US7061014B2 — Natural-superlattice homologous single crystal th…

Claim 1

Independent Claim 101 words

A natural-superlattice homologous single-crystal thin film comprising a complex oxide which is epitaxially grown on a ZnO epitaxial thin film, said complex oxide being expressed by the following formula: M 1 M 2 O 3 (ZnO) m , wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more and wherein said thin film has a natural-superlattice homologous single-crystal structure.

Claim 2

Dependent Claim 101 words

A natural-superlattice homologous single-crystal thin film comprising a complex oxide which is epitaxially grown on a ZnO epitaxial thin film, said complex oxide being expressed by the following formula: M 1 M 2 O 3 (ZnO) m , wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more and wherein said thin film has a natural-superlattice homologous single-crystal structure.

Claim 3

Dependent Claim 146 words

A natural-superlattice homologous single-crystal thin film comprising a complex oxide which is epitaxially grown on a ZnO epitaxial thin film, wherein said ZnO epitaxial thin film is grown on a single-crystal substrate in advance of the growth of said complex oxide, and vanished during the growth of said complex oxide to allow said epitaxially grown complex oxide to reside directly on said single-crystal substrate, wherein said complex oxide is expressed by the following formula: M 1 M 2 O 3 (ZnO) m , wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more, and wherein said thin film has a natural-superlattice homologous single-crystal structure.

Claim 4

Dependent Claim 146 words

A natural-superlattice homologous single-crystal thin film comprising a complex oxide which is epitaxially grown on a ZnO epitaxial thin film, wherein said ZnO epitaxial thin film is grown on a single-crystal substrate in advance of the growth of said complex oxide, and vanished during the growth of said complex oxide to allow said epitaxially grown complex oxide to reside directly on said single-crystal substrate, wherein said complex oxide is expressed by the following formula: M 1 M 2 O 3 (ZnO) m , wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more, and wherein said thin film has a natural-superlattice homologous single-crystal structure.

Claim 5

Dependent Claim 99 words

A natural-superlattice homologous single-crystal thin film comprising a complex oxide which is epitaxially grown on a ZnO single crystal, said complex oxide being expressed by the following formula: M 1 M 2 O 3 (ZnO) m , wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more, and wherein said thin film has natural-superlattice homologous single-crystal structure.

Claim 6

Dependent Claim 99 words

A natural-superlattice homologous single-crystal thin film comprising a complex oxide which is epitaxially grown on a ZnO single crystal, said complex oxide being expressed by the following formula: M 1 M 2 O 3 (ZnO) m , wherein M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more, and wherein said thin film has natural-superlattice homologous single-crystal structure.

Claim 7

Dependent Claim 33 words

The homologous single-crystal thin film as defined in either one of claims 1 to 3 , wherein the difference of said m in the thickness direction of said thin film is±1 or less.

Claim 8

Dependent Claim 30 words

The homologous single-crystal thin film as defined in either one of claims 1 to 3 , wherein said m is continuously changed in the thickness direction of said thin film.

Claim 9

Dependent Claim 33 words

The homologous single-crystal thin film as defined in either one of claims 1 to 3 , which includes a surface region which has atomic level smoothness and an area of 0.5 μm×0.5 μm.

Claim 10

Independent Claim 121 words

A method of producing a natural-superlattice homologous single-crystal thin film, comprising: depositing an epitaxially grown complex oxide thin film on either one of a ZnO single crystal and a ZnO epitaxial thin film, said complex oxide being expressed by the formula M 1 M 2 O 3 (ZnO) n (wherein: M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y; M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al; and n is a natural number of 1 or more), and subjecting said deposited film to a thermal anneal treatment, wherein said thin film has a natural-superlattice homologous single-crystal structure.

Claim 11

Independent Claim 121 words

A method of producing a natural-superlattice homologous single-crystal thin film, comprising: depositing an epitaxially grown complex oxide thin film on either one of a ZnO single crystal and a ZnO epitaxial thin film, said complex oxide being expressed by the formula M 1 M 2 O 3 (ZnO) n (wherein: M 1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y; M 2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al; and n is a natural number of 1 or more), and subjecting said deposited film to a thermal anneal treatment, wherein said thin film has a natural-superlattice homologous single-crystal structure.

Claim 12

Dependent Claim 35 words

The method as defined in claim 7 , wherein said thermal anneal treatment is performed while covering said deposited film with a high-melting-point compound plate to prevent the vaporization of ZnO from said deposited film.

Claim 13

Dependent Claim 31 words

The method as defined in claim 7 , wherein said thermal anneal treatment is performed under the presence of ZnO vapor to prevent the vaporization of ZnO from said deposited film.

Claim 14

Dependent Claim 24 words

An optical, X-ray optical or electronic device comprising the homologous single-crystal thin film as defined in either one of claims 1 to 3 .

Claim 15

Dependent Claim 73 words

A transparent-thin-film field-effect transistor comprising an active layer consisting of the homologous single-crystal thin film as defined in either one of claims 1 to 3 , wherein said M 1 M 2 O 3 (ZnO) m is InMO 3 (ZnO) m , wherein M is at least one selected from the group consisting of In, Fe, Ga and Al, and m is an integer in the range of 1 to less than 50.

Claim 16

Dependent Claim 25 words

The transparent-thin-film field-effect transistor as defined in claim 11 , wherein said homologous single-crystal thin film is formed on a heat-resistant transparent oxide single-crystal substrate.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2009-06-12	2009-12-12	2010-06-13	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2013-06-12	2013-12-12	2014-06-13	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2017-06-12	2017-12-12	2018-06-13	$7700.00	Window Closed / Lapsed

Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film

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