Patent FR982624A successfully refreshed from Google Patents.
US6570187B1
Expired / Lapsed
US
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Silicon light-emitting device and method for the production thereof
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 2000-02-07
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Granted: 2003-05-27
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Expires: 2020-02-07
Abstract
Abstract The invention concerns a light emitting and guiding device comprising at least one active region ( 22 ) in silicon and the means for creating photons in the said active region. In accordance with the invention, the means for creating the photons comprise a diode ( 22 c, 22 d ) formed in the active region. In addition, the device includes the means for confining the carriers injected by the diode, and the silicon in the active region is mono-crystalline.
Inventors
- 👤 Jean-Louis Pautrat
- 👤 Hélène Ulmer
- 👤 Noël Magnea
- 👤 Emmanuel Hadji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:03
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/3426; B; B82; B82Y; B82Y20/00; H01S3/00; H01S3/14; H01S3/16; H01S3/1601; H01S3/1603; H01S3/1608; H01S3/1628; H01S5/04; H01S5/041; H01S5/042; H01S5/0421; H01S5/0422; H01S5/0424; H01S5/10; H01S5/18; H01S5/183; H01S5/18305; H01S5/18397; H01S5/3027; H01S5/3031; H01S5/32; H01S5/3223; H01S5/3224; H01S5/341; H01S5/3412
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
88 words
Light emitting and guiding device comprising at least one active region ( 22 ) in silicon and the means for creating photons in the said active region, whereby the means for creating the photons comprises a diode ( 22 c , 22 d ) formed in the active region, whereby the device comprises the means for confining, with a first and a second insulator layers ( 12 , 32 ), to confine the carriers injected by the diode, and whereby the silicon in the active region is mono-crystalline.
Claim 2
Dependent Claim
88 words
Light emitting and guiding device comprising at least one active region ( 22 ) in silicon and the means for creating photons in the said active region, whereby the means for creating the photons comprises a diode ( 22 c , 22 d ) formed in the active region, whereby the device comprises the means for confining, with a first and a second insulator layers ( 12 , 32 ), to confine the carriers injected by the diode, and whereby the silicon in the active region is mono-crystalline.
Claim 3
Dependent Claim
48 words
Device according to claim 1 , for the propagation of light with a given wavelength λ, in which the assembly comprising the active region and the layers of insulator has an optical thickness e, such that: e = k λ 2 where k is a natural number.
Claim 4
Dependent Claim
20 words
Device according to claim 1 , in which the first and second layers of insulator are layers of silicon oxide.
Claim 5
Dependent Claim
42 words
Device according to claim 1 , comprising in addition to the means of reflecting light, comprising at least one mirror ( 15 , 35 ) arranged on a free face of at least one of the first and second layers of insulator.
Claim 6
Dependent Claim
64 words
Device according to claim 4 , in which the means for reflecting the light comprise a first mirror ( 15 ) arranged on the free face of the first insulator layer ( 12 ) and a second mirror ( 35 ) arranged on the free face of the second insulator layer ( 32 ), the first and second mirrors having different coefficients of transmission.
Claim 7
Dependent Claim
26 words
Device according to claim 5 , in which the first and second mirrors form, with the active region and the insulator layers, a Fabry-Pérot type cavity.
Claim 8
Dependent Claim
23 words
Device according to claim 4 , in which at least one mirror ( 15 , 35 ) comprises a stack of dielectric layers.
Claim 9
Dependent Claim
27 words
Device according to claim 1 , in which the means for creating photons in the active region comprise, moreover, an additional source of light ( 50 ).
Claim 10
Dependent Claim
14 words
Device according to claim 1 , in which the active region comprises radiative centres.
Claim 11
Dependent Claim
22 words
Device according to claim 9 , in which the radiative centres are in a material chosen from Si, Ge, SiGe and SiGeC.
Claim 12
Dependent Claim
23 words
Device according to claim 9 , in which the radiative centres comprise rare earth element impurities ( 23 ) in the active region.
Claim 13
Dependent Claim
21 words
Device according to claim 9 , in which the radiative centres comprise at least one quantum well in the active region.
Claim 14
Dependent Claim
23 words
Device according to claim 9 , in which the radiative centres comprise quantum boxes ( 29 ) spread out over the active region.
Claim 15
Dependent Claim
32 words
Device according to claim 1 , comprising a plurality of active regions ( 22 a ) between the first and second insulator layers and separated from each other by an insulator material.
Claim 16
Dependent Claim
37 words
Device according to claim 14 , in which the active regions ( 22 a ) are islands surrounded by insulator material, the islands having a characteristic size ( 1 ) more or less equal to their thickness.
Claim 17
Dependent Claim
46 words
Manufacturing process for a device according to claim 1 , whereby it comprises the transfer of a thin layer of silicon that is intended to form the active region onto a support by molecular bonding, then covering the said layer of silicon by an insulator layer.
Claim 18
Dependent Claim
76 words
Process according to claim 16 , in which the transfer of the thin layer comprises: the molecular bonding on the support of a block of thick silicon ( 20 ) by a transfer face, the block being provided with a preferential cleavage zone ( 24 ) parallel to the transfer face and which delimits the thin layer ( 22 ) then, after the bonding, the said block is cleaved to separate the thin layer from it.
Claim 19
Dependent Claim
50 words
Process according to claim 16 , in which the transfer of the thin layer comprises the bonding, onto the support, of a layer of silicon connected to a silicon substrate via a sacrificial layer, then the separation of the thin layer from the substrate by dissolution of the sacrificial layer.
Claim 20
Dependent Claim
70 words
Manufacturing process for a device according to claim 3 , comprising the formation of a first layer of oxide ( 12 ) buried in a block of silicon in such a way as to delimit a thin superficial layer of silicon ( 22 ) in the block, the thin superficial layer being intended to form the active region, and then covering the thin layer by a second layer of oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-05-26 | 2006-11-25 | 2007-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-05-26 | 2010-11-25 | 2011-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-05-26 | 2014-11-25 | 2015-05-27 | $7700.00 | Window Closed / Lapsed |