20; H10B41/70; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6755; H10D30/6758; H10D62/00; H10D62/80; H10D62/86; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D86/00; H10D86/40; H10D86/421; H10D86/423; H10D86/60; H10D87/00; H10D88/00; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3426; H10P14/3434; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/43; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4097; H01L27/115; H10B69/00
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
159 words
A semiconductor device comprising: a first transistor comprising: a channel formation region comprising a semiconductor; a first gate insulating layer overlapping the channel formation region; and a first gate electrode over the first gate insulating layer; an insulating layer over the first transistor; a second transistor over the insulating layer, the second transistor being a dual gate type transistor and comprising: an oxide semiconductor layer; a source electrode and a drain electrode each in direct contact with a top surface of the oxide semiconductor layer; a second gate insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode; a second gate electrode overlapping the oxide semiconductor layer, the drain electrode, the source electrode, and the second gate insulating layer; and a third gate electrode overlapping with and being below the oxide semiconductor layer and the second gate electrode, wherein the oxide semiconductor layer is electrically connected to the first gate electrode of the first transistor.
Claim 2
Dependent Claim
159 words
A semiconductor device comprising: a first transistor comprising: a channel formation region comprising a semiconductor; a first gate insulating layer overlapping the channel formation region; and a first gate electrode over the first gate insulating layer; an insulating layer over the first transistor; a second transistor over the insulating layer, the second transistor being a dual gate type transistor and comprising: an oxide semiconductor layer; a source electrode and a drain electrode each in direct contact with a top surface of the oxide semiconductor layer; a second gate insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode; a second gate electrode overlapping the oxide semiconductor layer, the drain electrode, the source electrode, and the second gate insulating layer; and a third gate electrode overlapping with and being below the oxide semiconductor layer and the second gate electrode, wherein the oxide semiconductor layer is electrically connected to the first gate electrode of the first transistor.
Claim 3
Dependent Claim
16 words
The semiconductor device according to claim 1 , wherein the first transistor is a p-type transistor.
Claim 4
Dependent Claim
25 words
The semiconductor device according to claim 1 , further comprising: a substrate including the semiconductor, wherein the channel formation region is included in the substrate.
Claim 5
Dependent Claim
21 words
The semiconductor device according to claim 3 , wherein the substrate is a single crystal semiconductor substrate or an SOI substrate.
Claim 6
Dependent Claim
21 words
The semiconductor device according to claim 1 , wherein the oxide semiconductor layer is formed from an In—Ga—Zn—O-based oxide semiconductor material.
Claim 7
Dependent Claim
12 words
A memory element comprising the semiconductor device according to claim 1 .
Claim 8
Dependent Claim
12 words
An electronic appliance comprising the semiconductor device according to claim 1 .
Claim 9
Dependent Claim
249 words
A semiconductor device comprising: a first transistor comprising: a channel formation region comprising a semiconductor; a first gate insulating layer overlapping the channel formation region; and a first gate electrode over the first gate insulating layer; an insulating layer over the first transistor; a second transistor over the insulating layer, the second transistor being a dual gate type transistor and comprising: an oxide semiconductor layer; a source electrode and a drain electrode each in direct contact with a top surface of the oxide semiconductor layer; a second gate insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode; a second gate electrode overlapping the oxide semiconductor layer, the drain electrode, the source electrode, and the second gate insulating layer; and a third gate electrode overlapping with and being below the oxide semiconductor layer and the second gate electrode; a third transistor below the insulating layer with a channel formation region comprising the semiconductor; and a capacitor electrically connected to the first gate electrode, wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the third transistor, and the other of the source electrode and the drain electrode of the first transistor is electrically connected to the other of the source electrode and the drain electrode of the third transistor, and wherein the oxide semiconductor layer is electrically connected to the first gate electrode of the first transistor.
Claim 10
Dependent Claim
249 words
A semiconductor device comprising: a first transistor comprising: a channel formation region comprising a semiconductor; a first gate insulating layer overlapping the channel formation region; and a first gate electrode over the first gate insulating layer; an insulating layer over the first transistor; a second transistor over the insulating layer, the second transistor being a dual gate type transistor and comprising: an oxide semiconductor layer; a source electrode and a drain electrode each in direct contact with a top surface of the oxide semiconductor layer; a second gate insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode; a second gate electrode overlapping the oxide semiconductor layer, the drain electrode, the source electrode, and the second gate insulating layer; and a third gate electrode overlapping with and being below the oxide semiconductor layer and the second gate electrode; a third transistor below the insulating layer with a channel formation region comprising the semiconductor; and a capacitor electrically connected to the first gate electrode, wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the third transistor, and the other of the source electrode and the drain electrode of the first transistor is electrically connected to the other of the source electrode and the drain electrode of the third transistor, and wherein the oxide semiconductor layer is electrically connected to the first gate electrode of the first transistor.
Claim 11
Dependent Claim
159 words
The semiconductor device according to claim 8 , wherein the first to the third transistors and the capacitor belong to a memory cell, wherein the semiconductor device comprises a plurality of memory cells arranged in rows and columns, the memory cells being each similar to the memory cell, comprising first transistors, second transistors, third transistors, and capacitors arranged as in the memory cell, wherein a given column comprises a first line connected to the ones of the source electrodes and the drain electrodes of the third transistors the given columns through the channel formation regions of the corresponding first transistors, wherein the given column comprises a second line connected to the ones of the source electrodes and the drain electrodes of the first transistors of the given column through the channel formation regions of the corresponding third transistors, wherein a given row comprises a third line connected to the gate electrodes of the third transistors of the given row.
Claim 12
Dependent Claim
16 words
The semiconductor device according to claim 8 , wherein the first transistor is a p-type transistor.
Claim 13
Dependent Claim
25 words
The semiconductor device according to claim 8 , further comprising: a substrate including the semiconductor, wherein the channel formation region is included in the substrate.
Claim 14
Dependent Claim
21 words
The semiconductor device according to claim 11 , wherein the substrate is a single crystal semiconductor substrate or an SOI substrate.
Claim 15
Dependent Claim
21 words
The semiconductor device according to claim 8 , wherein the oxide semiconductor layer is formed from an In—Ga—Zn—O-based oxide semiconductor material.
Claim 16
Dependent Claim
12 words
A memory element comprising the semiconductor device according to claim 8 .
Claim 17
Dependent Claim
12 words
An electronic appliance comprising the semiconductor device according to claim 8 .
Claim 18
Dependent Claim
279 words
A semiconductor device comprising: a substrate comprising a semiconductor; a first transistor comprising: a channel formation region in the substrate; a first gate insulating layer overlapping the channel formation region; and a first gate electrode over the first gate insulating layer; an insulating layer over the first transistor; a conductive layer embedded in the insulating layer and electrically connected to the first gate electrode; a second transistor over the insulating layer, the second transistor being a dual gate type transistor and comprising: an oxide semiconductor layer; a source electrode and a drain electrode each in direct contact with a top surface of the oxide semiconductor layer; a second gate insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode; a second gate electrode overlapping the oxide semiconductor layer, the drain electrode, the source electrode, and the second gate insulating layer; and a third gate electrode overlapping with and being below the oxide semiconductor layer and the second gate electrode; a third transistor below the insulating layer with a channel formation region comprising the semiconductor; and a capacitor electrically connected to the first gate electrode, wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the third transistor, and the other of the source electrode and the drain electrode of the first transistor is electrically connected to the other of the source electrode and the drain electrode of the third transistor, and wherein one of the source electrode and the drain electrode extends so as to be in direct contact with a top surface of the conductive layer.
Claim 19
Dependent Claim
279 words
A semiconductor device comprising: a substrate comprising a semiconductor; a first transistor comprising: a channel formation region in the substrate; a first gate insulating layer overlapping the channel formation region; and a first gate electrode over the first gate insulating layer; an insulating layer over the first transistor; a conductive layer embedded in the insulating layer and electrically connected to the first gate electrode; a second transistor over the insulating layer, the second transistor being a dual gate type transistor and comprising: an oxide semiconductor layer; a source electrode and a drain electrode each in direct contact with a top surface of the oxide semiconductor layer; a second gate insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode; a second gate electrode overlapping the oxide semiconductor layer, the drain electrode, the source electrode, and the second gate insulating layer; and a third gate electrode overlapping with and being below the oxide semiconductor layer and the second gate electrode; a third transistor below the insulating layer with a channel formation region comprising the semiconductor; and a capacitor electrically connected to the first gate electrode, wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the third transistor, and the other of the source electrode and the drain electrode of the first transistor is electrically connected to the other of the source electrode and the drain electrode of the third transistor, and wherein one of the source electrode and the drain electrode extends so as to be in direct contact with a top surface of the conductive layer.
Claim 20
Dependent Claim
159 words
The semiconductor device according to claim 16 , wherein the first to the third transistors and the capacitor belong to a memory cell, wherein the semiconductor device comprises a plurality of memory cells arranged in rows and columns, the memory cells being each similar to the memory cell, comprising first transistors, second transistors, third transistors, and capacitors arranged as in the memory cell, wherein a given column comprises a first line connected to the ones of the source electrodes and the drain electrodes of the third transistors the given columns through the channel formation regions of the corresponding first transistors, wherein the given column comprises a second line connected to the ones of the source electrodes and the drain electrodes of the first transistors of the given column through the channel formation regions of the corresponding third transistors, wherein a given row comprises a third line connected to the gate electrodes of the third transistors of the given row.
Claim 21
Dependent Claim
16 words
The semiconductor device according to claim 16 , wherein the first transistor is a p-type transistor.
Claim 22
Dependent Claim
21 words
The semiconductor device according to claim 16 , wherein the substrate is a single crystal semiconductor substrate or an SOI substrate.
Claim 23
Dependent Claim
21 words
The semiconductor device according to claim 16 , wherein the oxide semiconductor layer is formed from an In—Ga—Zn—O-based oxide semiconductor material.
Claim 24
Dependent Claim
12 words
A memory element comprising the semiconductor device according to claim 16 .
Claim 25
Dependent Claim
12 words
An electronic appliance comprising the semiconductor device according to claim 16 .
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